SPECIFICATION. Product Name : 4G/3G/2G Cellular Hinged SMA(M) Mount Monopole
|
|
|
- Andrea Wilkerson
- 5 years ago
- Views:
Transcription
1 SPECIFICATION Part No. : TG Product Name : 4G/3G/2G Cellular Hinged SMA(M) Mount Monopole Feature : 7MHz to 38MHz LTE*/GSM/CDMA/HSPA/UMTS 7*/85/9/17/18/19/21/23/35/37 Rotatable hinge design for optimal reception *LTE 7MHz Band Compatible only when connected directly on ground plane lengths of 6mm or more RoHS Compliant SPE /L/NW Page 1 of 37
2 1. Introduction The TG.9 Penta-band Cellular Hinged Rotatable SMA antenna is a high efficiency monopole antenna. Compared to other much larger antennas on the market, it has superior wide-band high efficiency characteristics. This antenna is used by many of the leading wireless device providers in the world marketplace. The unique rotatable hinge design enables the user to rotate the antenna to the best angle for an optimal cellular signal reception. As the upper antenna element can move in any direction, it also reduces damage from impact force from any angle to the antenna, compared to traditional hinged right angle or fixed fight angle designs or straight antennas. The tiny dimensions of this antenna coupled with excellent RF performance and an aesthetic high end design feel make it the ideal cellular antenna for routers, vehicle tracking devices, telematics devices, remote monitoring systems, and POS devices. The TG.9, as all monopole antennas works best connected directly to the ground-plane of the device main-board. Taoglas offers support services to characterize antenna efficiency on your individual device ground-plane. The TG.9 antenna also supports LTE 7MHz band applications when it is directly connected to ground-planes with lengths above 6mm. Please contact Taoglas regional support center first if you wish to do PTCRB or network approvals with this antenna attached to your device, so we can check RF integration is correct and do a pre-test first to ensure optimized passive and active performance and a smooth and quick certification approval process. This antenna also comes in a white version. TG.9.113W SPE /L/NW Page 2 of 37
3 2. Specification Communication System Frequency (MHz) Efficiency (free space)* Gain (dbi, free space)* Efficiency (mounted on PCB)* Gain (dbi, mounted on PCB)* Impedance Polarization Radiation Pattern Input Power Antenna Length Antenna Diameter Casing Connector Weight Temperature Range Storage Temperature Humidity 7 LTE 73~ 83 ELECTRICAL 4G/3G/2G Cellular AMPS GSM DCS PCS UMTS 824 ~ ~ ~ ~ ~ LTE 23~ LTE 249~ LTE 34~ LTE 36~ 38 18% 22% 22% 25% 3% 3% 17% 32% 28% 43% % 58% 57% 61% 58% 54% 31% 59% 36% 37% MECHANICAL ENVIRONMENTAL 5Ω Linear Omnidirectional 1W 72 ± 1.5 mm 1 ±.3 mm POM SMA Male (Brass) 8g -4 C to 85 C -4 ~ +85 Non-condensing 65 C 95% RH * Average efficiency and peak gain of antenna sitting 18 in Free Space and on 15*9mm ground plane at the side of the PCB. Please refer to section 3 for testing detail. SPE /L/NW Page 3 of 37
4 3. Antenna Characteristics 3.1 Test Setup The TG.9 was measured and tested in four different environments a. Free space b. On the edge of a 15*9mm ground plane - common size for IoT devices. TG.9 is mounted on the 9mm edge for testing. c. In the center of a 3*3mm ground plane simulate the effect of mounting in the center of a big ground plane. d. On the edge of a 3*3mm ground plane - simulates the effect of mounting TG.9 on top of a large gateway/router. Straight Position Free Space 15mm x 9mm Ground Plane 3mm x 3mm Ground Plane Edge 3mm x 3mm Ground Pane Center SPE /L/NW Page 4 of 37
5 Antenna in 9 Bend Position Free Space 15mm x 9mm Ground Plane 3mm x 3mm Ground Plane Edge 3mm x 3mm Ground Pane Center Z Y Z Y X X Chamber Setup SPE /L/NW Page 5 of 37
6 Return Loss [db] Return Loss [db] 3.2 Return Loss Free Space Straight Free Space Bend -3 15mm x 9mm Straight 15mm x 9mm Bend mm x 3mm Center Straight 3mm x 3mm Center Bend -3 3mm x 3mm Edge Straight 3mm x 3mm Edge Bend SPE /L/NW Page 6 of 37
7 VSWR VSWR 3.3 VSWR Free Space Straight Free Space Bend 15mm x 9mm Straight 15mm x 9mm Bend mm x 3mm Center Straight 3mm x 3mm Center Bend 3mm x 3mm Edge Straight 3mm x 3mm Edge Bend SPE /L/NW Page 7 of 37
8 Efficiency [%] Efficiency [%] 3.4 Efficiency Free Space Straight Free Space Bend 15mm x 9mm Straight 15mm x 9mm Bend mm x 3mm Center Straight 2 3mm x 3mm Center Bend 1 3mm x 3mm Edge Straight 3mm x 3mm Edge Bend SPE /L/NW Page 8 of 37
9 Gain [dbi] Gain [dbi] 3.5 Peak Gain Free Space Straight -6 Free Space Bend -7 15mm x 9mm Straight -8 15mm x 9mm Bend mm x 3mm Center Straight -3 3mm x 3mm Center Bend 3mm x 3mm Edge Straight -4 3mm x 3mm Edge Bend SPE /L/NW Page 9 of 37
10 Aver Gain [db] Aver Gain [db] 3.6 Average Gain Free Space Straight -1 Free Space Bend mm x 9mm Straight mm x 9mm Bend mm x 3mm Center Straight 3mm x 3mm Center Bend -9 3mm x 3mm Edge Straight -1 3mm x 3mm Edge Bend SPE /L/NW Page 1 of 37
11 4. Radiation Patterns 4.1 TG.9 in Free Space Straight SPE /L/NW Page 11 of 37
12 4.2 TG.9 in Free Space 9 SPE /L/NW Page 12 of 37
13 4.3 TG.9 on 15*9mm Ground Plane Straight SPE /L/NW Page 13 of 37
14 4.4 TG.9 on 15*9mm Ground Plane 9 SPE /L/NW Page 14 of 37
15 4.5 TG.9 on 3*3mm Ground Plane Center Straight SPE /L/NW Page 15 of 37
16 4.6 TG.9 on 3*3mm Ground Plane Center 9 SPE /L/NW Page 16 of 37
17 4.7 TG.9 on 3*3mm Ground Plane Edge Straight SPE /L/NW Page 17 of 37
18 4.8 TG.9 on 3*3mm Ground Plane Edge 9 SPE /L/NW Page 18 of 37
19 5. 3D Radiation Pattern 5.1 Free Space Straight 74MHz 751MHz 824MHz 96MHz 171MHz 188MHz 199MHz 217MHz 23MHz 25MHz 269MHz 34MHz 35MHz 36MHz SPE /L/NW Page 19 of 37
20 5.2 Free Space 9 74MHz 751MHz 824MHz 96MHz 171MHz 188MHz 199MHz 23MHz 25MHz 269MHz 34MHz 35MHz 36MHz SPE /L/NW Page 2 of 37
21 5.3 15*9mm Ground Plane Straight 74MHz 751MHz 824MHz 96MHz 171MHz 188MHz 199MHz 217MHz 23MHz 25MHz 269MHz 23MHz 25MHz 269MHz SPE /L/NW Page 21 of 37
22 5.4 15*9mm Ground Plane 9 74MHz 751MHz 824MHz 96MHz 171MHz 188MHz 199MHz 217MHz 23MHz 25MHz 269MHz 34MHz 35MHz 36MHz SPE /L/NW Page 22 of 37
23 5.5 3*3mm Ground Plane Center Straight 74MHz 751MHz 824MHz 96MHz 171MHz 188MHz 199MHz 217MHz 23MHz 25MHz 269MHz 34MHz 35MHz 36MHz SPE /L/NW Page 23 of 37
24 5.6 3*3mm Ground Plane Center 9 74MHz 751MHz 824MHz 96MHz 171MHz 188MHz 199MHz 217MHz 23MHz 25MHz 269MHz 34MHz 35MHz 36MHz SPE /L/NW Page 24 of 37
25 5.7 3*3mm Ground Plane Edge Straight 74MHz 751MHz 824MHz 96MHz 171MHz 188MHz 199MHz 217MHz 23MHz 25MHz 269MHz 34MHz 35MHz 36MHz SPE /L/NW Page 25 of 37
26 5.8 3*3mm Ground Plane Edge 9 74MHz 751MHz 824MHz 96MHz 171MHz 188MHz 199MHz 217MHz 23MHz 25MHz 269MHz 34MHz 35MHz 36MHz SPE /L/NW Page 26 of 37
27 6. Mechanical Drawing (unit: mm) 1 Housing POM Black 2 Hinge Brass Ni Plated 3 Cap POM Black 4 Connector SMA Male (Brass) SPE /L/NW Page 27 of 37
28 7. Installation SPE /L/NW Page 28 of 37
29 8. Minimum Ground Plane for LTE Efficiency Different Ground Plane lengths were considered for acceptable efficiency for LTE bands. Three different ground planes were chosen. They were all 3mm wide and the lengths were varied beginning at 9mm then 7mm and finally 6mm 9*3mm 7*3mm 6*3mm It was also considered whether the TG.9 antenna was positioned straight or at an angle of 9. The antenna was positioned on the edge of the Ground Plane for all tests. SPE /L/NW Page 29 of 37
30 Parameter Straight Pose Band 7 LTE GSM DCS PCS UMTS/ HSPA 23 LTE 27 LTE 35 LTE 37LTE Frequency (MHz) 73~ ~ ~ ~ ~ ~ ~269 34~ 36 36~ 38 Average Gain (dbi) Efficiency (%) 9mm x 72% 49% 48% 64% 59% 31% 63% 42% 54% 3mm Peak Gain (dbi) Ground Return Loss (db) Average Gain (dbi) Efficiency (%) 7mm x 53% 54% 45% 6% 67% 28% 7% 42% 62% 3mm Peak Gain (dbi) Ground Return Loss (db) Average Gain (dbi) Efficiency (%) 6mm x 41% 5% 51% 58% 69% 2% 72% 37% 49% 3mm Peak Gain (dbi) Ground Return Loss (db) Bend Pose Average Gain (dbi) Efficiency (%) 9mm x 68% 58% 45% 61% 61% 3% 61% 47% 54% Peak Gain (dbi) 3mm Ground Return Loss (db) Average Gain (dbi) Efficiency (%) 7mm x 39% 59% 42% 56% 67% 35% 7% 46% 62% Peak Gain (dbi) 3mm Ground Return Loss (db) Average Gain (dbi) Efficiency (%) 6mm x 28% 5% 47% 54% 68% 26% 73% 41% 49% Peak Gain (dbi) 3mm Ground Return Loss (db) SPE /L/NW Page 3 of 37
31 Return Loss [db] Return Loss [db] 8.1 Return Loss mm x 3mm Straight 7mm x 3mm Straight 6mm x 3mm Straight mm x 3mm Bend -4 7mm x 3mm Bend -45 6mm x 3mm Bend SPE /L/NW Page 31 of 37
32 VSWR VSWR 8.2 VSWR mm x 3mm Straight 7mm x 3mm Straight 6mm x 3mm Straight mm x 3mm Bend 7mm x 3mm Bend 6mm x 3mm Bend SPE /L/NW Page 32 of 37
33 Gain [dbi] Efficiency [%] 8.3 Efficiency for Straight Antenna mm x 3mm Straight 2 7mm x 3mm Straight 1 6mm x 3mm Straight Peak Gain for Straight Antenna mm x 3mm Straight -2 7mm x 3mm Straight -3 6mm x 3mm Straight SPE /L/NW Page 33 of 37
34 Efficiency [%] Aver Gain [db] 8.5 Average Gain for Straight Antenna mm x 3mm Straight -8 7mm x 3mm Straight 6mm x 3mm Straight Efficiency for 9 Bend mm x 3mm Bend 2 7mm x 3mm Bend 1 6mm x 3mm Bend SPE /L/NW Page 34 of 37
35 Aver Gain [db] Gain [dbi] 8.7 Peak Gain for 9 Bend mm x 3mm Bend -4 7mm x 3mm Bend -5 6mm x 3mm Bend Average Gain for 9 Bend mm x 3mm Bend -8 7mm x 3mm Bend -9 6mm x 3mm Bend SPE /L/NW Page 35 of 37
36 9. Packaging SPE /L/NW Page 36 of 37
37 Taoglas makes no warranties based on the accuracy or completeness of the contents of this document and reserves the right to make changes to specifications and product descriptions at any time without notice. Taoglas reserves all rights to this document and the information contained herein. Reproduction, use or disclosure to third parties without express permission is strictly prohibited. Copyright Taoglas Ltd. SPE /L/NW Page 37 of 37
SPECIFICATION. : 2 x 4G/3G/2G MIMO Antenna (698~960MHz, 1710~2170MHz,2300~2700MHz, MHz) MIMO1 antenna MIMO2 antenna
SPECIFICATION Part No. Product Name Feature : MA761.B.BICG.003 : Pantheon Antenna 4in1 MA761 Screw-Mount [Permanent Mount] 4G/3G/2G MIMO/ 2.4/5GHz MIMO : 2 x 4G/3G/2G MIMO Antenna (698~960MHz, 1710~2170MHz,2300~2700MHz,
SPECIFICATION. Product Name : Dual-Band WiFi 2.4~2.5GHz/5.15~5.85GHz Terminal Mount Monopole Antenna
SPECIFICATION Part No. : GW.05.0153 Product Name : Dual-Band WiFi 2.4~2.5GHz/5.15~5.85GHz Terminal Mount Monopole Antenna Features : High Efficiency with and without groundplane WiFi/Bluetooth/igbee Extremely
2J9547a CELLULAR/LTE MIMO and 2.4/5.0 GHz ISM MIMO Mast Mount
Product Datasheet 2J9547a CELLULAR/LTE MIMO and 2.4/5. GHz ISM MIMO Mast Mount Key Features Cable 1 and 2: CELLULAR / LTE - 698-96 MHz - 171-217 MHz - 25-27 MHz Cable 3 and 4: 2.4/5. GHz ISM - 241-249
2J7068BGa-915 CELLULAR/LTE MIMO, 2.4/5.0 GHz ISM, 915 MHz ISM and GNSS
Product Datasheet 2J768BGa-915 CELLULAR/LTE MIMO, 2.4/5. GHz ISM, 915 MHz ISM and GNSS Key Features Cable 1 and 2: CELLULAR / LTE Cable 3: 2.4/5. GHz ISM Cable 4: 915 MHz ISM Cable 5: GPS/GLONASS/QZSS/Galileo
2J4A50PCFa 2 4G LTE/3G/2G MIMO, 2 2.4/5.0 GHz ISM MIMO and GNSS Adhesive Mount
Product Datasheet 2J4A5PCFa 2 4G LTE/3G/2G MIMO, 2 2.4/5. GHz ISM MIMO and GNSS Adhesive Mount Key Features Cable 1 and 2: 4G LTE/3G/2G - 698-96 MHz - 171-217 MHz - 25-27 MHz Cable 3 and 4: 2.4/5. GHz
DATASHEET AMOTECH. Application
Document Datasheet Type Chip Antenna Application ISM 868/915MHz Part No. AMAN9001ST05 Revision 4.0 DATASHEET Application ISM 868/915 MHz Features Monopole Structure Size (9.0*.0*1.mm ) Performance Optimizing
MIMO LTE+MIMO Dual Band GHz+GNSS
Tracking Solutions Embedded Antenna design GPS&Wireless solutions Provider MIMO Combo Antenna MODEL: AW-10 V1.0 2013-11-29 MIMO LTE+MIMO Dual Band 2.4-5.0GHz+GNSS Overview: The AW-10 is the multi-band
MA-203 Stingray GPS/Cellular Glassmount Covert Antenna
MA-23 Stingray GPS/Cellular Glassmount Covert Antenna 3D view top view (this side faces the sky) underside view (this side faces the passenger) This is a combination high performance GPS and Quad-band
2.4 GHz. Description. Order Number. Specification. Value. Gain Impedance Type Polarization VSWR Frequency Weight Size Antenna Color
2.4 GHz 2.5 GHz Dipole 2dBi Antenna for Reverse Polarity SMA ORDERING INFORMATION Order Number Description SPECIFICATIONS 1-11 2.4 GHz dipole antenna for reverse polarity SMA connector. Specification Gain
(loss < 1 db) (loss 3 db) (loss > 20 db) (loss > 40 db) typical frequency response DC (db) x σ RETURN LOSS. at RF level of 0 dbm
Coaxial Low Pass Filter 5Ω Maximum Ratings DC to 7 MHz Operating Temperature -55 C to 1 C Storage Temperature -55 C to 1 C RF Power Input.5W max. Permanent damage may occur if any of these limits are exceeded.
RDP-272+ DC to 2700 MHz (DC-950, MHz) The Big Deal Low insertion loss High isolation Miniature shielded package.
Surface Mount Diplexer 5Ω DC to 27 MHz (DC-95, 17-27 MHz) The Big Deal Low insertion loss High isolation Miniature shielded package CASE STYLE: CK65 Product Overview is a low-pass + high-pass combination
Insertion loss (db) TOP VIEW SIDE VIEW BOTTOM VIEW. 4x ± ± Orientation Marker Denotes Pin Location 4x 0.
Model DC4759J52AHF Ultra Low Profile 85 2dB Directional Coupler Description The DC4759J52AHF is a low cost, low profile sub-miniature high performance 2 db directional coupler in an easy to use RoH compliant,
http://www.tekfun.com.tw/icm.php - Introduction - Tekfun Co., Ltd. has been manufacturing and exporting various Antennas and RF products since 1990. Taking advantage of our own professional Antenna Chamber,
Multilayer Band Pass Filters
Multilayer Band Pass Filters For 5.GHz W-LAN DEA Series Type: DEA25425BT-29B2 (2..25.9mm) DEA25437BT-2 (2..25.9mm) DEA25375BT-254A (2..25.95mm) DEA25425BT-228A4 (2..25.95mm) Issue date: November 2 Conformity
Broadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX, SATELLITE IF
Flat Gain, High IP3 Monolithic Amplifier 50Ω 0.01 to 6 GHz The Big Deal Ceramic, Hermetically Sealed, Nitrogen filled Low profile case,.045 high Ultra Flat Gain Broadband High Dynamic Range without external
3M Pin Strip Header.100 and Straight and Right Angle, Solder Tail 2300 Series
and Straight and Right Angle, Solder Tail 2300 Series One and two row versions Straight and right angle versions Tin lead or gold plating available Tapered tip does not cut the socket wipe during insertion,
DISCRETE SEMICONDUCTORS DATA SHEET
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGY687 600 MHz, 21.5 db gain push-pull amplifier Supersedes data of 1995 Sep 11 2001 Nov 08 FEATURES Excellent linearity Extremely low noise Silicon
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM07U7X
RFMUX TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFMUX VHF- and UHF-band Amplifier Applications (Note)The TOSHIBA products listed in this document are intended for high frequency Power
SAW FILTER FOR RKE Murata part number :SAFBC315MSP0T00
AUTOMOTIVE SAW FILTER FOR RKE Package Dimensions Top View Specification Item Nominal Center Frequency(fc) Specification -4 to +125 C typ. 315. MHz Dot Marking(φ.5) Bottom View (.1) 3.±.2 Q N (3) (4) (1).75±.2
Multilayer Band Pass Filters
Multilayer Band Pass Filters For.GHz W-LAN/Bluetooth DEA Series Type: DEABT-6A (...mm) DEABT-6A (...7mm max.) DEABT-B (...8mm max.) DEABT-C (...9mm) DEABT-7A (...9mm) DEABT-8A (...9mm) DEABT-8A (...mm
BLF7G20L-160P; BLF7G20LS-160P
BLF7G20L-160P; BLF7G20LS-160P Rev. 01 22 June 2010 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz
TOSHIBA Transistor Silicon NPN Epitaxial Type TMBT3904
TOSHIBA Transistor Silicon NPN Epitaxial Type TMBT3904 Audio Frequency General Purpose Amplifier Applications High voltage and high current : VCEO = 50 V, IC = 150 ma (max) Complementary to TMBT3906 Absolute
Monolithic Amplifier CMA-84+ Wideband, High Dynamic Range, Ceramic. DC to 7 GHz. The Big Deal
Wideband, High Dynamic Range, Ceramic Monolithic Amplifier Ω DC to 7 GHz The Big Deal Ceramic, hermetically sealed, nitrogen filled Low profile case,.4 High IP3, +38 dbm High Gain, 24 db High POUT, +21
QML35. Cover. Voltage A = 5V (+/- 5%) B = 3.3V (+/- 5%)
QML35 DESIGN FEATURES Bearingless modular design Low profile assembled height Resolutions up to 8192 lines per revolution 4, 6, 8 or 10 pole commutation Easy lock-n-twist assembly feature Through shaft
Monolithic Amplifier CMA-162LN+ Ultra Low Noise, High IP to 1.6 GHz
Ultra Low Noise, High IP3 Monolithic Amplifier 50Ω 0.7 to 1.6 GHz The Big Deal Ceramic, Hermetically Sealed, Nitrogen filled Low profile case,.045 high Ultra Low Noise Figure, 0.5 db High Gain, High IP3
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2712
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2712 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: V CEO = 50 V, I C = 150 ma (max) Excellent
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086. Characteristics Symbol Test Condition Min Typ. Max Unit
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, S 21e 2 = 11dB (f = 1 GHz) Absolute Maximum
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5066. Characteristics Symbol Test Condition Min Typ. Max Unit
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5066 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, S 21e 2 = 12dB (f = 1 GHz) Absolute Maximum
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T a = 25 ) Symbol. Note. V RM V R I O I FSM T j T stg.
Schottky Barrier Diode CCS15S30 Silicon Epitaxial CCS15S30 1. Applications High-Speed Switching 2. Features (1) Low forward voltage: V F (1) = 0.33 V (typ.) 3. Packaging and Internal Circuit 1: Cathode
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T a = 25 ) Symbol. Note. V RM V R I FM I O P D I FSM T j T stg
Switching Diodes 1SS302A Silicon Epitaxial Planar 1SS302A 1. Applications Ultra-High-Speed Switching 2. Features (1) Fast reverse recovery time : t rr = 1.6 ns (typ.) (2) AEC-Q101 qualified 3. Packaging
Designing with an Inverted-F PCB Antenna
Page 1 Application Note 5052 24 April 2008 Designing with an Inverted-F PCB Antenna For the EM250 and EM2 Platforms This document describes an Inverted-F PCB antenna designed by Ember for use with both
QM35. Cover. Output. A = Line Driver B = Line Driver (ABZ) /Open Collector (UVW) C = Dual Votage Line Driver (ABZ)/ Open Collector (UVW)
QM35 DESIGN FEATURES Bearingless modular design Low profile assembled height Resolutions up to 8192 lines per revolution 4, 6, 8 or 10 pole commutation Easy lock-n-twist assembly feature Through shaft
Radio Propagation Modelling
Radio Propagation Modelling Ian Wassell and Yan Wu University of Cambridge Computer Laboratory Why is it needed? To predict coverage between nodes in a wireless network Path loss is different from environment
SERIES 2000 STICK ANTENNA
Not Recommended for New designs RI-ANT-S01C, RI-ANT-S02C SERIES 2000 STICK ANTENNA SCBS851 DECEMBER 2002 REVISED DECEMBER 2005 FEATURES Best in Class Performance Through Patented HDX Technology IP 64+
Monolithic Amplifier CMA-83LN+ Low Noise, Wideband, High IP3. 50Ω 0.5 to 8.0 GHz
Low Noise, Wideband, High IP3 Monolithic Amplifier 50Ω 0.5 to 8.0 GHz The Big Deal Ceramic, hermetically sealed, nitrogen filled Low profile case, 0.045 Flat gain over wideband Low noise figure, 1.3 db
Configurations: Dimension (mm) IMCG ± ± ± ± IMCG ± ± ± ±
Chip s Multilayer Chip s For General Configurations: FEATURES To prevent EMI interference noises between. High Q and high reliability and ferrite material. Bead inductor for power energy storage or noise
3M Pak 50 Low Profile Plug.050" Plug, (1.27) Straight, Right Angle and SMT, Low Profile P50LE Series
M Pak 50 Low Profile Plug Latch/eject mechanism maintains a secure connection Low profile 11.8 mm mated height when using the surfacemount version Mates to the P25LE wiremount socket RoHS Compliant. See
Propagation Path Loss Measurements for Wireless Sensor Networks in Sand and Dust Storms
Frontiers in Sensors (FS) Volume 4, 2016 doi: 10.14355/fs.2016.04.004 www.seipub.org/fs Propagation Path Loss Measurements for Wireless Sensor Networks in Sand and Dust Storms Hana Mujlid*, Ivica Kostanic
Features rugged welded case, hermetic other standard and custom PLP models available with wide selection of fco
Plug-In Low Pass Filter 5Ω Maximum Ratings DC to 15 MHz Operating Temperature -55 C to 1 C Storage Temperature -55 C to 1 C RF Power Input.5W max. Permanent damage may occur if any of these limits are
Features rugged welded case, hermetic other standard and custom PLP models available with wide selection of fco
Plug-In Low Pass Filter 5Ω Maximum Ratings DC to 1 MHz Operating Temperature -55 C to 1 C Storage Temperature -55 C to 1 C RF Power Input.5W max. Permanent damage may occur if any of these limits are exceeded.
Case Material: Molded Plastic. UL Flammability Classification Low Reverse Leakage Current
Pb 4A GLASS PASSIVATED BRIDGE RECTIFIER Features Mechanical Data Glass Passivated Die Construction Case: Rating to 1,000V PRV Case Material: Molded Plastic. UL Flammability Classification Low Reverse Leakage
EELE 5414 Wireless Communications. Chapter 4: Mobile Radio Propagation: Large-Scale Path Loss
EELE 5414 Wireless Communications Chapter 4: Mobile Radio Propagation: Large-Scale Path Loss In the last lecture Outline Diffraction. Scattering. Practical link budget design. Log-distance model Log-normal
DISCONTINUED. 3M PC Card Header Single Slot, Low Profile, No Ejector, Standard Footprint. Physical. Electrical. Environmental. UL File No.
PC Card Header Meets PCMCIA specifications Tapered header pins provide easy insertion High temperature plastic insulator Stand-off height options ESD clips and plastic pegs for secure hold-down See Regulatory
Coverage Planning for LTE system Case Study
Coverage Planning for LTE system Case Study Amer M. Daeri 1, Amer R. Zerek 2 and Mohammed M. Efeturi 3 1 Zawia University. Faculty of Engineering, Computer Engineering Department Zawia Libya Email: amer.daeri@
VHF variable capacitance diode
Rev. 4 6 September 2011 Product data sheet 1. Product profile 1.1 General description The is a variable capacitance diode, fabricated in planar technology and encapsulated in the SOD323 (SC-76) very small
Evaluation Board User Guide UG-129
Evaluation Board User Guide UG-129 One Technology Way P.O. Box 9106 Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 Fax: 781.461.3113 www.analog.com Universal Evaluation Board for Dual High Speed Op Amps
Recommended Land Pattern: [mm]
![Recommended Land Pattern: [mm]](/thumbs/73/68316164.jpg "Recommended Land Pattern: [mm]")
Dimensions: [mm] Recommended Land Pattern: [mm] Electrical Properties: Properties Test conditions Value Unit Tol. 3 Inductance 10 khz/ 0.1 ma L. mh ±30% 1 4 Rated Current @ 70 C I R.75 A max. DC Resistance
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK330
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications Unit: mm High breakdown voltage: V GDS = 50 V High
50 V, 3 A PNP low VCEsat (BISS) transistor
Rev. 6 28 June 2011 Product data sheet 1. Product profile 1.1 General description PNP low V CEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK mw
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications Unit: mm Two devices in a ultra super mini (five pins) package High Y fs : Y fs = 15 ms (typ.)
3M Serial Advanced Technology Attachment (SATA) Connector Host Receptacle, Vertical and Right Angle, Std Height, Surface Mount Receptacle 5622 Series
M Serial Advanced Technology Attachment (SATA) Connector 22-position signal and power combination Input/ouput connector for backplane applications EMLB contacts for "hot swap" Blind mate polarization for
Optimizing the Existing Indoor Propagation Prediction Models
2012 International Conference on Wireless Networks (ICWN 2012) IPCSIT vol. 49 (2012) (2012) IACSIT Press, Singapore DOI: 10.7763/IPCSIT.2012.V49.37 Optimizing the Existing Indoor Propagation Prediction
MH Series High Current Chip Ferrite Beads
*ohs COMPLIANT & **HALOGEN FEE Features High resistance to heat and humidity esistance to mechanical shock and pressure Accurate dimensions for automatic surface mounting Wide impedance range ohs compliant*
3M Polarized Boardmount Socket.100".100" Centerbump Polarization with Straight Solder Tails 8500 Series
3M Polarized Boardmount Socket.100".100" Centerbump Polarization with Straight Solder Tails 8500 Series Centerbump polarization Mates with low profile shrouded headers Part number on each piece Optional
RN1441, RN1442, RN1443, RN1444
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1441 RN1444 RN1441, RN1442, RN1443, RN1444 Muting and Switching Applications Unit: mm High emitter-base voltage: V EBO = 25V (min) High reverse
Statistical Analysis of On-body Radio Propagation Channel for Body-centric Wireless Communications
374 PIERS Proceedings, Stockholm, Sweden, Aug. 12 15, 2013 Statistical Analysis of On-body Radio Propagation Channel for Body-centric Wireless Communications H. A. Rahim 1, F. Malek 1, N. Hisham 1, and
APPLICATION FORM: Authorization for the installing, maintaining and operating of a VSAT network. REVENUE STAMP OF NAF. 10
Authorization for the installing, maintaining and operating of a VSAT network. REVENUE STAMP OF NAF. 10 1 GENERAL INFORMATION The application for the authorization for installing, maintaining and operating
July Multilayer Diplexer. For MHz / MHz DPX202700DT-4062A1. 2.0x1.25mm [EIA 0805]* * Dimensions Code JIS[EIA]
![July Multilayer Diplexer. For MHz / MHz DPX202700DT-4062A1. 2.0x1.25mm [EIA 0805]* * Dimensions Code JIS[EIA]](/thumbs/82/86752617.jpg "July Multilayer Diplexer. For MHz / MHz DPX202700DT-4062A1. 2.0x1.25mm [EIA 0805]* * Dimensions Code JIS[EIA]")
R F C o m p o n e n t s July 15 Multilayer Diplexer For 698-96MHz / 17-27MHz DPX27DT-462A1 2.x1.25mm [EIA 85]* * Dimensions Code JIS[EIA] Multilayer Diplexer For 698-96MHz / 17-27MHz Conformity to RoHS
August Multilayer Diplexer. For MHz / MHz DPX165950DT-8144A1. 1.6x0.8mm [EIA 0603]* * Dimensions Code JIS[EIA]
![August Multilayer Diplexer. For MHz / MHz DPX165950DT-8144A1. 1.6x0.8mm [EIA 0603]* * Dimensions Code JIS[EIA]](/thumbs/93/111951709.jpg "August Multilayer Diplexer. For MHz / MHz DPX165950DT-8144A1. 1.6x0.8mm [EIA 0603]* * Dimensions Code JIS[EIA]")
R F C o m p o n e n t s August 15 Multilayer Diplexer For 74-161MHz / -59MHz DPX1659DT-8144A1 1.6x.8mm [EIA 63]* * Dimensions Code JIS[EIA] Multilayer Diplexer For 74-161MHz / -59MHz Conformity to RoHS
SYMBOL TYPE NUMBER VALUE UNIT. Power dissipation at Tamb = 60 ºC 1.5 W. Non repetitive peak zener dissipation (t = 10ms) 40 W
DO-204AL (DO-41) Voltage Power Dissipation 10 to 200 V 1.5 W Maximum Ratings and Electrical Characteristics at 25 C FEATURE Glass passivated chip junction Hiperectifier structure for high reliability Cavity-free
July Multilayer Diplexer. For MHz / MHz DPX162170DT-8122B1. 1.6x0.8mm [EIA 0603]* * Dimensions Code JIS[EIA]
![July Multilayer Diplexer. For MHz / MHz DPX162170DT-8122B1. 1.6x0.8mm [EIA 0603]* * Dimensions Code JIS[EIA]](/thumbs/73/69324547.jpg "July Multilayer Diplexer. For MHz / MHz DPX162170DT-8122B1. 1.6x0.8mm [EIA 0603]* * Dimensions Code JIS[EIA]")
R F C o m p o n e n t s July 15 Multilayer Diplexer For 824-96MHz / 17-217MHz DPX16217DT-8122B1 1.6x.8mm [EIA 63]* * Dimensions Code JIS[EIA] Multilayer Diplexer For 824-96MHz / 17-217MHz Conformity to
October Multilayer Diplexer. For MHz / MHz DPX165950DT-8030D1. 1.6x0.8mm [EIA 0603]* * Dimensions Code JIS[EIA]
![October Multilayer Diplexer. For MHz / MHz DPX165950DT-8030D1. 1.6x0.8mm [EIA 0603]* * Dimensions Code JIS[EIA]](/thumbs/82/85702705.jpg "October Multilayer Diplexer. For MHz / MHz DPX165950DT-8030D1. 1.6x0.8mm [EIA 0603]* * Dimensions Code JIS[EIA]")
R F C o m p o n e n t s October 15 Multilayer Diplexer For 791-269MHz / 49-595MHz DPX16595DT-83D1 1.6x.8mm [EIA 63]* * Dimensions Code JIS[EIA] Multilayer Diplexer For 791-269MHz / 49-595MHz Conformity
RN1441,RN1442,RN1443,RN1444
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1441,RN1442,RN1443,RN1444 Muting and Switching Applications Unit in mm High emitter-base voltage: V EBO = 25V (min) High reverse h FE : reverse
3M Round Conductor Flat Cable.050" 28 AWG Stranded, FEP 3601 Series
M Round Conductor Flat Cable.050" 28 AWG Stranded, FEP 601 Series FEP insulation is compatible with most insulation displacement connectors.050 inch pitch parallel conductors for mass termination Low dielectric
IEEE g (54Mbps) mini PCI Wireless LAN Module
XG-603 mpci WLAN Module IEEE 802.11g (54Mbps) mini PCI Wireless LAN Module Z comax Technologies, Inc. has released its new line of Air Runner wireless LAN mini-pci cards. The XG-603 is an IEEE 802.11g
AN021: RF MODULES RANGE CALCULATIONS AND TEST
AN021: RF MODULES RANGE CALCULATIONS AND TEST We Make Embedded Wireless Easy to Use RF Modules Range Calculation and Test By T.A.Lunder and P.M.Evjen Keywords Definition of Link Budget, Link Margin, Antenna
BAT54 series 1. Product profile 2. Pinning information Schottky barrier diodes 1.1 General description 1.2 Features and benefits
SOT2 Rev. 5 5 October 2012 1. Product profile 1.1 General description Planar with an integrated guard ring for stress protection, encapsulated in a small SOT2 (TO-26AB) Surface-Mounted Device (SMD) plastic
Physical. Electrical. Environmental. Insulation: Contact: Plating: Temperature Rating: -55 C to +85 C
3M I/O Interconnect System 2.0 mm for IEEE 1394 Wiremount Receptacle (Female) 3E206 Series Designed to mate to all 3M I/O Interconnect System 2.0 mm for IEEE 1394 Boardmount Plugs Polarized to provide
Project: IEEE P Working Group for Wireless Personal Area Networks (WPANs)
Project: IEEE P802.15 Working Group for Wireless Personal Area Networks (WPANs) Title: Channel Model for Intra-Device Communications Date Submitted: 15 January 2016 Source: Alexander Fricke, Thomas Kürner,
RN1114, RN1115, RN1116, RN1117, RN1118
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN4~RN8 RN4, RN5, RN6, RN7, RN8 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm With built-in bias resistors.
RN1401, RN1402, RN1403 RN1404, RN1405, RN1406
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process),,,, ~ Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm With built-in bias resistors Simplified circuit
FS8G - FS8M. 8 A Standard Recovery Surface Mount Rectifiers
8G - 8M 8 A tandard Recovery urface Mount Rectifiers Description The 8G to 8M series offers breakthrough size and performance. It sinks 8 A DC forward current and provides up to 20 A surge current capability
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1910, RN1911
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1910, RN1911 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Including
SOT-23 Single Op Amp Evaluation Board User Guide UG-838
SOT-23 Single Op Amp Evaluation Board User Guide One Technology Way P.O. Box 9106 Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 Fax: 781.461.3113 www.analog.com Evaluation Board for Single, High Speed
Mysteries of DRA Modes Unresolved Issues for the Future
Mysteries of DRA Modes Unresolved Issues for the Future Debatosh Guha Institute of Radio Physics and Electronics, University of Calcutta, India University College of Science and Technology 1914-214 1 On
3M Mini Serial Attached SCSI (minisas) Connector Assembly Internal Right Angle Combo Connector
M Mini Serial Attached SCSI (minisas) Connector Assembly 8AB6 Series Capable of 6 Gbps per channel data rate Combination receptacle/shell assembly to facilitate board assembly Available with pre-positioning
RN1421, RN1422, RN1423, RN1424 RN1425, RN1426, RN1427
RN1421 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1421, RN1422, RN1423, RN1424 RN1425, RN1426, Switching, Inverter Circuit, Interface Circuit and
SC-70 Evaluation Board User Guide UG-112
SC-70 Evaluation Board User Guide UG-112 One Technology Way P.O. Box 9106 Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 Fax: 781.461.3113 www.analog.com Evaluation Board for Single, High Speed Op Amps
PACKAGE OPTION ADDENDUM www.ti.com 25-May-2018 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan UC2638DW NRND SOIC DW 20 25 Green (RoHS UC2638DWG4
PACKAGE OPTION ADDENDUM www.ti.com 17-Mar-2017 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan UC2906DW NRND SOIC DW 16 40 Green (RoHS UC2906DWG4
To request a full data sheet, please send an to:
To request a full data sheet, please send an email to: display_contact@list.ti.com. PACKAGE OPTION ADDENDUM 11-Apr-2013 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins
3M Mini D Ribbon (MDR) Connectors.050 Boardmount Through-Hole Rt. Angle Receptacle Shielded, SCSI-2 Layout 102 Series
Wiper-on-wiper contact for reliable repetitive plugging Rugged die cast metal case construction Ground lock for reliable PCB retention Interface latch design for connection stability 68 contacts Reverse
THERMOPILE DETECTORS FOR MEASUREMENT. TPD 1T 0224, TPD 1T 0524, TPD 1T 0624 General-Purpose Thermopile
THERMOPILE DETECTORS FOR MEASUREMENT THERMOPILE DETECTORS FOR MEASUREMENT TPD 1T 0224, TPD 1T 0524, TPD 1T 0624 General-Purpose Thermopile Applications This is our general-purpose range of thermopile detectors
PACKAGE OPTION ADDENDUM
PACKAGE OPTION ADDENDUM www.ti.com 15-Apr-2017 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish (6) MSL Peak Temp (3) Op Temp
3M HDC Header.100 Vertical Mount, PCB/Backplane, Solder Tail or Press-Fit HDC Series
M HDC Header High density, up to 240 contacts single bay and 66 contacts dual bay Early Mate Late Break (EMLB) grounding contacts for hot swapping Mates with three-row and four-row sockets See Regulatory
LTE RF Planning Training LTE RF Planning, Design, Optimization Training
LTE RF Planning Training LTE RF Planning, Design, Optimization Training Why should you choose LTE RF Planning Training? LTE RF Planning Training is focused on carrying out RF planning and Design and capacity
Is Now Part of. To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON emiconductor, please visit our website at www.onsemi.com Please note: As part of the airchild emiconductor integration, some of the airchild orderable part numbers
3M Serial Advanced Technology Attachment (SATA) Connector
M Serial Advanced Technology Attachment (SATA) Connector 22-position signal and power combination Input/ouput connector for backplane applications EMLB contacts for "hot swap" Blind mate polarization for
VAC, 50/60 Hz. -25 C to 65 C. Bluetooth Low Energy dBm. +5dBm. 1Mbit/s (2Mbit/s) 128 bit AES b/g/n
SPECIFICATION SHEET BLUFI VER 1.3 HARDWARE SPECIFICATION AC Input AC Plugs 100-240 VAC, 50/60 Hz US type: NEMA 1-15 ungrounded (Type A) European: CEE 7/16 "Europlug" (Type C) British Standard BS 1363 (Type
PACKAGE OPTION ADDENDUM www.ti.com 22-Jun-2018 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish (6) MSL Peak Temp (3) Op Temp
Type FCA Acrylic Surface Mount Film Capacitors
Acrylic Stacked Metallized Film Capacitors for Filtering and Noise Attenuation Type FCA acrylic flm chips are non-inductive stacked metallized film capacitors which feature large capacitance values in
Watts/ft side 5.0. L: Left R: Right. .30 Light Source. (L)eft FEATURES .25
QCAPD QTran introduces the first encapsulated linear LED fixture designed and manufactured in the USA. The QCAPD is a flexible, IP LED Fixture that maximizes lumens and is aesthetically pleasing. The flexible
For a detailed datasheet and other design support tools, please contact
This device is designed specifically to power Intel processors under a strict disclosure agreement with Intel Corporation. The end user must have a current CNDA in place with Intel Corporation to access
TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941
TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit: mm High breakdown voltage: V CEO = 14 V (min) Complementary to 2SC5198 Recommended for 7-W high-fidelity audio
Watts/ft side 5.0. L: Left R: Right. (L)eft .25. Interior Applications Q6M-DC+CAP QTM-DC+CAP QTM-eLED QTM-eLED(L) QTM-eLED(E) iq-ph
QCAPD QTran introduces the first encapsulated linear LED fixture designed and manufactured in the USA. The QCAPD is a flexible, IP LED Fixture that maximizes lumens and is aesthetically pleasing. The flexible
K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET. Drop-In Replacement: CE3520K3. Part Number Order Number Package Quantity Marking Supplying Form
FEATURES Super low noise figure and high associated gain HETERO JUNCTION FIELD EFFECT TRANSISTOR K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NF = 0.75 db TYP., Ga = 10 db TYP. @ f = 20 GHz Micro-X
PACKAGE OPTION ADDENDUM
PACKAGE OPTION ADDENDUM www.ti.com 15-Apr-2017 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan SN74LS19ADR ACTIVE SOIC D 14 2500 Green (RoHS & no
DCR DCR. Irms (A) Isat (A) Typ. Max. Recommended Layout NATURAL COOLING
*RoHS COMPLIANT & AEC APPROVED R7 Features Shielded construction Carbonyl powder core High saturation current Low profile - 1. mm Inductance range:. to µh AEC-Q qualified RoHS compliant* and halogen free**
V RM = 600 V, I F(AV) = 0.5 A, t rr = 100 ns Fast Recovery Diode. Description. Package. Features. Applications
V RM = 600 V, I F(AV) = 0.5 A, t rr = 100 ns Fast Recovery Diode Data Sheet Description The is a fast recovery diode of 600 V / 0.5 A. The maximum t rr of 100 ns is realized by optimizing a life-time control.
ECE 5325/6325: Wireless Communication Systems Lecture Notes, Spring 2013
ECE 5325/6325: Wireless Communication Systems Lecture Notes, Spring 2013 Lecture 5 Today: (1) Path Loss Models (revisited), (2) Link Budgeting Reading Today: Haykin/Moher handout (2.9-2.10) (on Canvas),