FS8G - FS8M. 8 A Standard Recovery Surface Mount Rectifiers
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1 8G - 8M 8 A tandard Recovery urface Mount Rectifiers Description The 8G to 8M series offers breakthrough size and performance. It sinks 8 A DC forward current and provides up to 20 A surge current capability with only 0.7 A reverse leakage current. All this capability is packed into a small, flat lead, TO 277 package, optimized for space constrained applications. eatures Very High forward urge Capability: I M = 20 A Low Leakage Current: 0.7 A at T A = 25 C Very Low Profile: Typical Height of. mm Glass Passivated Junction HBM (JEDEC A4) > 8 KV; CDM (JEDEC C0C) > 2 KV Green Molding Compound as per IEC6249 tandard These Devices are Pb ree, Halogen ree ree and are RoH Compliant Applications General Purpose Applications Reverse Polarity Protection Rectifications Cathode 2 Rectifier TO 277 CAE 40BQ MARKING DIAGRAM $Y&Z& * Anode Anode 2 $Y = ON emiconductor Logo &Z = Assembly Plant Code & = Data Code (Year & Week) * = pecific Device Code 8G, 8J, 8K, 8M ORDERING INORMATION ee detailed ordering and shipping information on page of this data sheet. emiconductor Components Industries, LLC, 205 June, 208 Rev. Publication Order Number: 8M/D
2 8G 8M ABOLUTE MAXIMUM RATING (T A = 25 C unless otherwise noted) Value ymbol Rating 8G 8J 8K 8M Unit V RRM Maximum Repetitive Peak Reverse Voltage V V RM Maximum RM Reverse Voltage V V DC DC Blocking Voltage V I (AV) Maximum Average Rectified orward Current 8 A I M Peak orward urge Current: 8. ms ingle Half ine Wave uperimposed on Rated Load 20 A T J Operating Junction Temperature Range 55 to +50 C T TG torage Temperature Range 55 to +50 C tresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERITIC (T A = 25 C unless otherwise noted) (Note ) ymbol Characteristic Minimum Land Pattern Maximum Land Pattern Unit R JA Junction to Ambient Thermal Resistance C/W Ψ JL Junction to Lead Thermal Characteristics, Thermocouple oldered to Anode 20 2 C/W Junction to Lead Thermal Characteristics, Thermocouple oldered to Cathode 6 5. The thermal resistances (R JA & Ψ JL ) are characterized with device mounted on the following R4 printed circuit boards, as shown in igure and igure 2. PCB size: 76.2 x 4. mm. Minimum land pattern size: 4.9 x 4.8 mm (big pattern, x),.4 x.52 mm (small pattern, x2). Maximum land pattern size: 0 x 0 mm (pattern, x2). orce line trace size = 55 mils, sense line trace size = 4 mils. igure. Minimum Land Pattern of 2 oz Copper igure 2. Maximum Land Pattern of 2 oz Copper ELECTRICAL CHARACTERITIC (T A = 25 C unless otherwise noted) ymbol Parameter Conditions Min Typ Max Unit V orward Voltage I = 8 A V I = 8 A, T A = 25 C I R DC Reverse Current V R = V DC A V R = V DC, T A = 25 C 84 T rr Reverse Recovery Time I = 0.5 A, I R = A, I rr = 0.25 A.7 s C J Junction Capacitance V R = 0 V, f = MHz 8 p Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2
3 8G 8M ORDERING INORMATION Part Number Top Mark Package hipping 8G 8G TO 277 L (Pb ree/halogen ree) 8J 8J TO 277 L (Pb ree/halogen ree) 8K 8K TO 277 L (Pb ree/halogen ree) 8M 8M TO 277 L (Pb ree/halogen ree) or information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging pecifications Brochure, BRD80/D.
4 8G 8M TYPICAL PERORMANCE CHARACTERITIC I, Average orward Current (A) T L (Cathode, Min. Pad) T A ( cm x cm Pad) T A (Min. Pad) C J, Junction Capacitance (p) Ambient / Lead Temperature ( C) V R, Reverse Voltage (V) igure. orward Current Derating Curve igure 4. Typical Junction Capacitance 000 T A = 50 C I R, Reverse Current ( A) 00 T A = 25 C 0 T A = 75 C 0. T A = 25 C 0.0 T A = 55 C E I, orward Current (A) T A = 75 C 0 T A = 25 C T A = 50 C T A = 25 C T A = 55 C.0..2 V R, Reverse Voltage (V) V, orward Voltage (V) igure 5. Typical Reverse Characteristics igure 6. Typical orward Characteristics 00 Peak orward urge Current (A) Number of Cycles igure 7. Maximum Non Repetitive Peak orward urge Current 4
5 MECHANICAL CAE OUTLINE PACKAGE DIMENION TO 277 LD CAE 40BQ IUE O DATE 0 EP 206 DOCUMENT NUMBER: TATU: NEW TANDARD: emiconductor Components Industries, LLC, 2002 October, 2002 Rev. 0 DECRIPTION: 98AON86G ON EMICONDUCTOR TANDARD TO 277 LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped CONTROLLED COPY in red. Case Outline Number: PAGE O XXX 2
6 DOCUMENT NUMBER: 98AON86G PAGE 2 O 2 IUE REVIION DATE O RELEAED OR PRODUCTION ROM AIRCHILD TO277A0 TO ON 0 EP 206 EMICONDUCTOR. REQ. BY J. LETTERMAN. ON emiconductor and are registered trademarks of emiconductor Components Industries, LLC (CILLC). CILLC reserves the right to make changes without further notice to any products herein. CILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does CILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in CILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. CILLC does not convey any license under its patent rights nor the rights of others. CILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the CILLC product could create a situation where personal injury or death may occur. hould Buyer purchase or use CILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold CILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that CILLC was negligent regarding the design or manufacture of the part. CILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. emiconductor Components Industries, LLC, 206 eptember, 206 Rev. O Case Outline Number: 40BQ
7 ON emiconductor and are trademarks of emiconductor Components Industries, LLC dba ON emiconductor or its subsidiaries in the United tates and/or other countries. ON emiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON emiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON emiconductor reserves the right to make changes without further notice to any products herein. ON emiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON emiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON emiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON emiconductor. Typical parameters which may be provided in ON emiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON emiconductor does not convey any license under its patent rights nor the rights of others. ON emiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any DA Class medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. hould Buyer purchase or use ON emiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON emiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON emiconductor was negligent regarding the design or manufacture of the part. ON emiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INORMATION LITERATURE ULILLMENT: Literature Distribution Center for ON emiconductor 952 E. 2nd Pkwy, Aurora, Colorado 800 UA Phone: or Toll ree UA/Canada ax: or Toll ree UA/Canada orderlit@onsemi.com N. American Technical upport: Toll ree UA/Canada Europe, Middle East and Africa Technical upport: Phone: ON emiconductor Website: Order Literature: or additional information, please contact your local ales Representative
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