SOT23 3. Part Number Compliance Marking Reel Size(inches) Tape Width(mm) Quantity Per Reel DESDA5V3LQ-7 Automotive RD ,000/Tape & Reel

Size: px
Start display at page:

Download "SOT23 3. Part Number Compliance Marking Reel Size(inches) Tape Width(mm) Quantity Per Reel DESDA5V3LQ-7 Automotive RD ,000/Tape & Reel"

Transcription

1 YM YW 5V3Q F M V Y roduct ummary V BMin) Max) Max) 5.3V 2 22pF escription his new generation V is designed to protect sensitive electronics from the damage due to. he combination of small size and high surge capability makes it ideal for use in utomotive nfotainment applications. B Modules HM nputs nfotainment onsoles Features and benefits rovides rotection per tandard: ir ±6kV, ontact ±9kV 2 hannels of rotection 25W eak ulse ower ypically sed at omputers, rinters and ommunication ystems otally ead-free & Fully oh ompliant otes & 2) Halogen and ntimony Free. Green evice ote 3) Qualified to -Q tandards for High eliability apable ote 4) Mechanical ata ase: ase Material: Molded lastic, Green Molding ompound. Flammability lassification ating 94V- Moisture ensitivity: evel per J--2 erminals: Matte in Finish nnealed over lloy 42 eadframe ead Free lating). olderable per M--22, Method 28 Weight:.89 grams pproximate) 3 2 op View evice chematic rdering nformation ote 5) otes: art umber ompliance Marking eel izeinches) ape Widthmm) Quantity er eel 5V3Q-7 utomotive 7 8 3,/ape & eel. o purposely added lead. Fully irective 22/95/ oh), 2/65/ oh 2) & 25/863/ oh 3) compliant. 2. ee for more information about iodes ncorporated s definitions of Halogen- and ntimony-free, "Green" and ead-free. 3. Halogen- and ntimony-free "Green products are defined as those which contain <9ppm bromine, <9ppm chlorine <5ppm total Br + l) and <ppm antimony compounds. 4. utomotive products are -Q qualified and are capable. efer to 5. For packaging details, go to our website at Marking nformation = roduct ype Marking ode YM = ate ode Marking Y = Year ex: = 27) M = Month ex: 9 = eptember) ate ode ey Year ode F G H J Month Jan Feb Mar pr May Jun Jul ug ep ct ov ec ode V3Q ocument number: 4328 ev. - 2 of 5

2 , W mw) 5V3Q Maximum = +25, unless otherwise specified.) haracteristic ymbol Value nit onditions eak ulse ower issipation 25 W 8/2μs, Figure 2 eak ulse urrent 2 8/2μs, Figure 2 rotection ontact ischarge V _ontact ±9 kv tandard rotection ir ischarge V _ir ±6 kv tandard rotection Human Body Model V HBM ±25 kv M 883 Method 35-6 hermal haracteristics haracteristic ymbol Value nit ower issipation ote 6) 25 mw hermal esistance, Junction to mbient ote 6) θj 5 /W perating and torage emperature ange J, G -55 to +5 lectrical = +25, unless otherwise specified.) haracteristic ymbol Min yp Max nit est onditions everse Breakdown Voltage V B V = m everse urrent ote 7) M 2 μ V M = 3V Forward Voltage V F.25 V F = 2m ynamic esistance.28 pp = 5, t = 2.5μs hannel nput apacitance 22 pf V = V, f = MHz otes: 6. evice mounted on F-4 B pad layout 2oz copper) as shown in iodes ncorporated s package outline Fs, which can be found on our website at 7. hort duration pulse test used to minimize self-heating effect ote , MB M ) Figure ower erating urve ) p % 5,, %) t, M µs) Figure 2 ypical 8 x 2µs ulse Waveform 5V3Q ocument number: 4328 ev of 5

3 , pf) F, FW m), V n) G % F W 5V3Q, ote W ) W,, W W), J = 5 /W ) m W F, F, , MB M ) 癈 ) Figure 3 ower issipation vs. mbient emperature V F, FW VG V) Figure 5 ypical Forward haracteristics 8 = 5 = 25 = 85 = 25 = -55,, t, µs) Figure 4 Max. eak ulse ower vs. ulse uration = 25 癈 = V, V VG V) Figure 6 ypical everse haracteristics 7 f = MHz V, V VG V) Figure 7 otal apacitance vs. everse Voltage 5V3Q ocument number: 4328 ev of 5

4 5V3Q ackage utline imensions lease see for the latest version. B F H G J M ll 7 GG.25 a im Min Max yp B F G H J M a 8 -- ll imensions in mm uggested ad ayout lease see for the latest version. Y Y imensions Value in mm) 2. X.8 X.35 Y.9 Y 2.9 X X 5V3Q ocument number: 4328 ev of 5

5 5V3Q M M WY F Y, X M, WH G H M, G, B M, H M W F MHBY F F H QV H W F Y J). iodes ncorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. iodes ncorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does iodes ncorporated convey any license under its patent or trademark rights, nor the rights of others. ny ustomer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold iodes ncorporated and all the companies whose products are represented on iodes ncorporated website, harmless against all damages. iodes ncorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. hould ustomers purchase or use iodes ncorporated products for any unintended or unauthorized application, ustomers shall indemnify and hold iodes ncorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. roducts described herein may be covered by one or more nited tates, international or foreign patents pending. roduct names and markings noted herein may also be covered by one or more nited tates, international or foreign trademarks. his document is written in nglish but may be translated into multiple languages for reference. nly the nglish version of this document is the final and determinative format released by iodes ncorporated. F iodes ncorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the hief xecutive fficer of iodes ncorporated. s used herein:. ife support devices or systems are devices or systems which:. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. ustomers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of iodes ncorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by iodes ncorporated. Further, ustomers must fully indemnify iodes ncorporated and its representatives against any damages arising out of the use of iodes ncorporated products in such safety-critical, life support devices or systems. opyright 28, iodes ncorporated 5V3Q ocument number: 4328 ev of 5

Top View BAS70WQ BAS70W-04Q BAS70W-05Q BAS70W-06Q

Top View BAS70WQ BAS70W-04Q BAS70W-05Q BAS70W-06Q SUC MOU SCHOKY BI DIOD Product Summary V M (V) I O (m) V (MX) @ 1m (V) I (MX) @ V = 50V (μ) 70 70 0.41 0.1 pplications SMPS DC-DC Converter reewheeling Diodes everse Polarity Protection Blocking Diodes

More information

OBSOLETE. Features. Mechanical Data PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR

OBSOLETE. Features. Mechanical Data PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR PNP PRE-BIASED SMALL SIGNAL SURFAE MOUNT TRANSISTOR Obsolete Part Number Alternative Part Number DDTA4EA DDTA5EA DDTA3EA DDTA4EA DDTA43EA DDTA44EA Features Epitaxial Planar Die onstruction omplementary

More information

Case Material: Molded Plastic. UL Flammability Classification Low Reverse Leakage Current

Case Material: Molded Plastic. UL Flammability Classification Low Reverse Leakage Current Pb 4A GLASS PASSIVATED BRIDGE RECTIFIER Features Mechanical Data Glass Passivated Die Construction Case: Rating to 1,000V PRV Case Material: Molded Plastic. UL Flammability Classification Low Reverse Leakage

More information

ZXBM1017 OBSOLETE PART DISCONTINUED PART OBSOLETE - USE ZXBM1021 VARIABLE SPEED SINGLE- PHASE BLDC MOTOR CONTROLLER ZXBM of 10

ZXBM1017 OBSOLETE PART DISCONTINUED PART OBSOLETE - USE ZXBM1021 VARIABLE SPEED SINGLE- PHASE BLDC MOTOR CONTROLLER ZXBM of 10 VARIABLE SPEED SINGLE- PHASE BLDC MOTOR CONTROLLER 1 of 10 2 of 10 3 of 10 4 of 10 5 of 10 6 of 10 7 of 10 8 of 10 9 of 10 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR

More information

FS8G - FS8M. 8 A Standard Recovery Surface Mount Rectifiers

FS8G - FS8M. 8 A Standard Recovery Surface Mount Rectifiers 8G - 8M 8 A tandard Recovery urface Mount Rectifiers Description The 8G to 8M series offers breakthrough size and performance. It sinks 8 A DC forward current and provides up to 20 A surge current capability

More information

FSV10120V. Ultra-Low VF Schottky Rectifier, 10 A, 120 V

FSV10120V. Ultra-Low VF Schottky Rectifier, 10 A, 120 V Ultra-Low V chottky Rectifier, 10 A, 120 V eatures Ultra Low orward Voltage Drop Low Thermal Resistance Very Low Profile: Typical Height of 1.1 mm Trench chottky Technology Green Molding Compound as per

More information

Is Now Part of. To learn more about ON Semiconductor, please visit our website at

Is Now Part of. To learn more about ON Semiconductor, please visit our website at Is Now Part of To learn more about ON emiconductor, please visit our website at www.onsemi.com Please note: As part of the airchild emiconductor integration, some of the airchild orderable part numbers

More information

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at Is Now Part of To learn more about ON emiconductor, please visit our website at www.onsemi.com ON emiconductor and the ON emiconductor logo are trademarks of emiconductor Components Industries, LLC dba

More information

BAS70-00-V to BAS70-06-V

BAS70-00-V to BAS70-06-V Small Signal Schottky Diodes, Single & Dual Features These diodes feature very low turn-on voltage and fast switching These devices are protected by a PN junction guard ring against excessive voltage,

More information

SRR4818A Series - Shielded Power Inductors

SRR4818A Series - Shielded Power Inductors *RoHS COMPLIANT & AEC APPROVED Features n Shielded construction n Inductance range: 1 to 47 µh n Heating current up to 5.1 A n AEC-Q2 qualified n RoHS compliant* and halogen free** Applications n Automotive

More information

CAV24C512. EEPROM Serial 512-Kb I 2 C - Automotive Grade 1

CAV24C512. EEPROM Serial 512-Kb I 2 C - Automotive Grade 1 V24512 EEROM erial 512-b I 2 - utomotive Grade 1 Description he V24512 is a EEROM erial 512 b I 2, internally organized as 65,536 words of 8 bits each. It features a 128 byte page write buffer and supports

More information

FEATURES [31.750] Min.

FEATURES [31.750] Min. Polyester Film/Foil Capacitors Sleeved, Miniature, Axial ead FEATURES Axial lead, designed for automatic insertion Non-inductively wound, extended foil construction ead wire has metal end cap for connection

More information

MH Series High Current Chip Ferrite Beads

MH Series High Current Chip Ferrite Beads *ohs COMPLIANT & **HALOGEN FEE Features High resistance to heat and humidity esistance to mechanical shock and pressure Accurate dimensions for automatic surface mounting Wide impedance range ohs compliant*

More information

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at Is Now Part of To learn more about ON Semiconductor, please visit our website at ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor

More information

UD0506T-TL-H. Planar Ultrafast Rectifier Low VF type, 5A, 600V, 1.3V, TP/TP-FA. Features. Specifications

UD0506T-TL-H. Planar Ultrafast Rectifier Low VF type, 5A, 600V, 1.3V, TP/TP-FA. Features. Specifications Ordering number : ENA10A UD006T Planar Ultrafast Rectifier Low VF type, A, 600V, 1.V, TP/TP-FA http://onsemi.com Features High breakdown voltage (VRRM=600V) Low noise at the time of reverse recovery Halogen

More information

Power dissipation comparable to SOT23 Package height typ mm AEC-Q101 qualified

Power dissipation comparable to SOT23 Package height typ mm AEC-Q101 qualified Rev. 1 12 October 2017 Preliminary data sheet 1 Product profile 1.1 General description General-purpose Zener diode, encapsulated in an SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic

More information

DCR DCR. Irms (A) Isat (A) Typ. Max. Recommended Layout NATURAL COOLING

DCR DCR. Irms (A) Isat (A) Typ. Max. Recommended Layout NATURAL COOLING *RoHS COMPLIANT & AEC APPROVED R7 Features Shielded construction Carbonyl powder core High saturation current Low profile - 1. mm Inductance range:. to µh AEC-Q qualified RoHS compliant* and halogen free**

More information

DS9638 RS-422 Dual High Speed Differential Line Driver

DS9638 RS-422 Dual High Speed Differential Line Driver 1 www.ti.com SNLS389D MAY 1998 REVISED APRIL 2013 RS-422 Dual High Speed Differential Line Driver Check for Samples: 1FEATURES DESCRIPTION 2 Single 5V Supply The is a Schottky, TTL compatible, dual differential

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BYV29 series Rectifier diodes ultrafast

DISCRETE SEMICONDUCTORS DATA SHEET. BYV29 series Rectifier diodes ultrafast DISCREE SEMICONDUCORS DAA SHEE September 208 FEAURES SYMBOL QUICK REFERENCE DAA Low forward volt drop Fast switching Soft recovery characteristic High thermal cycling performance Low thermal resistance

More information

PACKAGE OPTION ADDENDUM www.ti.com 25-May-2018 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan UC2638DW NRND SOIC DW 20 25 Green (RoHS UC2638DWG4

More information

50 V, 3 A PNP low VCEsat (BISS) transistor

50 V, 3 A PNP low VCEsat (BISS) transistor Rev. 6 28 June 2011 Product data sheet 1. Product profile 1.1 General description PNP low V CEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic

More information

Schottky Barrier Diode Dual Series Schottky Barrier Diode for Mixer and Detector 5V, 30mA, 0.69pF, CP

Schottky Barrier Diode Dual Series Schottky Barrier Diode for Mixer and Detector 5V, 30mA, 0.69pF, CP Ordering number : EN40C 1SS1 Schottky Barrier Diode Dual Series Schottky Barrier Diode for Mixer and Detector V, 0mA, 0.69pF, CP http://onsemi.com Features Series connection of elements in a small-sized

More information

NSVP249SDSF3. PIN Diode Dual series PIN Diode for VHF, UHF and AGC

NSVP249SDSF3. PIN Diode Dual series PIN Diode for VHF, UHF and AGC NSVP49SDSF PIN Diode Dual series PIN Diode for VHF, UHF and AGC This PIN diode is designed to realize compact and efficient designs. Two PIN diodes are incorporated in one SC 0 package. The use of dual

More information

SRR4828A Series - Shielded Power Inductors

SRR4828A Series - Shielded Power Inductors *RoHS COMPLIANT & AEC APPROVED 22 Features Shielded construction Inductance range: 1.2 to 22 µh Heating current up to 5 A AEC-Q2 qualified RoHS compliant* and halogen free** SRRA Series - Shielded Power

More information

FAST AND LS TTL. Package Information Including Surface Mount

FAST AND LS TTL. Package Information Including Surface Mount ST S TT ackage Information Including Surface ount 7 IO OI SU OUT WY SU OUT? Surface ount Technology is now being utilized to offer answers to many problems that have been created in the use of insertion

More information

PACKAGE OPTION ADDENDUM www.ti.com 5-Jan-2018 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish (6) MSL Peak Temp (3) Op Temp

More information

TB General description. 2. Features and benefits. 3. Applications. 4. Pinning information. 5. Ordering information

TB General description. 2. Features and benefits. 3. Applications. 4. Pinning information. 5. Ordering information 30 September 2016 Product data sheet 1. General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO92) plastic package intended for use in low power SMPS

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BYT79 series Rectifier diodes ultrafast

DISCRETE SEMICONDUCTORS DATA SHEET. BYT79 series Rectifier diodes ultrafast DISCREE SEMICONDUCORS DAA SHEE September 208 FEAURES SYMBOL QUICK REFERENCE DAA Low forward volt drop Fast switching Soft recovery characteristic High thermal cycling performance Low thermal resistance

More information

PACKAGE OPTION ADDENDUM

PACKAGE OPTION ADDENDUM PACKAGE OPTION ADDENDUM www.ti.com 24-Aug-2018 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish (6) MSL Peak Temp (3) Op Temp

More information

CAT24C512. EEPROM Serial 512-Kb I 2 C

CAT24C512. EEPROM Serial 512-Kb I 2 C 24512 EEPROM erial 512-b I 2 Description he 24512 is a EERPOM erial 512 b I 2 internally organized as 65,536 words of 8 bits each. It features a 128 byte page write buffer and supports the tandard (100

More information

BAT54 series 1. Product profile 2. Pinning information Schottky barrier diodes 1.1 General description 1.2 Features and benefits

BAT54 series 1. Product profile 2. Pinning information Schottky barrier diodes 1.1 General description 1.2 Features and benefits SOT2 Rev. 5 5 October 2012 1. Product profile 1.1 General description Planar with an integrated guard ring for stress protection, encapsulated in a small SOT2 (TO-26AB) Surface-Mounted Device (SMD) plastic

More information

PACKAGE OPTION ADDENDUM www.ti.com 24-Aug-2018 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan UCC2807D-1 ACTIVE SOIC D 8 75 Green (RoHS UCC2807D-2

More information

PACKAGE OPTION ADDENDUM www.ti.com 22-Jun-2018 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish (6) MSL Peak Temp (3) Op Temp

More information

Low Profile, High Current IHLP Inductors

Low Profile, High Current IHLP Inductors ow Profile, High Current IHP Inductors IHP-55FD-1 Manufactured under one or more of the following: US Patents;,198,375/,,7/,9,89/,,. Several foreign patents, and other patents pending. STANDARD EECTRICA

More information

Ultrafast epitaxial rectifier diode in a SOT226 (I2PAK) plastic package. Discontinuous Current Mode (DCM) Power Factor Correction (PFC)

Ultrafast epitaxial rectifier diode in a SOT226 (I2PAK) plastic package. Discontinuous Current Mode (DCM) Power Factor Correction (PFC) Rev. 01 4 February 2010 Product data sheet 1. Product profile 1.1 General description Ultrafast epitaxial rectifier diode in a SOT226 (I2PAK) plastic package 1.2 Features and benefits Fast switching High

More information

Is Now Part of. To learn more about ON Semiconductor, please visit our website at

Is Now Part of. To learn more about ON Semiconductor, please visit our website at Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers

More information

TIP42 / TIP42C PNP Epitaxial Silicon Transistor

TIP42 / TIP42C PNP Epitaxial Silicon Transistor TIP42 / TIP42C PNP Epitaxial Silicon Transistor Features Medium Power Linear Switching Applications Complement to TIP41 Series Ordering Information 1 TO-220 1.Base 2.Collector 3.Emitter Part Number Top

More information

FFH60UP60S, FFH60UP60S3. 60 A, 600 V Ultrafast Rectifier

FFH60UP60S, FFH60UP60S3. 60 A, 600 V Ultrafast Rectifier FFH60UP60S, FFH60UP60S3 60 A, 600 V Ultrafast Rectifier Description The FFH60UP60S, FFH60UP60S3 is an ultrafast diode with low forward voltage drop and rugged UIS capability. This device is intended for

More information

SN74F08 QUADRUPLE 2-INPUT POSITIVE-AND GATE

SN74F08 QUADRUPLE 2-INPUT POSITIVE-AND GATE SN74F08 QUADRUPLE 2-INPUT POSITIVE-AND GATE SDFS038A D2932, MARCH 1987 REVISED OCTOBER 1993 Package Options Include Plastic Small-Outline Packages and Standard Plastic 300-mil DIPs description The SN74F08

More information

PMBFJ111; PMBFJ112; PMBFJ113

PMBFJ111; PMBFJ112; PMBFJ113 SOT23 PMBFJ111; PMBFJ112; PMBFJ113 Rev. 4 20 September 2011 Product data sheet 1. Product profile 1.1 General description Symmetrical in a SOT23 package. 1.2 Features and benefits High-speed switching

More information

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T a = 25 ) Symbol. Note. V RM V R I FM I O P D I FSM T j T stg

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T a = 25 ) Symbol. Note. V RM V R I FM I O P D I FSM T j T stg Switching Diodes 1SS302A Silicon Epitaxial Planar 1SS302A 1. Applications Ultra-High-Speed Switching 2. Features (1) Fast reverse recovery time : t rr = 1.6 ns (typ.) (2) AEC-Q101 qualified 3. Packaging

More information

DISCRETE SEMICONDUCTORS DATA SHEET

DISCRETE SEMICONDUCTORS DATA SHEET DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGY687 600 MHz, 21.5 db gain push-pull amplifier Supersedes data of 1995 Sep 11 2001 Nov 08 FEATURES Excellent linearity Extremely low noise Silicon

More information

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK330

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK330 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications Unit: mm High breakdown voltage: V GDS = 50 V High

More information

To request a full data sheet, please send an to:

To request a full data sheet, please send an  to: To request a full data sheet, please send an email to: display_contact@list.ti.com. PACKAGE OPTION ADDENDUM 11-Apr-2013 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins

More information

DUAL SCHOTTKY DIODE BRIDGE

DUAL SCHOTTKY DIODE BRIDGE UC1610 UC3610 DUAL SCHOTTKY DIODE BRIDGE SLUS339B JUNE 1993 REVISED DECEMBER 2004 FEATURES Monolithic Eight-Diode Array Exceptional Efficiency Low Forward Voltage Fast Recovery Time High Peak Current Small

More information

SN54LS181, SN54S181 SN74LS181, SN74S181 ARITHMETIC LOGIC UNITS/FUNCTION GENERATORS

SN54LS181, SN54S181 SN74LS181, SN74S181 ARITHMETIC LOGIC UNITS/FUNCTION GENERATORS PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include

More information

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK mw

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK mw TOSHIBA Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications Unit: mm Two devices in a ultra super mini (five pins) package High Y fs : Y fs = 15 ms (typ.)

More information

VHF variable capacitance diode

VHF variable capacitance diode Rev. 4 6 September 2011 Product data sheet 1. Product profile 1.1 General description The is a variable capacitance diode, fabricated in planar technology and encapsulated in the SOD323 (SC-76) very small

More information

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T a = 25 ) Symbol. Note. V RM V R I O I FSM T j T stg.

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T a = 25 ) Symbol. Note. V RM V R I O I FSM T j T stg. Schottky Barrier Diode CCS15S30 Silicon Epitaxial CCS15S30 1. Applications High-Speed Switching 2. Features (1) Low forward voltage: V F (1) = 0.33 V (typ.) 3. Packaging and Internal Circuit 1: Cathode

More information

PACKAGE OPTION ADDENDUM www.ti.com 24-Aug-2018 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish (6) MSL Peak Temp (3) Op Temp

More information

PACKAGE OPTION ADDENDUM www.ti.com 23-Apr-2005 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3) 5962-9755301QCA

More information

BLF7G20L-160P; BLF7G20LS-160P

BLF7G20L-160P; BLF7G20LS-160P BLF7G20L-160P; BLF7G20LS-160P Rev. 01 22 June 2010 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz

More information

For a detailed datasheet and other design support tools, please contact

For a detailed datasheet and other design support tools, please contact This device is designed specifically to power Intel processors under a strict disclosure agreement with Intel Corporation. The end user must have a current CNDA in place with Intel Corporation to access

More information

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC

More information

SRP5030CA Series Shielded Power Inductors

SRP5030CA Series Shielded Power Inductors *RoHS COMPLIANT, **HALOGEN FREE & AEC-Q2 COMPLIANT 1726 Features Shielded construction Metal alloy powder core High saturation current Flat wire AEC-Q2 compliant RoHS compliant* and halogen free** SRP53CA

More information

... Data sheet acquired from Harris Semiconductor SCHS115D Revised September Copyright 2003 Texas Instruments Incorporated

... Data sheet acquired from Harris Semiconductor SCHS115D Revised September Copyright 2003 Texas Instruments Incorporated Data sheet acquired from Harris Semiconductor SCHS115D Revised September 2003 The CD4093B types are supplied in 14-lead hermetic dual-in-line ceramic packages (F3A suffix), 14-lead dual-in-line plastic

More information

CAV24C32. EEPROM Serial 32-Kb I 2 C - Automotive Grade 1

CAV24C32. EEPROM Serial 32-Kb I 2 C - Automotive Grade 1 V2432 EEPROM erial 32-b I 2 - utomotive Grade 1 Description he V2432 is a EEPROM erial 32 b I 2 devices, internally organized as 4096 words of 8 bits each. It features a 32 byte page write buffer and supports

More information

SERIES 2000 STICK ANTENNA

SERIES 2000 STICK ANTENNA Not Recommended for New designs RI-ANT-S01C, RI-ANT-S02C SERIES 2000 STICK ANTENNA SCBS851 DECEMBER 2002 REVISED DECEMBER 2005 FEATURES Best in Class Performance Through Patented HDX Technology IP 64+

More information

SN54HC377, SN54HC378, SN54HC379 SN74HC377, SN74HC378, SN74HC379 OCTAL, HEX, AND QUAD D-TYPE FLIP-FLOPS WITH CLOCK ENABLE

SN54HC377, SN54HC378, SN54HC379 SN74HC377, SN74HC378, SN74HC379 OCTAL, HEX, AND QUAD D-TYPE FLIP-FLOPS WITH CLOCK ENABLE SN54HC377, SN54HC378, SN54HC379 SN74HC377, SN74HC378, SN74HC379 OCTAL, HEX, AND QUAD D-TYPE FLIP-FLOPS WITH CLOCK ENABLE SCLS202 D2684, DECEMBER 1982 REVISED JUNE 1989 PRODUCTION DATA information is current

More information

Lower Voltage Ceramic Disc Capacitors 2 kv DC to 7.5 kv DC

Lower Voltage Ceramic Disc Capacitors 2 kv DC to 7.5 kv DC Lower Voltage eramic isc apacitors 2 kv to 7.5 kv 564R and 565R Series Fig. 1 max. LEA OFFSE 'LO' NOMINAL ~ HIKNESS - 0." EXEPION 1.250" min. (32 mm) inned opper Leads INSULAION RESISANE 2 kv min. 10 000

More information

PACKAGE OPTION ADDENDUM

PACKAGE OPTION ADDENDUM PACKAGE OPTION ADDENDUM www.ti.com 24-Aug-2018 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish (6) MSL Peak Temp (3) Op Temp

More information

Low Profile, High Current IHLP Inductors

Low Profile, High Current IHLP Inductors IHP-BZ-11 ow Profile, High Current IHP Inductors Manufactured under one or more of the following: US Patents; 6,19,375/6,,7/6,9,9/6,,. Several foreign patents, and other patents pending. STANDARD EECTRICA

More information

Data sheet acquired from Harris Semiconductor SCHS093C Revised October 2003

Data sheet acquired from Harris Semiconductor SCHS093C Revised October 2003 Data sheet acquired from Harris Semiconductor SCHS093C Revised October 2003 The CD14538B is interchangeable with type MC14538 and is similar to and pin-compatible with the CD4098B* and CD4538B. It can

More information

PACKAGE OPTION ADDENDUM

PACKAGE OPTION ADDENDUM PACKAGE OPTION ADDENDUM www.ti.com 15-Apr-2017 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish (6) MSL Peak Temp (3) Op Temp

More information

SN54107, SN54LS107A, SN74107, SN74LS107A DUAL J-K FLIP-FLOPS WITH CLEAR

SN54107, SN54LS107A, SN74107, SN74LS107A DUAL J-K FLIP-FLOPS WITH CLEAR SN54107, SN54LS107A, SN74107, SN74LS107A DUAL J-K FLIP-FLOPS WITH CLEAR SDLS036 DECEMBER 1983 REVISED MARCH 1988 PRODUCTION DATA information is current as of publication date. Products conform to specifications

More information

Passivated, sensitive gate thyristors in a SOT54 plastic package. General purpose switching and phase control.

Passivated, sensitive gate thyristors in a SOT54 plastic package. General purpose switching and phase control. Rev. 5 November Product data sheet. Product profile. General description Passivated, sensitive gate thyristors in a SOT54 plastic package.. Features and benefits Designed to be interfaced directly to microcontrollers,

More information

Low Profile, High Current IHLP Inductors

Low Profile, High Current IHLP Inductors ow Profile, High Current IHP Inductors Manufactured under one or more of the following: US Patents; 6,198,375/6,4,744/6,449,829/6,4,244. Several foreign patents, and other patents pending. STANDARD EECTRICA

More information

Data sheet acquired from Harris Semiconductor SCHS068C Revised October 2003

Data sheet acquired from Harris Semiconductor SCHS068C Revised October 2003 Data sheet acquired from Harris Semiconductor SCHS068C Revised October 2003 CD4503B is a hex noninverting buffer with 3-state outputs having high sink- and source-current capability. Two disable controls

More information

SN54LS266, SN74LS266 QUADRUPLE 2-INPUT EXCLUSIVE-NOR GATES WITH OPEN-COLLECTOR OUTPUTS

SN54LS266, SN74LS266 QUADRUPLE 2-INPUT EXCLUSIVE-NOR GATES WITH OPEN-COLLECTOR OUTPUTS SN54LS266, SN74LS266 QUADRUPLE 2-INPUT EXCLUSIVE-NOR GATES WITH OPEN-COLLECTOR OUTPUTS SDLS151 DECEMBER 1972 REVISED MARCH 1988 PRODUCTION DATA information is current as of publication date. Products conform

More information

SN54LS21, SN74LS21 DUAL 4-INPUT POSITIVE-AND GATES

SN54LS21, SN74LS21 DUAL 4-INPUT POSITIVE-AND GATES SN54LS21, SN74LS21 DUAL 4-INPUT POSITIVE-AND GATES SDLS139 APRIL 1985 REVISED MARCH 1988 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms

More information

TOSHIBA Transistor Silicon NPN Epitaxial Type TMBT3904

TOSHIBA Transistor Silicon NPN Epitaxial Type TMBT3904 TOSHIBA Transistor Silicon NPN Epitaxial Type TMBT3904 Audio Frequency General Purpose Amplifier Applications High voltage and high current : VCEO = 50 V, IC = 150 ma (max) Complementary to TMBT3906 Absolute

More information

FEATURES. IHLP-2525CZ μh ± 20 % ER e3 MODEL INDUCTANCE VALUE INDUCTANCE TOLERANCE PACKAGE CODE JEDEC LEAD (Pb)-FREE STANDARD

FEATURES. IHLP-2525CZ μh ± 20 % ER e3 MODEL INDUCTANCE VALUE INDUCTANCE TOLERANCE PACKAGE CODE JEDEC LEAD (Pb)-FREE STANDARD IHP-CZ- IHP Commercial Inductors, High Temperature ( C) Series DESIGN SUPPORT TOOS click logo to get started Models Available STANDARD EECTRICA SPECIFICATIONS INDUCTANCE ± % AT khz,. V, A (μh) Design Tools

More information

Low Profile, High Current IHLP Inductors

Low Profile, High Current IHLP Inductors Low Profile, High Current IHLP Inductors IHLP-6767GZ-1 Manufactured under one or more of the following: US Patents; 6,198,375/6,4,744/6,449,829/6,4,244. Several foreign patents, and other patents pending.

More information

K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET. Drop-In Replacement: CE3520K3. Part Number Order Number Package Quantity Marking Supplying Form

K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET. Drop-In Replacement: CE3520K3. Part Number Order Number Package Quantity Marking Supplying Form FEATURES Super low noise figure and high associated gain HETERO JUNCTION FIELD EFFECT TRANSISTOR K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NF = 0.75 db TYP., Ga = 10 db TYP. @ f = 20 GHz Micro-X

More information

FEATURES APPLICATIONS ± [5.18 ± 0.254] [3.0] Max.

FEATURES APPLICATIONS ± [5.18 ± 0.254] [3.0] Max. IHP-CZ- IHP Commercial Inductors, High Saturation Series DESIGN SUPPORT TOOS click logo to get started Models Available STANDARD EECTRICA SPECIFICATIONS INDUCTANCE ± % AT khz,.5 V, A (μh) Design Tools

More information

UNCLASSIFIED. FY 2017 Base FY 2017 OCO FY 2017 OCO. FY 2017 Base

UNCLASSIFIED. FY 2017 Base FY 2017 OCO FY 2017 OCO. FY 2017 Base II xhibit -40, udget ine Item ustification: 2017 rmy ate: ebruary 2016 ppropriation / udget ctivity / udget ub ctivity: 2032: issile rocurement, rmy / 02: ther issiles / 20: ir-o-urface issile ystem -1

More information

PACKAGE OPTION ADDENDUM

PACKAGE OPTION ADDENDUM PACKAGE OPTION ADDENDUM www.ti.com 17-Mar-2017 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish (6) MSL Peak Temp (3) Op Temp

More information

SOT815 Footprint dimensions (mm) 3.5 x 5.5 Footprint area (mm²) 19.3

SOT815 Footprint dimensions (mm) 3.5 x 5.5 Footprint area (mm²) 19.3 plastic, leadless dual in-line compatible thermal enhanced very thin quad flat package; 24 terminals; 0.5 mm pitch; 3.5 mm x 5.5 mm x 0.85 mm body 18 October 2018 Package information 1. Package summary

More information

Low Profile, High Current IHLP Inductors

Low Profile, High Current IHLP Inductors IHP-33DZ-1 ow Profile, High Current IHP Inductors Manufactured under one or more of the following: US Patents;,19,375/,,7/,9,9/,,. Several foreign patents, and other patents pending. STANDARD EECTRICA

More information

SYMBOL TYPE NUMBER VALUE UNIT. Power dissipation at Tamb = 60 ºC 1.5 W. Non repetitive peak zener dissipation (t = 10ms) 40 W

SYMBOL TYPE NUMBER VALUE UNIT. Power dissipation at Tamb = 60 ºC 1.5 W. Non repetitive peak zener dissipation (t = 10ms) 40 W DO-204AL (DO-41) Voltage Power Dissipation 10 to 200 V 1.5 W Maximum Ratings and Electrical Characteristics at 25 C FEATURE Glass passivated chip junction Hiperectifier structure for high reliability Cavity-free

More information

Data sheet acquired from Harris Semiconductor SCHS030D Revised December 2003

Data sheet acquired from Harris Semiconductor SCHS030D Revised December 2003 Data sheet acquired from Harris Semiconductor SCHS030D Revised December 2003 The CD4020B and CD4040B types are supplied in 16-lead hermetic dual-in-line ceramic packages (F3A suffix), 16-lead dual-in-line

More information

MT3421. Absolute Maximum Ratings(TA =25. General Description. Features. Thermal Characteristics

MT3421. Absolute Maximum Ratings(TA =25. General Description. Features. Thermal Characteristics General Description Features D G SOT-23 S Absolute Maximum Ratings(TA =25 unless otherwise noted) Symbol Parameter Ratings Units Thermal Characteristics Package Marking and Ordering Information Device

More information

Data sheet acquired from Harris Semiconductor SCHS057C Revised September 2003

Data sheet acquired from Harris Semiconductor SCHS057C Revised September 2003 Data sheet acquired from Harris Semiconductor SCHS057C Revised September 2003 The CD4073B, CD4081B, and CD4082B types are supplied in 14-lead hermetic dual-in-line ceramic packages (F3A suffix), 14-lead

More information

SN54HCT08, SN74HCT08 QUADRUPLE 2-INPUT POSITIVE-AND GATES

SN54HCT08, SN74HCT08 QUADRUPLE 2-INPUT POSITIVE-AND GATES SN54HCT08, SN74HCT08 QUADRUPLE 2-INPUT POSITIVE-AND GATES SCLS063D NOVEMBER 1988 REVISED AUIGUST 2003 Operating Voltage Range of 4.5 V to 5.5 V Outputs Can Drive Up To 10 LSTTL Loads Low Power Consumption,

More information

Low Profile, High Current IHLP Inductor

Low Profile, High Current IHLP Inductor IHP-BZ-1 ow Profile, High Current IHP Inductor Manufactured under one or more of the following: US Patents; 6,19,375/6,,7/6,9,9/6,,. Several foreign patents, and other patents pending. STANDARD EECTRICA

More information

PACKAGE OPTION ADDENDUM www.ti.com 17-Mar-2017 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan UC2906DW NRND SOIC DW 16 40 Green (RoHS UC2906DWG4

More information

PACKAGE OPTION ADDENDUM

PACKAGE OPTION ADDENDUM PCKGE OPTION DDENDUM www.ti.com 8-Oct-2017 PCKGING INFORMTION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish (6) MSL Peak Temp (3) Op Temp ( C)

More information

CAT24C32. EEPROM Serial 32-Kb I 2 C

CAT24C32. EEPROM Serial 32-Kb I 2 C 2432 EEPROM erial 32-b I 2 Description he 2432 is a EEPROM erial 32 b I 2 devices, internally organized as 4096 words of 8 bits each. It features a 32 byte page write buffer and supports the tandard (100

More information

Welcome. to the General Ledger Manual. How to Use This Guide. Contents. Index. Modules

Welcome. to the General Ledger Manual. How to Use This Guide. Contents. Index. Modules Welcome to the General edger anual How to se his Guide ontents ndex odules How to se his Guide Go to the How to se his Guide page (this page)....ext on page... Go to the ontents. Go to the previous page.

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BT134 series Triacs

DISCRETE SEMICONDUCTORS DATA SHEET. BT134 series Triacs DISCRETE SEMICONDUCTORS DATA SHEET August 997 GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated triacs in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for applications requiring

More information

SN54HCT04, SN74HCT04 HEX INVERTERS

SN54HCT04, SN74HCT04 HEX INVERTERS SN54HCT04, SN74HCT04 HEX INVERTERS SCLS042D JULY 1986 REVISED JULY 2003 Operating Voltage Range of 4.5 V to 5.5 V Outputs Can Drive Up To 10 LSTTL Loads Low Power Consumption, 20-µA Max I CC Typical t

More information

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit: mm High breakdown voltage: V CEO = 14 V (min) Complementary to 2SC5198 Recommended for 7-W high-fidelity audio

More information

SN54F02, SN74F02 QUADRUPLE 2-INPUT POSITIVE-NOR GATES

SN54F02, SN74F02 QUADRUPLE 2-INPUT POSITIVE-NOR GATES SN54F02, SN74F02 QUADRUPLE 2-INPUT POSITIVE-NOR GATES SDFS036A MARCH 1987 REVISED OCTOBER 1993 Package Options Include Plastic Small-Outline Packages, Ceramic Chip Carriers, and Standard Plastic and Ceramic

More information

Low Profile, High Current IHLP Inductors

Low Profile, High Current IHLP Inductors IHP-CZ- ow Profile, High Current IHP Inductors Manufactured under one or more of the following: US Patents; 6,9,75/6,,7/6,9,9/6,6,. Several foreign patents, and other patents pending. STANDARD EECTRICA

More information

PACKAGE OPTION ADDENDUM

PACKAGE OPTION ADDENDUM PACKAGE OPTION ADDENDUM www.ti.com 15-Apr-2017 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan SN74LS19ADR ACTIVE SOIC D 14 2500 Green (RoHS & no

More information

SN54F74, SN74F74 DUAL POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH CLEAR AND PRESET

SN54F74, SN74F74 DUAL POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH CLEAR AND PRESET SN54F74, SN74F74 DUAL POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH LEAR AND PRESET SDFS046A MARH 1987 REVISED OTOBER 1993 Package Options Include Plastic Small-Outline Packages, eramic hip arriers, and

More information

High Stability - High Temperature (230 C) Thin Film Wraparound Chip Resistors

High Stability - High Temperature (230 C) Thin Film Wraparound Chip Resistors High Stability - High Temperature (230 C) Thin Film Wraparound Chip Resistors INTRODUCTION For applications such as down hole applications, the need for parts able to withstand very severe conditions (temperature

More information

FEATURES APPLICATIONS. SRF TYP. (MHz) ± [5.18 ± 0.254] [2.0] Max.

FEATURES APPLICATIONS. SRF TYP. (MHz) ± [5.18 ± 0.254] [2.0] Max. IHP-BZ-11 IHP Commercial Inductors, ow DCR Series DESIGN SUPPORT TOOS click logo to get started Models Available STANDARD EECTRICA SPECIFICATIONS INDUCTANCE ± % AT khz,.5 V, A (μh) Design Tools Available

More information

SOT Package summary. plastic, single ended surface mounted package (LFPAK56D); 8 leads 8 October 2018 Package information

SOT Package summary. plastic, single ended surface mounted package (LFPAK56D); 8 leads 8 October 2018 Package information plastic, single ended surface mounted package (LFPK56D); 8 leads 8 October 2018 Package information 1. Package summary Terminal position code Package type descriptive code Package type industry code Package

More information

SOT363 Footprint dimensions (mm) 2.1 x 2 Footprint area (mm²) 4.2

SOT363 Footprint dimensions (mm) 2.1 x 2 Footprint area (mm²) 4.2 plastic, surface-mounted package; 6 leads; 0.65 mm pitch; 2.1 mm x 1.25 mm x 0.95 mm body 14 November 2018 Package information 1. Package summary Terminal position code Package type descriptive code Package

More information