CAT24C512. EEPROM Serial 512-Kb I 2 C

Size: px
Start display at page:

Download "CAT24C512. EEPROM Serial 512-Kb I 2 C"

Transcription

1 24512 EEPROM erial 512-b I 2 Description he is a EERPOM erial 512 b I 2 internally organized as 65,536 words of 8 bits each. It features a 128 byte page write buffer and supports the tandard (100 khz), Fast (400 khz) and Fast Plus (1 MHz) I 2 protocol. Write operations can be inhibited by taking the WP pin High (this protects the entire memory). External address pins make it possible to address up to eight devices on the same bus. On hip E (Error orrection ode) makes the device suitable for high reliability applications. Features upports tandard, Fast and Fast Plus I 2 Protocol 1.8 V to 5.5 V upply Voltage Range 128 Byte Page Write Buffer Hardware Write Protection for Entire Memory chmitt riggers and Noise uppression Filters on I 2 Bus Inputs (L and D) Low Power MO echnology 1,000,000 Program/Erase ycles 100 Year Data Retention Industrial and Extended emperature Range 8 pin, OI, OP, 8 pad UDFN and 8 ball WLP Packages hese Devices are Pb Free, Halogen Free/BFR Free and are RoH ompliant V OP 8 Y UFFIX E 948L OI 8 W UFFIX E 751BD V UDFN 8 HU5 UFFIX E 517BU OI 8 WIDE X UFFIX E 751BE PIN ONFIGURION V WP L D OI (W, X), OP (Y), UDFN (HU5) (op View) D 2 V OI 8 X UFFIX E 751BE WLP 8 8 UFFIX E 567JL L 1 Pin 1 Reference V WP 0 L 2, 1, D For the location of Pin 1, please consult the corresponding package drawing. WLP (8) (op View) WP V Figure 1. Functional ymbol Pin Name 0, 1, 2 D L WP V V PIN FUNION Function Device ddress erial Data erial lock Write Protect Power upply Ground ORDERING INFORMION ee detailed ordering and shipping information in the package dimensions section on page 10 of this data sheet. emiconductor omponents Industries, LL, 2015 May, 2018 Rev. 8 1 Publication Order Number: 24512/D

2 24512 MRING DIGRM YMXXX = pecific Device ode = ssembly Location ode Y = Production Year (Last Digit) M = Production Month (1 9, O, N, D) XXX = Last hree Digits of ssembly Lot Number = Pb Free Microdot OI 8 (W, X) 9L LL YM 9L = pecific Device ode = ssembly Location ode LL = Last wo Digits of ssembly Lot Number Y = Production Year (Last Digit) M = Production Month (1 9, O, N, D) = Pb Free Microdot UDFN 8 (HU5) 12 YMXXX OP 8 (Y) 12 = pecific Device ode = ssembly Location ode Y = Production Year (Last Digit) M = Production Month (1 9, O, N, D) XXX = Last hree Digits of ssembly Lot Number = Pb Free Microdot 9 YW WLP (8) 9 = pecific Device ode = ssembly Location Y = Production Year W = Production Week 2

3 24512 able 1. BOLUE MXIMUM RING Parameters Ratings Units torage emperature 65 to +150 Voltage on any Pin with Respect to Ground (Note 1) 0.5 to +6.5 V tresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. he D input voltage on any pin should not be lower than 0.5 V or higher than V V. During transitions, the voltage on any pin may undershoot to no less than 1.5 V or overshoot to no more than V V, for periods of less than 20 ns. able 2. RELIBILIY HRERII (Note 2) ymbol Parameter Min Units N END (Notes 3, 4) Endurance 1,000,000 Program/Erase ycles DR Data Retention 100 Years 2. hese parameters are tested initially and after a design or process change that affects the parameter according to appropriate E Q100 and JEDE test methods. 3. Page Mode, V = 5 V, he device uses E (Error orrection ode) logic with 6 E bits to correct one bit error in 4 data bytes. herefore, when a single byte has to be written, 4 bytes (including the E bits) are re-programmed. It is recommended to write by multiple of 4 bytes in order to benefit from the maximum number of write cycles. able 3. D.. OPERING HRERII V = 1.8 V to 5.5 V, = 40 to +85 and V = 2.5 V to 5.5 V, = 40 to +125, unless otherwise specified. ymbol Parameter est onditions Min Max Units I R Read urrent Read, f L = 400 khz/1 MHz 1 m I W Write urrent V = 1.8 V 1.8 m V = 5.5 V 2.5 I B tandby urrent ll I/O Pins at GND or V = 40 to = 40 to I L I/O Pin Leakage Pin at GND or V = 40 to = 40 to V IL1 Input Low Voltage 2.5 V V 5.5 V V V V IL2 Input Low Voltage 1.8 V V < 2.5 V V V V IH1 Input High Voltage 2.5 V V 5.5 V 0.7 V V V V IH2 Input High Voltage 1.8 V V < 2.5 V 0.75 V V V V OL1 Output Low Voltage V 2.5 V, I OL = 3.0 m 0.4 V V OL2 Output Low Voltage V < 2.5 V, I OL = 1.0 m 0.2 V Product parametric performance is indicated in the Electrical haracteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical haracteristics if operated under different conditions. able 4. PIN IMPEDNE HRERII V = 1.8 V to 5.5 V, = 40 to +85 and V = 2.5 V to 5.5 V, = 40 to +125, unless otherwise specified. ymbol Parameter onditions Max Units IN (Note 5) D I/O Pin apacitance V IN = 0 V 8 pf IN (Note 5) Input apacitance (other pins) V IN = 0 V 6 pf I WP, I (Note 6) WP Input urrent, ddress Input V IN < V IH, V = 5.5 V 75 urrent ( 0, 1, 2 ) V IN < V IH, V = 3.3 V 50 V IN < V IH, V = 1.8 V 25 V IN > V IH 2 5. hese parameters are tested initially and after a design or process change that affects the parameter according to appropriate E Q100 and JEDE test methods. 6. When not driven, the WP, 0, 1, 2 pins are pulled down to GND internally. For improved noise immunity, the internal pull down is relatively strong; therefore the external driver must be able to supply the pull down current when attempting to drive the input HIGH. o conserve power, as the input level exceeds the trip point of the MO input buffer (~ 0.5 x V ), the strong pull down reverts to a weak current source. 3

4 24512 able 5... HRERII (Note 7) V = 1.8 V to 5.5 V, = 40 to +85 and V = 2.5 V to 5.5 V, = 40 to +125, unless otherwise specified. ymbol Parameter tandard V = 1.8 V 5.5 V Fast V = 1.8 V 5.5 V Fast Plus V = 2.5 V 5.5 V = 40 to +85 Min Max Min Max Min Max F L lock Frequency ,000 khz t HD: R ondition Hold ime s t LOW Low Period of L lock s t HIGH High Period of L lock s t U: R ondition etup ime s t HD:D Data In Hold ime s t U:D Data In etup ime ns t R (Note 8) D and L Rise ime 1, ns t F (Note 8) D and L Fall ime ns t U:O OP ondition etup ime s t BUF Bus Free ime Between OP and R Units s t L Low to Data Out Valid s t DH Data Out Hold ime ns i (Note 8) Noise Pulse Filtered at L and D Inputs ns t U:WP WP etup ime s t HD:WP WP Hold ime s t WR Write ycle ime ms t PU (Notes 8, 9) Power-up to Ready Mode ms 7. est conditions according to.. est onditions table. 8. ested initially and after a design or process change that affects this parameter. 9. t PU is the delay between the time V is stable and the device is ready to accept commands. able 6... E ONDIION Input Levels Input Rise and Fall imes Input Reference Levels Output Reference Levels Output Load 0.2 x V to 0.8 x V 50 ns 0.3 x V, 0.7 x V 0.5 x V urrent ource: I L = 3 m (V 2.5 V); I L = 1 m (V < 2.5 V); L = 100 pf 4

5 24512 Power-On Reset (POR) he incorporates Power On Reset (POR) circuitry which protects the internal logic against powering up in the wrong state. he device will power up into tandby mode after V exceeds the POR trigger level and will power down into Reset mode when V drops below the POR trigger level. his bi directional POR behavior protects the device against brown out failure, following a temporary loss of power. Pin Description L: he erial lock input pin accepts the erial lock signal generated by the Master. D: he erial Data I/O pin receives input data and transmits data stored in EEPROM. In transmit mode, this pin is open drain. Data is acquired on the positive edge, and is delivered on the negative edge of L. 0, 1 and 2 : he ddress pins accept the device address. hese pins have on chip pull down resistors. WP: he Write Protect input pin inhibits all write operations, when pulled HIGH. his pin has an on chip pull down resistor. Functional Description he supports the Inter Integrated ircuit (I 2 ) Bus data transmission protocol, which defines a device that sends data to the bus as a transmitter and a device receiving data as a receiver. Data flow is controlled by a Master device, which generates the serial clock and all R and OP conditions. he acts as a lave device. Master and lave alternate as either transmitter or receiver. Up to 8 devices may be connected to the bus as determined by the device address inputs 0, 1, and 2. I 2 Bus Protocol he I 2 bus consists of two wires, L and D. he two wires are connected to the V supply via pull up resistors. Master and lave devices connect to the 2 wire bus via their respective L and D pins. he transmitting device pulls down the D line to transmit a 0 and releases it to transmit a 1. Data transfer may be initiated only when the bus is not busy (see.. haracteristics). During data transfer, the D line must remain stable while the L line is HIGH. n D transition while L is HIGH will be interpreted as a R or OP condition (Figure 2). R he R condition precedes all commands. It consists of a HIGH to LOW transition on D while L is HIGH. he R acts as a wake up call to all receivers. bsent a R, a lave will not respond to commands. OP he OP condition completes all commands. It consists of a LOW to HIGH transition on D while L is HIGH. he OP starts the internal Write cycle (when following a Write command) or sends the lave into standby mode (when following a Read command). Device ddressing he Master initiates data transfer by creating a R condition on the bus. he Master then broadcasts an 8 bit serial lave address. he first 4 bits of the lave address are set to 1010, for normal Read/Write operations (Figure 3). he next 3 bits, 2, 1 and 0, select one of 8 possible lave devices. he last bit, R/W, specifies whether a Read (1) or Write (0) operation is to be performed. cknowledge fter processing the lave address, the lave responds with an acknowledge () by pulling down the D line during the 9th clock cycle (Figure 4). he lave will also acknowledge the byte address and every data byte presented in Write mode. In Read mode the lave shifts out a data byte, and then releases the D line during the 9th clock cycle. If the Master acknowledges the data, then the lave continues transmitting. he Master terminates the session by not acknowledging the last data byte (No) and by sending a OP to the lave. Bus timing is illustrated in Figure

6 24512 L D R ONDIION Figure 2. tart/top iming OP ONDIION R/W DEVIE DDRE Figure 3. lave ddress Bits BU RELEE DELY (RNMIER) BU RELEE DELY (REEIVER) L FROM MER D OUPU FROM RNMIER D OUPU FROM REEIVER R DELY ( t ) Figure 4. cknowledge iming EUP ( t U:D ) t F t HIGH t R t LOW t LOW L t U: t HD: t HD:D t U:D t U:O D IN t t DH t BUF D OU Figure 5. Bus iming 6

7 24512 WRIE OPERION Byte Write In Byte Write mode the Master sends a R, followed by lave address, two byte address and data to be written (Figure 6). he lave acknowledges all 4 bytes, and the Master then follows up with a OP, which in turn starts the internal Write operation (Figure 7). During internal Write, the lave will not acknowledge any Read or Write request from the Master. Page Write he contains 65,536 bytes of data, arranged in 512 pages of 128 bytes each. two byte address word, following the lave address, points to the first byte to be written. he most significant 9 bits ( 15 to 7 ) identify the page and the last 7 bits identify the byte within the page. Up to 128 bytes can be written in one Write cycle (Figure 8). he internal byte address counter is automatically incremented after each data byte is loaded. If the Master transmits more than 128 data bytes, then earlier bytes will be overwritten by later bytes in a wrap around fashion (within the selected page). he internal Write cycle starts immediately following the OP. cknowledge Polling cknowledge polling can be used to determine if the is busy writing or is ready to accept commands. Polling is implemented by interrogating the device with a elective Read command (see RED OPERION). he will not acknowledge the lave address, as long as internal Write is in progress. Hardware Write Protection With the WP pin held HIGH, the entire memory is protected against Write operations. If the WP pin is left floating or is grounded, it has no impact on the operation of the he state of the WP pin is strobed on the last falling edge of L immediately preceding the first data byte (Figure 9). If the WP pin is HIGH during the strobe interval, the will not acknowledge the data byte and the Write request will be rejected. Delivery tate he is shipped erased, i.e., all bytes are FFh. 7

8 24512 BU IVIY: MER R LVE DDRE BYE DDRE D O P D LINE P Figure 6. Byte Write iming L D 8th Bit Byte n t WR OP ONDIION R ONDIION DDRE Figure 7. Write ycle iming BU IVIY: MER R LVE DDRE BYE DDRE D D n D n+127 O P D LINE P Figure 8. Page Write iming DDRE BYE D BYE L D a 7 a 0 d 7 d 0 t U:WP WP t HD:WP Figure 9. WP iming 8

9 24512 RED OPERION Immediate ddress Read In standby mode, the internal address counter points to the data byte immediately following the last byte accessed by a previous operation. If that previous byte was the last byte in memory, then the address counter will point to the 1st memory byte, etc. When, following a R, the is presented with a lave address containing a 1 in the R/W bit position (Figure 10), it will acknowledge () in the 9th clock cycle, and will then transmit data being pointed at by the internal address counter. he Master can stop further transmission by issuing a No, followed by a OP condition. elective Read he Read operation can also be started at an address different from the one stored in the internal address counter. he address counter can be initialized by performing a dummy Write operation (Figure 11). Here the R is followed by the lave address (with the R/W bit set to 0 ) and the desired two byte address. Instead of following up with data, the Master then issues a 2nd R, followed by the Immediate ddress Read sequence, as described earlier. equential Read If the Master acknowledges the 1st data byte transmitted by the 24512, then the device will continue transmitting as long as each data byte is acknowledged by the Master (Figure 12). If the end of memory is reached during sequential Read, then the address counter will wrap around to the beginning of memory, etc. equential Read works with either Immediate ddress Read or elective Read, the only difference being the starting byte address. BU IVIY: MER R LVE DDRE O P D LINE P D N O L 8 9 D 8th Bit D OU NO OP Figure 10. Immediate ddress Read iming BU IVIY: MER R LVE DDRE BYE DDRE R LVE DDRE D O P D LINE P Figure 11. elective Read iming N O BU IVIY: MER LVE DDRE D n D n+1 D n+2 D n+x O P D LINE P Figure 12. equential Read iming N O 9

10 24512 ORDERING INFORMION (Notes 10, 11) Device Order Number pecific Device Marking Package ype emperature Range Lead Finish hipping 24512WI G OI 8, JEDE 40 to +85 NiPdu ape & Reel, 3,000 Units / Reel 24512XI OI 8, EIJ 40 to +85 Matte in ape & Reel, 2,000 Units / Reel 24512YI G3 12 OP 8 40 to +85 NiPdu ape & Reel, 3,000 Units / Reel 24512HU5EG3 9L UDFN8 40 to +125 NiPdu ape & Reel, 3,000 Units / Reel 24512HU5IG3 9L UDFN8 40 to +85 NiPdu ape & Reel, 3,000 Units / Reel R 9 WLP 8 40 to +85 ngu ape & Reel, 5,000 Units / Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our ape and Reel Packaging pecifications Brochure, BRD8011/D. 10. ll packages are RoH-compliant (Lead-free, Halogen-free). 11. For detailed information and a breakdown of device nomenclature and numbering systems, please see the ON emiconductor Device Nomenclature document, ND310/D, availablse at ON emiconductor is licensed by the Philips orporation to carry the I 2 bus protocol. 10

11 MEHNIL E OULINE PGE DIMENION LE 4:1 PIN 1 REFERENE NOE 4 D ÍÍÍ ÍÍÍ OP VIEW DEIL 1 IDE VIEW B E EING PLNE UDFN8 3.0x2.0, 0.5P E 517BU 01 IUE O (0.127) DEIL (0.065) MILLIMEER DIM MIN MX b D 2.00 B D E 3.00 B E e 0.50 B L DE 06 PR 2011 NOE: 1. DIMENIONING ND OLERNING PER ME Y14.5M, ONROLLING DIMENION: MILLIMEER. 3. DIMENION b PPLIE O PLED ERMINL ND I MEURED BEWEEN 0.15 ND 0.25 MM FROM ERMINL IP. 4. OPLNRIY PPLIE O HE EXPOED PD WELL HE ERMINL. GENERI MRING DIGRM* 1 e D2 BOOM VIEW 8X L E2 8X b REOMMENDED MOUNING FOOPRIN M B 0.10 M B 0.10 M 0.05 M B D NOE 3 XXX LL YM XXX = pecific Device ode = ssembly Location ode LL = ssembly Lot Y = Year M = Month = Pb Free Package *his information is generic. Please refer to device data sheet for actual part marking. Pb Free indicator, G or microdot, may or may not be present. 8X PG OULINE PIH 8X 0.32 DIMENION: MILLIMEER DOUMEN NUMBER: U: NEW NDRD: emiconductor omponents Industries, LL, 2002 October, 2002 Rev. 0 DERIPION: 98ON55336E ON EMIONDUOR NDRD UDFN8 3.0 X 2.0, 0.5P 1 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped ONROLLED OPY in red. ase Outline Number: PGE 1 OF XXX 2

12 DOUMEN NUMBER: 98ON55336E PGE 2 OF 2 IUE REVIION DE O RELEED FOR PRODUION. REQ. BY V. RIUNOIU. 06 PR 2011 ON emiconductor and are registered trademarks of emiconductor omponents Industries, LL (ILL). ILL reserves the right to make changes without further notice to any products herein. ILL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ILL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ypical parameters which may be provided in ILL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including ypicals must be validated for each customer application by customer s technical experts. ILL does not convey any license under its patent rights nor the rights of others. ILL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the ILL product could create a situation where personal injury or death may occur. hould Buyer purchase or use ILL products for any such unintended or unauthorized application, Buyer shall indemnify and hold ILL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ILL was negligent regarding the design or manufacture of the part. ILL is an Equal Opportunity/ffirmative ction Employer. his literature is subject to all applicable copyright laws and is not for resale in any manner. emiconductor omponents Industries, LL, 2011 pril, 2011 Rev. 01O ase Outline Number: 517BU

13 MEHNIL E OULINE PGE DIMENION OI 8, 150 mils E 751BD 01 IUE O DE 19 DE 2008 YMBOL MIN NOM MX b E1 E c D E E e 1.27 B h PIN # 1 IDENIFIION L θ 0º 8º OP VIEW D h 1 θ c e b L IDE VIEW END VIEW Notes: (1) ll dimensions are in millimeters. ngles in degrees. (2) omplies with JEDE M-012. DOUMEN NUMBER: U: REFERENE: emiconductor omponents Industries, LL, 2002 October, 2002 Rev. 0 DERIPION: 98ON34272E ON EMIONDUOR NDRD OI 8, 150 MIL 1 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped ONROLLED OPY in red. ase Outline Number: PGE 1 OF XXX 2

14 DOUMEN NUMBER: 98ON34272E PGE 2 OF 2 IUE REVIION DE O RELEED FOR PRODUION FROM POD #OI O ON 19 DE 2008 EMIONDUOR. REQ. BY B. BERGMN. ON emiconductor and are registered trademarks of emiconductor omponents Industries, LL (ILL). ILL reserves the right to make changes without further notice to any products herein. ILL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ILL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ypical parameters which may be provided in ILL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including ypicals must be validated for each customer application by customer s technical experts. ILL does not convey any license under its patent rights nor the rights of others. ILL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the ILL product could create a situation where personal injury or death may occur. hould Buyer purchase or use ILL products for any such unintended or unauthorized application, Buyer shall indemnify and hold ILL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ILL was negligent regarding the design or manufacture of the part. ILL is an Equal Opportunity/ffirmative ction Employer. his literature is subject to all applicable copyright laws and is not for resale in any manner. emiconductor omponents Industries, LL, 2008 December, 2008 Rev. 01O ase Outline Number: 751BD

15 MEHNIL E OULINE PGE DIMENION OI 8, 208 mils E 751BE 01 IUE O DE 19 DE 2008 E1 E YMBOL MIN NOM MX 1 b c D E E e 1.27 B L θ 0º 8º PIN#1 IDENIFIION OP VIEW D e b 1 L c IDE VIEW END VIEW Notes: (1) ll dimensions are in millimeters. ngles in degrees. (2) omplies with EIJ EDR DOUMEN NUMBER: U: REFERENE: emiconductor omponents Industries, LL, 2002 October, 2002 Rev. 0 DERIPION: 98ON34273E ON EMIONDUOR NDRD OI 8, 208 MIL 1 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped ONROLLED OPY in red. ase Outline Number: PGE 1 OF XXX 2

16 DOUMEN NUMBER: 98ON34273E PGE 2 OF 2 IUE REVIION DE O RELEED FOR PRODUION FROM POD #OI O ON 19 DE 2008 EMIONDUOR. REQ. BY B. BERGMN. ON emiconductor and are registered trademarks of emiconductor omponents Industries, LL (ILL). ILL reserves the right to make changes without further notice to any products herein. ILL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ILL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ypical parameters which may be provided in ILL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including ypicals must be validated for each customer application by customer s technical experts. ILL does not convey any license under its patent rights nor the rights of others. ILL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the ILL product could create a situation where personal injury or death may occur. hould Buyer purchase or use ILL products for any such unintended or unauthorized application, Buyer shall indemnify and hold ILL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ILL was negligent regarding the design or manufacture of the part. ILL is an Equal Opportunity/ffirmative ction Employer. his literature is subject to all applicable copyright laws and is not for resale in any manner. emiconductor omponents Industries, LL, 2008 December, 2008 Rev. 01O ase Outline Number: 751BE

17 MEHNIL E OULINE PGE DIMENION OP8, 4.4x3 E 948L 01 IUE O DE 19 DE 2008 b YMBOL MIN NOM MX b E1 E c D E E e 0.65 B L 1.00 REF L1 θ º 8º e OP VIEW D 2 1 c IDE VIEW 1 L1 END VIEW L Notes: (1) ll dimensions are in millimeters. ngles in degrees. (2) omplies with JEDE MO-153. DOUMEN NUMBER: U: REFERENE: emiconductor omponents Industries, LL, 2002 October, 2002 Rev. 0 DERIPION: 98ON34428E ON EMIONDUOR NDRD OP8, 4.4X3 1 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped ONROLLED OPY in red. ase Outline Number: PGE 1 OF XXX 2

18 DOUMEN NUMBER: 98ON34428E PGE 2 OF 2 IUE REVIION DE O RELEED FOR PRODUION FROM POD #OP O ON 19 DE 2008 EMIONDUOR. REQ. BY B. BERGMN. ON emiconductor and are registered trademarks of emiconductor omponents Industries, LL (ILL). ILL reserves the right to make changes without further notice to any products herein. ILL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ILL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ypical parameters which may be provided in ILL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including ypicals must be validated for each customer application by customer s technical experts. ILL does not convey any license under its patent rights nor the rights of others. ILL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the ILL product could create a situation where personal injury or death may occur. hould Buyer purchase or use ILL products for any such unintended or unauthorized application, Buyer shall indemnify and hold ILL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ILL was negligent regarding the design or manufacture of the part. ILL is an Equal Opportunity/ffirmative ction Employer. his literature is subject to all applicable copyright laws and is not for resale in any manner. emiconductor omponents Industries, LL, 2008 December, 2008 Rev. 01O ase Outline Number: 948L

19 MEHNIL E OULINE PGE DIMENION LE 4:1 2X PIN 1 REFERENE 2X NOE X b 0.05 B 0.03 B E ÈÈ e/2 OP VIEW 1 IDE VIEW BOOM VIEW e 2 B D e1 WLP8, 1.39x1.65 E 567JL IUE B EING PLNE DE 06 MY 2015 NOE: 1. DIMENIONING ND OLERNING PER ME Y14.5M, ONROLLING DIMENION: MILLIMEER. 3. OPLNRIY PPLIE O HE PHERIL ROWN OF HE OLDER BLL. 4. DUM, HE EING PLNE, I DEFINED BY HE PHERIL ROWN OF HE OL- DER BLL. 5. DIMENION b I MEURED HE MXIMUM OLDER BLL DIMEER PRLLEL O D- UM. MILLIMEER DIM MIN MX REF b D 1.39 B E 1.65 B e 0.50 B e B GENERI MRING DIGRM* XXX YW XXX = pecific Device ode = ssembly Location Y = Year W = Work Week *his information is generic. Please refer to device data sheet for actual part marking. Pb Free indicator, G or microdot, may or may not be present. REOMMENDED OLDERING FOOPRIN* PIH PIH PGE OULINE 0.25 PIH 8X 0.27 DIMENION: MILLIMEER *For additional information on our Pb Free strategy and soldering details, please download the ON emiconductor oldering and Mounting echniques Reference Manual, OLDERRM/D. DOUMEN NUMBER: U: REFERENE: emiconductor omponents Industries, LL, 2002 October, 2002 Rev. 0 DERIPION: 98ON80360F ON EMIONDUOR NDRD WLP8, 1.39X Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped ONROLLED OPY in red. ase Outline Number: PGE 1 OF XXX 2

20 DOUMEN NUMBER: 98ON80360F PGE 2 OF 2 IUE REVIION DE O RELEED FOR PRODUION. REQ. BY V. RIUNOIU 03 JN 2014 HNGED PGE DIMENION FROM 1.38X1.64 O 1.39X1.65X0.60. REQ. BY E. IONEU. 10 PR 2015 B ORREED MRING DIGRM ODE INFORMION. REQ. BY E. IONEU. 06 MY 2015 ON emiconductor and are registered trademarks of emiconductor omponents Industries, LL (ILL). ILL reserves the right to make changes without further notice to any products herein. ILL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ILL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ypical parameters which may be provided in ILL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including ypicals must be validated for each customer application by customer s technical experts. ILL does not convey any license under its patent rights nor the rights of others. ILL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the ILL product could create a situation where personal injury or death may occur. hould Buyer purchase or use ILL products for any such unintended or unauthorized application, Buyer shall indemnify and hold ILL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ILL was negligent regarding the design or manufacture of the part. ILL is an Equal Opportunity/ffirmative ction Employer. his literature is subject to all applicable copyright laws and is not for resale in any manner. emiconductor omponents Industries, LL, 2015 May, 2015 Rev. B ase Outline Number: 567JL

21 ON emiconductor and are trademarks of emiconductor omponents Industries, LL dba ON emiconductor or its subsidiaries in the United tates and/or other countries. ON emiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. listing of ON emiconductor s product/patent coverage may be accessed at Marking.pdf. ON emiconductor reserves the right to make changes without further notice to any products herein. ON emiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON emiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON emiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON emiconductor. ypical parameters which may be provided in ON emiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including ypicals must be validated for each customer application by customer s technical experts. ON emiconductor does not convey any license under its patent rights nor the rights of others. ON emiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FD lass 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. hould Buyer purchase or use ON emiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON emiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON emiconductor was negligent regarding the design or manufacture of the part. ON emiconductor is an Equal Opportunity/ffirmative ction Employer. his literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLIION ORDERING INFORMION LIERURE FULFILLMEN: Literature Distribution enter for ON emiconductor E. 32nd Pkwy, urora, olorado U Phone: or oll Free U/anada Fax: or oll Free U/anada orderlit@onsemi.com N. merican echnical upport: oll Free U/anada Europe, Middle East and frica echnical upport: Phone: ON emiconductor Website: Order Literature: For additional information, please contact your local ales Representative

CAV24C32. EEPROM Serial 32-Kb I 2 C - Automotive Grade 1

CAV24C32. EEPROM Serial 32-Kb I 2 C - Automotive Grade 1 V2432 EEPROM erial 32-b I 2 - utomotive Grade 1 Description he V2432 is a EEPROM erial 32 b I 2 devices, internally organized as 4096 words of 8 bits each. It features a 32 byte page write buffer and supports

More information

CAT24C32. EEPROM Serial 32-Kb I 2 C

CAT24C32. EEPROM Serial 32-Kb I 2 C 2432 EEPROM erial 32-b I 2 Description he 2432 is a EEPROM erial 32 b I 2 devices, internally organized as 4096 words of 8 bits each. It features a 32 byte page write buffer and supports the tandard (100

More information

CAV24C512. EEPROM Serial 512-Kb I 2 C - Automotive Grade 1

CAV24C512. EEPROM Serial 512-Kb I 2 C - Automotive Grade 1 V24512 EEROM erial 512-b I 2 - utomotive Grade 1 Description he V24512 is a EEROM erial 512 b I 2, internally organized as 65,536 words of 8 bits each. It features a 128 byte page write buffer and supports

More information

FSV10120V. Ultra-Low VF Schottky Rectifier, 10 A, 120 V

FSV10120V. Ultra-Low VF Schottky Rectifier, 10 A, 120 V Ultra-Low V chottky Rectifier, 10 A, 120 V eatures Ultra Low orward Voltage Drop Low Thermal Resistance Very Low Profile: Typical Height of 1.1 mm Trench chottky Technology Green Molding Compound as per

More information

FS8G - FS8M. 8 A Standard Recovery Surface Mount Rectifiers

FS8G - FS8M. 8 A Standard Recovery Surface Mount Rectifiers 8G - 8M 8 A tandard Recovery urface Mount Rectifiers Description The 8G to 8M series offers breakthrough size and performance. It sinks 8 A DC forward current and provides up to 20 A surge current capability

More information

NSVP249SDSF3. PIN Diode Dual series PIN Diode for VHF, UHF and AGC

NSVP249SDSF3. PIN Diode Dual series PIN Diode for VHF, UHF and AGC NSVP49SDSF PIN Diode Dual series PIN Diode for VHF, UHF and AGC This PIN diode is designed to realize compact and efficient designs. Two PIN diodes are incorporated in one SC 0 package. The use of dual

More information

Is Now Part of. To learn more about ON Semiconductor, please visit our website at

Is Now Part of. To learn more about ON Semiconductor, please visit our website at Is Now Part of To learn more about ON emiconductor, please visit our website at www.onsemi.com Please note: As part of the airchild emiconductor integration, some of the airchild orderable part numbers

More information

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at Is Now Part of To learn more about ON emiconductor, please visit our website at www.onsemi.com ON emiconductor and the ON emiconductor logo are trademarks of emiconductor Components Industries, LLC dba

More information

FFH60UP60S, FFH60UP60S3. 60 A, 600 V Ultrafast Rectifier

FFH60UP60S, FFH60UP60S3. 60 A, 600 V Ultrafast Rectifier FFH60UP60S, FFH60UP60S3 60 A, 600 V Ultrafast Rectifier Description The FFH60UP60S, FFH60UP60S3 is an ultrafast diode with low forward voltage drop and rugged UIS capability. This device is intended for

More information

Is Now Part of. To learn more about ON Semiconductor, please visit our website at

Is Now Part of. To learn more about ON Semiconductor, please visit our website at Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers

More information

UD0506T-TL-H. Planar Ultrafast Rectifier Low VF type, 5A, 600V, 1.3V, TP/TP-FA. Features. Specifications

UD0506T-TL-H. Planar Ultrafast Rectifier Low VF type, 5A, 600V, 1.3V, TP/TP-FA. Features. Specifications Ordering number : ENA10A UD006T Planar Ultrafast Rectifier Low VF type, A, 600V, 1.V, TP/TP-FA http://onsemi.com Features High breakdown voltage (VRRM=600V) Low noise at the time of reverse recovery Halogen

More information

Schottky Barrier Diode Dual Series Schottky Barrier Diode for Mixer and Detector 5V, 30mA, 0.69pF, CP

Schottky Barrier Diode Dual Series Schottky Barrier Diode for Mixer and Detector 5V, 30mA, 0.69pF, CP Ordering number : EN40C 1SS1 Schottky Barrier Diode Dual Series Schottky Barrier Diode for Mixer and Detector V, 0mA, 0.69pF, CP http://onsemi.com Features Series connection of elements in a small-sized

More information

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at Is Now Part of To learn more about ON Semiconductor, please visit our website at ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor

More information

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC

More information

TIP42 / TIP42C PNP Epitaxial Silicon Transistor

TIP42 / TIP42C PNP Epitaxial Silicon Transistor TIP42 / TIP42C PNP Epitaxial Silicon Transistor Features Medium Power Linear Switching Applications Complement to TIP41 Series Ordering Information 1 TO-220 1.Base 2.Collector 3.Emitter Part Number Top

More information

OBSOLETE. Features. Mechanical Data PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR

OBSOLETE. Features. Mechanical Data PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR PNP PRE-BIASED SMALL SIGNAL SURFAE MOUNT TRANSISTOR Obsolete Part Number Alternative Part Number DDTA4EA DDTA5EA DDTA3EA DDTA4EA DDTA43EA DDTA44EA Features Epitaxial Planar Die onstruction omplementary

More information

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC

More information

SOT23 3. Part Number Compliance Marking Reel Size(inches) Tape Width(mm) Quantity Per Reel DESDA5V3LQ-7 Automotive RD ,000/Tape & Reel

SOT23 3. Part Number Compliance Marking Reel Size(inches) Tape Width(mm) Quantity Per Reel DESDA5V3LQ-7 Automotive RD ,000/Tape & Reel YM YW 5V3Q F M V Y roduct ummary V BMin) Max) Max) 5.3V 2 22pF escription his new generation V is designed to protect sensitive electronics from the damage due to. he combination of small size and high

More information

Case Material: Molded Plastic. UL Flammability Classification Low Reverse Leakage Current

Case Material: Molded Plastic. UL Flammability Classification Low Reverse Leakage Current Pb 4A GLASS PASSIVATED BRIDGE RECTIFIER Features Mechanical Data Glass Passivated Die Construction Case: Rating to 1,000V PRV Case Material: Molded Plastic. UL Flammability Classification Low Reverse Leakage

More information

Top View BAS70WQ BAS70W-04Q BAS70W-05Q BAS70W-06Q

Top View BAS70WQ BAS70W-04Q BAS70W-05Q BAS70W-06Q SUC MOU SCHOKY BI DIOD Product Summary V M (V) I O (m) V (MX) @ 1m (V) I (MX) @ V = 50V (μ) 70 70 0.41 0.1 pplications SMPS DC-DC Converter reewheeling Diodes everse Polarity Protection Blocking Diodes

More information

BLF7G20L-160P; BLF7G20LS-160P

BLF7G20L-160P; BLF7G20LS-160P BLF7G20L-160P; BLF7G20LS-160P Rev. 01 22 June 2010 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz

More information

SELECTABLE GTL VOLTAGE REFERENCE

SELECTABLE GTL VOLTAGE REFERENCE 1 SN74GTL3004 www.ti.com... SCBS873A FEBRUARY 2008 REVISED APRIL 2008 SELECTABLE GTL VOLTAGE REFERENCE 1FEATURES V DD Range: 3.0 V to 3.6 V V TT Range: 1 V to 1.3 V Provides Selectable GTL V REF 0.615

More information

Low Profile, High Current IHLP Inductors

Low Profile, High Current IHLP Inductors Low Profile, High Current IHLP Inductors IHLP-6767GZ-1 Manufactured under one or more of the following: US Patents; 6,198,375/6,4,744/6,449,829/6,4,244. Several foreign patents, and other patents pending.

More information

Low Profile, High Current IHLP Inductors

Low Profile, High Current IHLP Inductors ow Profile, High Current IHP Inductors IHP-55FD-1 Manufactured under one or more of the following: US Patents;,198,375/,,7/,9,89/,,. Several foreign patents, and other patents pending. STANDARD EECTRICA

More information

Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology,

More information

SYMBOL TYPE NUMBER VALUE UNIT. Power dissipation at Tamb = 60 ºC 1.5 W. Non repetitive peak zener dissipation (t = 10ms) 40 W

SYMBOL TYPE NUMBER VALUE UNIT. Power dissipation at Tamb = 60 ºC 1.5 W. Non repetitive peak zener dissipation (t = 10ms) 40 W DO-204AL (DO-41) Voltage Power Dissipation 10 to 200 V 1.5 W Maximum Ratings and Electrical Characteristics at 25 C FEATURE Glass passivated chip junction Hiperectifier structure for high reliability Cavity-free

More information

High Speed Optocoupler, 5 MBd

High Speed Optocoupler, 5 MBd High Speed Optocoupler, 5 MBd Vishay Semiconductors DESCRIPTION This 5 MBd family is an industry standard optocoupler with a high efficient LED as input and an integrated photo detector as output. The

More information

BAT54 series 1. Product profile 2. Pinning information Schottky barrier diodes 1.1 General description 1.2 Features and benefits

BAT54 series 1. Product profile 2. Pinning information Schottky barrier diodes 1.1 General description 1.2 Features and benefits SOT2 Rev. 5 5 October 2012 1. Product profile 1.1 General description Planar with an integrated guard ring for stress protection, encapsulated in a small SOT2 (TO-26AB) Surface-Mounted Device (SMD) plastic

More information

The interface is designed to translate paging commands from a host computer to signals understood

The interface is designed to translate paging commands from a host computer to signals understood USB P/N: A91A8 RoHS MODEL: 48A -9-1800 EIA 363 0635 S MADE IN CHINA T74USB USB Paging System Transmitter Interface QUICK SETUP & OPERATION Interface Description The interface is designed to translate paging

More information

SN74F08 QUADRUPLE 2-INPUT POSITIVE-AND GATE

SN74F08 QUADRUPLE 2-INPUT POSITIVE-AND GATE SN74F08 QUADRUPLE 2-INPUT POSITIVE-AND GATE SDFS038A D2932, MARCH 1987 REVISED OCTOBER 1993 Package Options Include Plastic Small-Outline Packages and Standard Plastic 300-mil DIPs description The SN74F08

More information

BAS70-00-V to BAS70-06-V

BAS70-00-V to BAS70-06-V Small Signal Schottky Diodes, Single & Dual Features These diodes feature very low turn-on voltage and fast switching These devices are protected by a PN junction guard ring against excessive voltage,

More information

145 V PTC Thermistors For Overload Protection

145 V PTC Thermistors For Overload Protection FEATURES Wide range of trip and non-trip currents: From 47 ma up to A for the non-trip current Small ratio between trip and non-trip currents (I t /I nt =.5 at 25 C) High maximum inrush current (up to

More information

U S E R M A N UA L. Installation, Warranty and Service Information

U S E R M A N UA L. Installation, Warranty and Service Information T74USB Paging System Transmitter U S E R M A N UA L Transmit Receive Power 9VAC T74USB FCC ID: M74T7400 800.437.4996 www.pager.net USB www.pager.net Installation, Warranty and Service Information Long

More information

PACKAGE OPTION ADDENDUM www.ti.com 25-May-2018 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan UC2638DW NRND SOIC DW 20 25 Green (RoHS UC2638DWG4

More information

To request a full data sheet, please send an to:

To request a full data sheet, please send an  to: To request a full data sheet, please send an email to: display_contact@list.ti.com. PACKAGE OPTION ADDENDUM 11-Apr-2013 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins

More information

DS9638 RS-422 Dual High Speed Differential Line Driver

DS9638 RS-422 Dual High Speed Differential Line Driver 1 www.ti.com SNLS389D MAY 1998 REVISED APRIL 2013 RS-422 Dual High Speed Differential Line Driver Check for Samples: 1FEATURES DESCRIPTION 2 Single 5V Supply The is a Schottky, TTL compatible, dual differential

More information

For a detailed datasheet and other design support tools, please contact

For a detailed datasheet and other design support tools, please contact This device is designed specifically to power Intel processors under a strict disclosure agreement with Intel Corporation. The end user must have a current CNDA in place with Intel Corporation to access

More information

SERIES 2000 STICK ANTENNA

SERIES 2000 STICK ANTENNA Not Recommended for New designs RI-ANT-S01C, RI-ANT-S02C SERIES 2000 STICK ANTENNA SCBS851 DECEMBER 2002 REVISED DECEMBER 2005 FEATURES Best in Class Performance Through Patented HDX Technology IP 64+

More information

Insertion loss (db) TOP VIEW SIDE VIEW BOTTOM VIEW. 4x ± ± Orientation Marker Denotes Pin Location 4x 0.

Insertion loss (db) TOP VIEW SIDE VIEW BOTTOM VIEW. 4x ± ± Orientation Marker Denotes Pin Location 4x 0. Model DC4759J52AHF Ultra Low Profile 85 2dB Directional Coupler Description The DC4759J52AHF is a low cost, low profile sub-miniature high performance 2 db directional coupler in an easy to use RoH compliant,

More information

PACKAGE OPTION ADDENDUM www.ti.com 17-Mar-2017 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan UC2906DW NRND SOIC DW 16 40 Green (RoHS UC2906DWG4

More information

Lower Voltage Ceramic Disc Capacitors 2 kv DC to 7.5 kv DC

Lower Voltage Ceramic Disc Capacitors 2 kv DC to 7.5 kv DC Lower Voltage eramic isc apacitors 2 kv to 7.5 kv 564R and 565R Series Fig. 1 max. LEA OFFSE 'LO' NOMINAL ~ HIKNESS - 0." EXEPION 1.250" min. (32 mm) inned opper Leads INSULAION RESISANE 2 kv min. 10 000

More information

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC

More information

PACKAGE OPTION ADDENDUM

PACKAGE OPTION ADDENDUM PACKAGE OPTION ADDENDUM www.ti.com 24-Aug-2018 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish (6) MSL Peak Temp (3) Op Temp

More information

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC

More information

Commercial Thin Film Resistor, Surface Mount Chip

Commercial Thin Film Resistor, Surface Mount Chip P-NS Commercial Thin Film Resistor, Surface Mount Chip For applications requiring low noise, stability, low temperature coefficient of resistance, and low voltage coefficient, all Vishay s proven precision

More information

Ultrafast epitaxial rectifier diode in a SOT226 (I2PAK) plastic package. Discontinuous Current Mode (DCM) Power Factor Correction (PFC)

Ultrafast epitaxial rectifier diode in a SOT226 (I2PAK) plastic package. Discontinuous Current Mode (DCM) Power Factor Correction (PFC) Rev. 01 4 February 2010 Product data sheet 1. Product profile 1.1 General description Ultrafast epitaxial rectifier diode in a SOT226 (I2PAK) plastic package 1.2 Features and benefits Fast switching High

More information

ZXBM1017 OBSOLETE PART DISCONTINUED PART OBSOLETE - USE ZXBM1021 VARIABLE SPEED SINGLE- PHASE BLDC MOTOR CONTROLLER ZXBM of 10

ZXBM1017 OBSOLETE PART DISCONTINUED PART OBSOLETE - USE ZXBM1021 VARIABLE SPEED SINGLE- PHASE BLDC MOTOR CONTROLLER ZXBM of 10 VARIABLE SPEED SINGLE- PHASE BLDC MOTOR CONTROLLER 1 of 10 2 of 10 3 of 10 4 of 10 5 of 10 6 of 10 7 of 10 8 of 10 9 of 10 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR

More information

SAW FILTER FOR RKE Murata part number :SAFBC315MSP0T00

SAW FILTER FOR RKE Murata part number :SAFBC315MSP0T00 AUTOMOTIVE SAW FILTER FOR RKE Package Dimensions Top View Specification Item Nominal Center Frequency(fc) Specification -4 to +125 C typ. 315. MHz Dot Marking(φ.5) Bottom View (.1) 3.±.2 Q N (3) (4) (1).75±.2

More information

... OUTPUT VOLTAGE RANGE, ALL OUTPUTS

... OUTPUT VOLTAGE RANGE, ALL OUTPUTS Data sheet acquired from Harris Semiconductor SCHS099B Revised January 2003 The CD40109, unlike other low-to-high level-shifting circuits, does not require the presence of the high-voltage supply (V DD

More information

PACKAGE OPTION ADDENDUM

PACKAGE OPTION ADDENDUM PACKAGE OPTION ADDENDUM www.ti.com 15-Apr-2017 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish (6) MSL Peak Temp (3) Op Temp

More information

Data sheet acquired from Harris Semiconductor SCHS072B Revised July 2003

Data sheet acquired from Harris Semiconductor SCHS072B Revised July 2003 Data sheet acquired from Harris Semiconductor SCHS072B Revised July 2003 Lamp Test (LT), Blanking (BL), and Latch Enable or Strobe inputs are provided to test the display, shut off or intensity-modulate

More information

Not Recommended for New Design

Not Recommended for New Design "Spansion, Inc." and "Cypress Semiconductor Corp." have merged together to deliver high-performance, high-quality solutions at the heart of today's most advanced embedded systems, from automotive, industrial

More information

PMP4466 Test Results 1. INPUT CHARACTERISTICS 2. OUTPUT CHARACTERISTICS. Test Report. 1.1 Standby Power Vin (Vac) Pin (mw)

PMP4466 Test Results 1. INPUT CHARACTERISTICS 2. OUTPUT CHARACTERISTICS. Test Report. 1.1 Standby Power Vin (Vac) Pin (mw) Test Report April 2016 PMP4466 Test Results 1. INPUT CHARACTERISTICS 1.1 Standby Power Vin (Vac) Pin (mw) 90 15 115 16 230 25 264 27 1.2 EFFICIENCY DATA and Curve Note: Efficiency is tested on USB end

More information

VHF variable capacitance diode

VHF variable capacitance diode Rev. 4 6 September 2011 Product data sheet 1. Product profile 1.1 General description The is a variable capacitance diode, fabricated in planar technology and encapsulated in the SOD323 (SC-76) very small

More information

PACKAGE OPTION ADDENDUM

PACKAGE OPTION ADDENDUM PACKAGE OPTION ADDENDUM www.ti.com 15-Apr-2017 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan SN74LS19ADR ACTIVE SOIC D 14 2500 Green (RoHS & no

More information

Cranking Simulator for Automotive Applications

Cranking Simulator for Automotive Applications 2/13/2013 Matthias Ulmann Cranking Simulator for Automotive Applications Input 24V DC Output Adjustable by Microcontroller between 2..15V @ 50W 3 Cranking Pulses programmed: - DaimlerChrysler Engine Cranking

More information

[Type text] PMP6007 TPS Vac Non Dimmable 10W LED Driver Reference Design

[Type text] PMP6007 TPS Vac Non Dimmable 10W LED Driver Reference Design [Type text] PMP6007 TPS92074 230Vac Non Dimmable 10W LED Driver Reference Design October, 2013 230Vac Non Dimmable 10W LED Driver Reference Design 1 Introduction This TPS92074 reference design presents

More information

SN54LS266, SN74LS266 QUADRUPLE 2-INPUT EXCLUSIVE-NOR GATES WITH OPEN-COLLECTOR OUTPUTS

SN54LS266, SN74LS266 QUADRUPLE 2-INPUT EXCLUSIVE-NOR GATES WITH OPEN-COLLECTOR OUTPUTS SN54LS266, SN74LS266 QUADRUPLE 2-INPUT EXCLUSIVE-NOR GATES WITH OPEN-COLLECTOR OUTPUTS SDLS151 DECEMBER 1972 REVISED MARCH 1988 PRODUCTION DATA information is current as of publication date. Products conform

More information

PACKAGE OPTION ADDENDUM www.ti.com 24-Aug-2018 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan UCC2807D-1 ACTIVE SOIC D 8 75 Green (RoHS UCC2807D-2

More information

PMBFJ111; PMBFJ112; PMBFJ113

PMBFJ111; PMBFJ112; PMBFJ113 SOT23 PMBFJ111; PMBFJ112; PMBFJ113 Rev. 4 20 September 2011 Product data sheet 1. Product profile 1.1 General description Symmetrical in a SOT23 package. 1.2 Features and benefits High-speed switching

More information

Data sheet acquired from Harris Semiconductor SCHS068C Revised October 2003

Data sheet acquired from Harris Semiconductor SCHS068C Revised October 2003 Data sheet acquired from Harris Semiconductor SCHS068C Revised October 2003 CD4503B is a hex noninverting buffer with 3-state outputs having high sink- and source-current capability. Two disable controls

More information

PACKAGE OPTION ADDENDUM

PACKAGE OPTION ADDENDUM PACKAGE OPTION ADDENDUM www.ti.com 17-Mar-2017 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish (6) MSL Peak Temp (3) Op Temp

More information

Low Profile, High Current IHLP Inductors

Low Profile, High Current IHLP Inductors ow Profile, High Current IHP Inductors Manufactured under one or more of the following: US Patents; 6,198,375/6,4,744/6,449,829/6,4,244. Several foreign patents, and other patents pending. STANDARD EECTRICA

More information

50 V, 3 A PNP low VCEsat (BISS) transistor

50 V, 3 A PNP low VCEsat (BISS) transistor Rev. 6 28 June 2011 Product data sheet 1. Product profile 1.1 General description PNP low V CEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic

More information

SN54HCT08, SN74HCT08 QUADRUPLE 2-INPUT POSITIVE-AND GATES

SN54HCT08, SN74HCT08 QUADRUPLE 2-INPUT POSITIVE-AND GATES SN54HCT08, SN74HCT08 QUADRUPLE 2-INPUT POSITIVE-AND GATES SCLS063D NOVEMBER 1988 REVISED AUIGUST 2003 Operating Voltage Range of 4.5 V to 5.5 V Outputs Can Drive Up To 10 LSTTL Loads Low Power Consumption,

More information

SN54LS181, SN54S181 SN74LS181, SN74S181 ARITHMETIC LOGIC UNITS/FUNCTION GENERATORS

SN54LS181, SN54S181 SN74LS181, SN74S181 ARITHMETIC LOGIC UNITS/FUNCTION GENERATORS PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include

More information

QM35. Cover. Output. A = Line Driver B = Line Driver (ABZ) /Open Collector (UVW) C = Dual Votage Line Driver (ABZ)/ Open Collector (UVW)

QM35. Cover. Output. A = Line Driver B = Line Driver (ABZ) /Open Collector (UVW) C = Dual Votage Line Driver (ABZ)/ Open Collector (UVW) QM35 DESIGN FEATURES Bearingless modular design Low profile assembled height Resolutions up to 8192 lines per revolution 4, 6, 8 or 10 pole commutation Easy lock-n-twist assembly feature Through shaft

More information

Data sheet acquired from Harris Semiconductor SCHS049C Revised October 2003

Data sheet acquired from Harris Semiconductor SCHS049C Revised October 2003 Data sheet acquired from Harris Semiconductor SCHS049C Revised October 2003 CD4060B consists of an oscillator section and 14 ripple-carry binary counter stages. The oscillator configuration allows design

More information

IHLP-2525CZ-8A 22 μh ± 20 % ER e3 MODEL INDUCTANCE VALUE INDUCTANCE TOLERANCE PACKAGE CODE JEDEC LEAD (Pb)-FREE STANDARD MODEL SIZE PACKAGE CODE

IHLP-2525CZ-8A 22 μh ± 20 % ER e3 MODEL INDUCTANCE VALUE INDUCTANCE TOLERANCE PACKAGE CODE JEDEC LEAD (Pb)-FREE STANDARD MODEL SIZE PACKAGE CODE IHP Automotive Inductors, High Temperature ( C) Series DESIGN SUPPORT TOOS click logo to get started Design Tools Available STANDARD EECTRICA SPECIFICATIONS INDUCTANCE ± % AT khz, V, A (μh) DCR TYP. C

More information

BLANTONE MUSIC CD DUPLICATION ORDER FORM

BLANTONE MUSIC CD DUPLICATION ORDER FORM BLANTONE MUSIC CD DUPLICATION ORDER FORM Intellectual Property Rights Protection Policy Blantone Music reserves the right, at its sole discretion, to investigate the ownership of any and all materials

More information

High Stability - High Temperature (230 C) Thin Film Wraparound Chip Resistors

High Stability - High Temperature (230 C) Thin Film Wraparound Chip Resistors High Stability - High Temperature (230 C) Thin Film Wraparound Chip Resistors INTRODUCTION For applications such as down hole applications, the need for parts able to withstand very severe conditions (temperature

More information

Low Profile, High Current IHLP Inductors

Low Profile, High Current IHLP Inductors IHP-BZ-11 ow Profile, High Current IHP Inductors Manufactured under one or more of the following: US Patents; 6,19,375/6,,7/6,9,9/6,,. Several foreign patents, and other patents pending. STANDARD EECTRICA

More information

Data sheet acquired from Harris Semiconductor SCHS052B Revised June 2003

Data sheet acquired from Harris Semiconductor SCHS052B Revised June 2003 Data sheet acquired from Harris Semiconductor SCHS052B Revised June 2003 The CD4067B and CD4097B types are supplied in 24-lead hermetic dual-in-line ceramic packages (F3A suffix), 24-lead dual-in-line

More information

SN54107, SN54LS107A, SN74107, SN74LS107A DUAL J-K FLIP-FLOPS WITH CLEAR

SN54107, SN54LS107A, SN74107, SN74LS107A DUAL J-K FLIP-FLOPS WITH CLEAR SN54107, SN54LS107A, SN74107, SN74LS107A DUAL J-K FLIP-FLOPS WITH CLEAR SDLS036 DECEMBER 1983 REVISED MARCH 1988 PRODUCTION DATA information is current as of publication date. Products conform to specifications

More information

PACKAGE OPTION ADDENDUM

PACKAGE OPTION ADDENDUM PACKAGE OPTION ADDENDUM www.ti.com 24-Aug-2018 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish (6) MSL Peak Temp (3) Op Temp

More information

For a detailed datasheet and other design support tools please contact

For a detailed datasheet and other design support tools please contact For a detailed datasheet and other design support tools please contact IMVP@list.ti.com PACKAGE OPTION ADDENDUM www.ti.com 15-Jan-2016 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package

More information

Data sheet acquired from Harris Semiconductor SCHS106B Revised July 2003

Data sheet acquired from Harris Semiconductor SCHS106B Revised July 2003 Data sheet acquired from Harris Semiconductor SCHS106B Revised July 2003 The CD40192B and CD40193B types are supplied in 16-lead hermetic dual-in-line ceramic packages (F3A suffix), 16-lead dual-in-line

More information

DISCRETE SEMICONDUCTORS DATA SHEET

DISCRETE SEMICONDUCTORS DATA SHEET DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGY687 600 MHz, 21.5 db gain push-pull amplifier Supersedes data of 1995 Sep 11 2001 Nov 08 FEATURES Excellent linearity Extremely low noise Silicon

More information

Data sheet acquired from Harris Semiconductor SCHS071B Revised July 2003

Data sheet acquired from Harris Semiconductor SCHS071B Revised July 2003 Data sheet acquired from Harris Semiconductor SCHS071B Revised July 2003 The CD4510B and CD4516B types are supplied in 16-lead dual-in-line plastic packages (E suffix), 16-lead small-outline packages (NSR

More information

SOURCE CONTROL DRAWING OFFICIAL SPECIFICATION

SOURCE CONTROL DRAWING OFFICIAL SPECIFICATION SOURCE CONTROL DRAWING OFFICIAL SPECIFICATION Item : 5.0X3.2X1.1mm CERAMIC MINIATURE CERAMIC SMD CRYSTAL EMBER CORP P/N 565-2400-000 ABRACON P/N : ABM3B-24.000MHZ-R60-D1W-T Approved by: Date : Customer's

More information

B. Document source: Risk assessment by: Organization: Date: SIF specification issued by: Organization: Date:

B. Document source: Risk assessment by: Organization: Date: SIF specification issued by: Organization: Date: This form is one of the results of the research project SafeProd supported by VINNOVA (Swedish Agency for Innovation Systems). More information about the project could be found at. Page 1 A. Document issued

More information

Power dissipation comparable to SOT23 Package height typ mm AEC-Q101 qualified

Power dissipation comparable to SOT23 Package height typ mm AEC-Q101 qualified Rev. 1 12 October 2017 Preliminary data sheet 1 Product profile 1.1 General description General-purpose Zener diode, encapsulated in an SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic

More information

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK mw

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK mw TOSHIBA Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications Unit: mm Two devices in a ultra super mini (five pins) package High Y fs : Y fs = 15 ms (typ.)

More information

Reinforced Winding Wirewound Power Resistor

Reinforced Winding Wirewound Power Resistor Reinforced Winding Wirewound Power Resistor FEATURES Very high dissipation High energy absorption and high overloads Suitable for the most severe conditions Material categorization: for definitions of

More information

PACKAGE OPTION ADDENDUM www.ti.com 5-Jan-2018 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish (6) MSL Peak Temp (3) Op Temp

More information

Data sheet acquired from Harris Semiconductor SCHS034C Revised October 2003

Data sheet acquired from Harris Semiconductor SCHS034C Revised October 2003 Data sheet acquired from Harris Semiconductor SCHS034C Revised October 2003 The CD4029B-series types are supplied in 16-lead hermetic dual-in-line ceramic packages (F3A suffix), 16-lead dual-in-line plastic

More information

SOT-23 Single Op Amp Evaluation Board User Guide UG-838

SOT-23 Single Op Amp Evaluation Board User Guide UG-838 SOT-23 Single Op Amp Evaluation Board User Guide One Technology Way P.O. Box 9106 Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 Fax: 781.461.3113 www.analog.com Evaluation Board for Single, High Speed

More information

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T a = 25 ) Symbol. Note. V RM V R I FM I O P D I FSM T j T stg

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T a = 25 ) Symbol. Note. V RM V R I FM I O P D I FSM T j T stg Switching Diodes 1SS302A Silicon Epitaxial Planar 1SS302A 1. Applications Ultra-High-Speed Switching 2. Features (1) Fast reverse recovery time : t rr = 1.6 ns (typ.) (2) AEC-Q101 qualified 3. Packaging

More information

SAFETY COMMAND DEVICES

SAFETY COMMAND DEVICES AFY COMMAND DVIC 00 -top ope witch he 00 -top ope witch series is used with preference with expansive points of operation. Its simple operation ensures fast stop command output along the point of operation.

More information

± 0.2 ppm/ C ± 3 ppm/ C. ± 2.0 ppm/ C

± 0.2 ppm/ C ± 3 ppm/ C. ± 2.0 ppm/ C Models # 303119Z and 303119 (Current Sensing Fixed Foil Resistor Chips VCS1625Z/VCS1625 Configuration) Screen/Test Flow in Compliance with EEE-INST-002, (Tables 2A and 3A, Film/Foil, Level 1) and MIL-PRF-55342

More information

SC-70 Evaluation Board User Guide UG-112

SC-70 Evaluation Board User Guide UG-112 SC-70 Evaluation Board User Guide UG-112 One Technology Way P.O. Box 9106 Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 Fax: 781.461.3113 www.analog.com Evaluation Board for Single, High Speed Op Amps

More information

PACKAGE OPTION ADDENDUM www.ti.com 24-Aug-2018 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish (6) MSL Peak Temp (3) Op Temp

More information

SN54HC377, SN54HC378, SN54HC379 SN74HC377, SN74HC378, SN74HC379 OCTAL, HEX, AND QUAD D-TYPE FLIP-FLOPS WITH CLOCK ENABLE

SN54HC377, SN54HC378, SN54HC379 SN74HC377, SN74HC378, SN74HC379 OCTAL, HEX, AND QUAD D-TYPE FLIP-FLOPS WITH CLOCK ENABLE SN54HC377, SN54HC378, SN54HC379 SN74HC377, SN74HC378, SN74HC379 OCTAL, HEX, AND QUAD D-TYPE FLIP-FLOPS WITH CLOCK ENABLE SCLS202 D2684, DECEMBER 1982 REVISED JUNE 1989 PRODUCTION DATA information is current

More information

description/ordering information

description/ordering information SCLS079E MARCH 1984 REVISED MARCH 2004 Wide Operating Voltage Range of 2 V to 6 V Outputs Can Drive Up To 10 LSTTL Loads Low Power Consumption, 20-µA Max I CC Typical t pd = 7 ns ±4-mA Output Drive at

More information

Low Profile, High Current IHLP Inductors

Low Profile, High Current IHLP Inductors IHP-33DZ-1 ow Profile, High Current IHP Inductors Manufactured under one or more of the following: US Patents;,19,375/,,7/,9,9/,,. Several foreign patents, and other patents pending. STANDARD EECTRICA

More information

TOSHIBA Transistor Silicon NPN Epitaxial Type TMBT3904

TOSHIBA Transistor Silicon NPN Epitaxial Type TMBT3904 TOSHIBA Transistor Silicon NPN Epitaxial Type TMBT3904 Audio Frequency General Purpose Amplifier Applications High voltage and high current : VCEO = 50 V, IC = 150 ma (max) Complementary to TMBT3906 Absolute

More information

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T a = 25 ) Symbol. Note. V RM V R I O I FSM T j T stg.

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T a = 25 ) Symbol. Note. V RM V R I O I FSM T j T stg. Schottky Barrier Diode CCS15S30 Silicon Epitaxial CCS15S30 1. Applications High-Speed Switching 2. Features (1) Low forward voltage: V F (1) = 0.33 V (typ.) 3. Packaging and Internal Circuit 1: Cathode

More information

FEATURES. IHLP-2525CZ μh ± 20 % ER e3 MODEL INDUCTANCE VALUE INDUCTANCE TOLERANCE PACKAGE CODE JEDEC LEAD (Pb)-FREE STANDARD

FEATURES. IHLP-2525CZ μh ± 20 % ER e3 MODEL INDUCTANCE VALUE INDUCTANCE TOLERANCE PACKAGE CODE JEDEC LEAD (Pb)-FREE STANDARD IHP-CZ- IHP Commercial Inductors, High Temperature ( C) Series DESIGN SUPPORT TOOS click logo to get started Models Available STANDARD EECTRICA SPECIFICATIONS INDUCTANCE ± % AT khz,. V, A (μh) Design Tools

More information

SN54LS280, SN54S280, SN74LS280, SN74S280 9-BIT ODD/EVEN PARITY GENERATORS/CHECKERS

SN54LS280, SN54S280, SN74LS280, SN74S280 9-BIT ODD/EVEN PARITY GENERATORS/CHECKERS SN54LS280, SN54S280, SN74LS280, SN74S280 9-BIT ODD/EVEN PARITY GENERATORS/CHECKERS SDLS152 DECEMBER 1972 REVISED MARCH 1988 PRODUCTION DATA information is current as of publication date. Products conform

More information

PACKAGE OPTION ADDENDUM www.ti.com 22-Jun-2018 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish (6) MSL Peak Temp (3) Op Temp

More information