UCSB and Teledyne. (37 years) Bobby Brar

Transcription

1 UCSB and Teledyne (37 years) Bobby Brar

2 Teledyne Technologies Four Segments $2.3B in FY 215 Digital Imaging Instrumentation Aerospace and Defense Electronics Engineered Systems Visible & Infrared Sensors and Cameras LIDAR Signal/Image Processing Optics Offshore Energy Ocean Health & Climatology Aging U.S. Infrastructure Air & Water Quality RF & Microwave Components Digital Flight Data Systems Satcom Amplifiers and Modems Jamming & Electronic Warfare Military & Space System Development and Integration Radiological Analysis Energy Systems April 217 1

3 Teledyne s Acquisition History (a) Teledyne Scientific & Imaging 2

4 TDY Financial Metrics Excellent ROI Track Record $M EBIT $M EPS $ 3 $295 $ $227 $243 $ $162 $189 $166 $ $ $11 2. $67 5 $37 $43 $47 1. EBIT % % 5.6% 5.6% 6.6% 8.3% 8.7% 1.% 1.% 9.4% 1.9% 11.7% 11.4% 1.3% 12.3% 12.3%. April 217 3

5 Teledyne Central Research Laboratory A Unique Asset Government, Customer and Teledyne funded R&D Established in technical staff ~ 45% PhDs Over 3 active patents Our Business Model Government funding supports early stages of novel, high-risk technology development Researchers work jointly with Teledyne s operating businesses, their customers, and strategic partners to commercialize technology April 217 4

6 History of Teledyne and UCSB = People Robert Mehrabian Larry Coldren John Bowers Mark Rodwell Scott Grafton Brad Chmelka Umesh Mishra Herb Kroemer Art Gossard David Awschalom Elliot Brown Steve Long Pochi Yeh David Clarke Fred Lange Miguel Urteaga Zach Griffith Adam Young Chanh Nguyen Bobby Brar Olivier Sudre Sergio Lucato Janet Davis Sid Bhargava Liz Rangel Andy Carter Andrea Arias Bo Shojaei Gerry Sullivan Richard Blank Dan Denninghoff Mark Field Dennis Scott Devin Leonard Mason Thomas Recent April 217 5

7 GaAs Electronics Grew out of DoD funding in mid-7 s & SC s Si Valley entreprenurial spirit Assembled world s strongest technical team > 1 researchers at SC in mid-7s > 3 years of DoD funding with diverse applications Co-invested with DARPA to establish GaAs Pilot Line ( 85) Seeded many GaAs-based companies Gigabit Logic, Vitesse (1 st gen tech) Rockwell Semiconductor > Connexant - Skyworks - Mindspeed SC technology in every iphone! (produced at the pilot line ) Licensing success with MOCVD Generated > $75 M in royalty income From Derek Cheung

8 High Level Capabilities R&D Business Impact to Tdy Semiconductor Fab RF/mmWave MMICs (Design/Pkg) Gsps ADC/DAC (Design/Pkg) MEMS Chip-Scale Atomic Clocks Resonators for Gyros Thermal analysis/design Signal Processing/Algorithms Materials Failure Analysis / Test New Materials Ceramics Coatings In Partnership with UCSB April 217 7

9 mmwave is as much an integration/packaging challenge as a device/circuit challenge Heterogeneous 3D Integration ADC mmwave Package InP GaN Device, Circuit Low-loss 2.5D interconnect SiGe April 217 8

10 InP Started with Mark Rodwell (DARPA TFAST) Rodwell 22: InP HBT Scaling Roadmaps Key scaling challenges emitter & base contact resistivity current density device heating collector-base junction width scaling & Yield! key figures of merit for logic speed

11 THz CPW-G Common-Base Amplifier Designs 13nm InP Technology CPW-G Common Base amplifier designs used for tracking process yield and performance 8-stage (55GHz) and 9-stage (67GHz) amplifier designs with separate emitter and collector bias supplies 55GHz Amp Design 67GHz Amp Design April 217 1

12 Integrated 58GHz PLL receiver with Differential Common-base Amplifier Chip Photograph IF Input LO Buffer Amp SH Mixer Differential Low Noise Amplifier RF Output PLL REF 195GHz PLL Functional testing of PLL-RX and PLL-TX components underway Receiver with a 6-stage stacked differential common-base amplifier with an integrated 19GHz Phase Locked Loop driving a 3rd order sub-harmonic mixer Chip dimensions: 1.95x.7mm 2 DC power dissipation ~.7W April

13 UCSB Low-power mm-wave transceiver study S(2,1) (db) S(2,1) (db) S(2,1) (db) S(2,1) (db) S(1,1), S(2,2) (db) S(1,1), S(2,2) (db) S(1,1), S(2,2) (db) S(1,1), S(2,2) (db) Gain (db) Gain (db) Gain (db) Gain (db) Output Power (dbm) Output Power (dbm) Output Power (dbm) Output Power (dbm) V_Antenna H_Antenna Input T/Rx Switch LNA PA_V PA_H V/H Switch Phase Shifter Phase Shifter VGA VGA Output T/Rx Switch Rx_V Output / Tx Inpout S(2,1), V S(2,1), H S(1,1), V S(1,1), H S(2,2), V S(2,2), H Tx, 1.5 V Frequency (GHz) Transmit S(2,1), V S(2,1), H S(1,1), V S(2,2), V S(1,1), H S(2,2), H Tx, 1 V Frequency (GHz) Tx, 1.5 V Gain, V Gain, H Pout, V Pout, H Input Power (dbm) Tx, 1 V 12 Gain, V -1 Gain, H 1 Pout, V Pout, H Input Power (dbm) Rx_H Output Designed at UCSB Fabricated at Teledyne in 13 nm InP Tested at Teledyne by UCSB Excellent fidelity between measurement and simulations Validates path to higher efficiency transceivers at I Ctrl =.4 ma, Q Ctrl =.3 ma (Phase shifter gain: -5 db) Receive 3 3 S(2,1), V Rx, 1.5 V 2 S(2,1), H S(1,1), V S(1,1), H S(2,2), V 2 1 S(2,2), H Frequency (GHz) 3 3 S(2,1), V Rx, 1 V 2 S(2,1), H S(1,1), V S(1,1), H S(2,2), V 2 1 S(2,2), H Frequency I Ctrl =.4 ma, Q Ctrl =.3 ma (Phase shifter gain: -5 db) 24 5 Rx, 1.5 V Gain, V Gain, H Pout, V Pout, H Input Power (dbm) 25 Rx, 1 V Gain, V Gain, H Pout, V Pout, H Input Power (dbm)

14 InP HBT ICs 25 nm 35/6GHz Ft/Fmax, 4.5V process mmwave amps, samplers, edge-generators Design and Fab 1GHz 13 4-level Interconnect 14-bit RF RZ-DAC 25 nm InP HBT 235 GHz Power Amplifier Track-and-Hold with 4 5GHz

15 InP Amplifier Products 14 2GHz PA Product

16 InP switch product Chart 15 4 Gbps 48 Gbps 56 Gbps

17 N-polar GaN with Umesh Mishra Very promising technology for higher output power at mmwave frequencies April

18 mmwave Experience: SiGe RFIC Design Services Chart GHz 2/3GHz 44-5GHz 94GHz

19 The future of mmwave Packaging 2.5D On-Wafer Heterogeneous Integration Chart 18