Features / Advantages: Applications: Package: E2-Pack. 3~ Rectifier with brake unit for drive inverters

Size: px

Start display at page:

Download "Features / Advantages: Applications: Package: E2-Pack. 3~ Rectifier with brake unit for drive inverters"

Amber Lamb
6 years ago
Views:

MM24UED hyrisor Module M 24 D 3~ ecifier FSM 5 Brake hopper ES 2 8 25 E(sa).

Package: E2-Pack Package wih DB ceramic mproved emperaure and power cycling Planar passivaed chips ery low forward volage drop ery low leakage curren X2P - 2nd generaion Xreme ligh Punch hrough ugged

1 MM24UED hyrisor Module M 24 D 3~ ecifier FSM 5 Brake hopper ES E(sa).7 3~ ecifier Bridge, half-conrolled (high-side) + Brake Uni Par number MM24UED Backside: isolaed D D3 D D2 D4 D Feaures / dvanages: pplicaions: Package: E2-Pack Package wih DB ceramic mproved emperaure and power cycling Planar passivaed chips ery low forward volage drop ery low leakage curren X2P - 2nd generaion Xreme ligh Punch hrough ugged X2P design resuls in: - shor circui raed for µsec. - very low gae charge - low EM - square 2x c hin wafer echnology combined wih X2P design resuls in a compeiive low E(sa) and low hermal resisance 3~ ecifier wih brake uni for drive inverers solaion olage: 3 ~ ndusry sandard ouline ohs complian Soldering pins for PB mouning Heigh: 7 mm Base plae: opper inernally DB isolaed dvanced power cycling Phase hange Maerial available erms and ondiions of Usage he daa conained in his produc daa shee is exclusively inended for echnically rained saff. he user will have o evaluae he suiabiliy of he produc for he inended applicaion and he compleeness of he produc daa wih respec o his applicaion. he specificaions of our componens may no be considered as an assurance of componen characerisics. he informaion in he valid applicaion- and assembly noes mus be considered. Should you require produc informaion in excess of he daa given in his produc daa shee or which concerns he specific applicaion of your produc, please conac your local sales office. Due o echnical requiremens our produc may conain dangerous subsances. For informaion on he ypes in quesion please conac your local sales office. Should you inend o use he produc in aviaion, in healh or life endangering or life suppor applicaions, please noify. For any such applicaion we urgenly recommend - o perform join risk and qualiy assessmens; - he conclusion of qualiy agreemens; - o esablish join measures of an ongoing produc survey, and ha we may make delivery dependen on he realizaion of any such measures. 27 XYS all righs reserved Daa according o E 747and per semiconducor unless oherwise specified 273f

2 MM24UED ecifier Symbol SM/DSM M/DM /D Definiion ondiions 5 aings yp. max. 7 forward volage drop 8.27 D hreshold volage 5.83 for power loss calculaion only r slope resisance 5.3 mω hermal resisance juncion o case.4 K/W hj P o oal power dissipaion 32 W P GM P G SM max. forward surge curren ms; (5 Hz), sine 45 8,3 ms; ( Hz), sine J juncion capaciance 4 f MHz 74 max. gae power dissipaion P 3 µs 5 average gae power dissipaion ms; (5 Hz), sine 8,3 ms; ( Hz), sine min µs 5 P 5 ² value for fusing ms; (5 Hz), sine 45 (di/d) cr bridge oupu curren criical rae of rise of curren recangular d 2 8,3 ms; ( Hz), sine ms; (5 Hz), sine 8,3 ms; ( Hz), sine Uni µ m k²s k²s k²s k²s pf 5 ; f 5 Hz P 2 µs; di G /d.45 /µs; G.45; ⅔ repeiive, 24 (dv/d) criical rae of rise of volage ⅔ DM 5 cr max. non-repeiive reverse/forward blocking volage max. repeiive reverse/forward blocking volage reverse curren, drain curren /D /D hh hermal resisance case o heasink. GK ; mehod (linear volage rise) G gae rigger volage D DM k k k k W W W /µs /µs /µs.5 G gae rigger curren D m m GD gae non-rigger volage ⅔.2 D DM 5 GD gae non-rigger curren m L laching curren p µs m G.45; di G /d.45 /µs H holding curren D GK 25 2 m gd gae conrolled delay ime ½ 25 2 µs D DM G.45; di G /d.45/µs non-repe., q urn-off ime ; 8 ; ⅔ DM 25 5 µs di/d /µs dv/d 2 /µs p 2 µs 8 K/W 27 XYS all righs reserved Daa according o E 747and per semiconducor unless oherwise specified 273f

3 MM24UED Brake GB + Diode Symbol ES S M 25 8 Definiion collecor emier volage collecor curren ondiions max. 2 P o oal power dissipaion 25 5 W E(sa) collecor emier sauraion volage ; (h) gae emier hreshold volage 4 m; ES collecor emier leakage curren ; S BSO max. D gae volage max. ransien gae emier volage min. aings yp. 8 4 Uni 7.5 urn-on delay ime 23 ns reverse bias safe operaing area E E ES gae emier leakage curren ± ±2 ±3. 3 m. m QG(on) oal gae charge E ; 5 ; 34 n E E d(on) r d(off) f on off M SSO S curren rise ime urn-off delay ime curren fall ime urn-on energy per pulse urn-off energy per pulse shor circui safe operaing area shor circui duraion inducive load ; E ±5 ;.8 Ω ±5 ;.8 Ω EK 2 EK 2 72 ; ±5 E G G 5 7 ns 38 ns 23 ns 2.5 mj.5 mj shor circui curren S G.8Ω; non-repeiive 45 hj hh hermal resisance juncion o case hermal resisance case o heasink..25 n µs K/W K/W Brake Diode M F25 max. repeiive reverse volage forward curren F 8 8 F forward volage reverse curren M Q rr M rr reverse recovery charge max. reverse recovery curren reverse recovery ime F -di /d F F 9/µs m m 9. µ ns reverse recovery energy 3 mj hj hermal resisance juncion o case. K/W hh hermal resisance case o heasink. K/W 27 XYS all righs reserved Daa according o E 747and per semiconducor unless oherwise specified 273f

4 MM24UED Package aings Symbol Definiion ondiions min. yp. max. Uni MS MS curren per erminal 2 virual juncion emperaure -4 5 op operaion emperaure Weigh M D dspp/pp dspb/pb E2-Pack sg sorage emperaure SOL mouning orque 3 creepage disance on surface sriking disance hrough air isolaion volage second minue erminal o erminal erminal o backside 5/ Hz, MS; SOL m g Nm mm mm Logo 2D Daa Marix XXXXXXXXXX yywwx UL Par number Dae ode Locaion Par descripion M M 24 U ED Module hyrisor (S) hyrisor (up o 8) urren aing 3~ ecifier Bridge, half-conrolled (high-side) + Brake Uni everse olage [] E2-Pack Ordering Sandard Ordering Number Marking on Produc Delivery Mode Quaniy ode No. MM24UED MM24UED Box Equivalen ircuis for Simulaion * on die level 5 hyrisor Brake GB + max hreshold volage.83 max slope resisance * Brake Diode mω 27 XYS all righs reserved Daa according o E 747and per semiconducor unless oherwise specified 273f

5 MM24UED Oulines 3,5 ±,5 E2-Pack D 2, ±,5 7 ±,5 Deail Ø Ø 2,5-,3 Ø 2,-,3,5 +,3 or der Monage yp. µm konvex über 75 mm Before mouning yp. µm convex over 75 mm Deail,8 ±,2 Deail D 5 ±,2 ±,5 93 ±,2 79,2 2,2,2 9,83 23,4 35,7 4,5 57,93 9,3,8 ±,5 Ø 5,5 +, -, , ,2 45 ±,2 ndex ,2.43, ±,2 4,9,2 9,83 23,4 35,7 38,88 42,9 54,2 57,93,74 73,7 7,98 8,79 Bemerkung / Noe: 7,5 ±,3 - Nicholeriere Maße nach / Measure wihou olerances according DN SO 278--m - PB-Lochmuser / PB hole paern: see pin posiion - oleranz Pin-Posiion und PB-Lochmuser / olerance of pin posiion and PB hole paern:. - Monageanleiung / Mouning insrucion: pplicaion noe XN24 Deail : PB-Monage / Mouning on PB - Empfohlene, selbsschneidende Schraube / ecommended, self-apping screw: EJO P (Größe / size: K25) - Max. Schraubenlänge / Max. screw lengh: PB-Dicke / hickness + mm (max. Lochiefe / hole deph) - Empfohlenes Drehmomen / ecommended mouning orque:.5 Nm D D3 D D2 D4 D XYS all righs reserved Daa according o E 747and per semiconducor unless oherwise specified 273f

6 MM24UED hyrisor 24 5 Hz, 8% M [] Fig. Forward characerisics SM [s] Fig. 2 Surge overload curren SM : cres value, : duraion 2 4 [ 2 s] [ms] 4 Fig. 3 2 versus ime (- s) G [] : GD, 5 2: G, 25 3: G, : P G.5 W 5: P GM 5 W : P GM W. G [m] Fig. 4 Gae volage & gae curren gd.. [µs]. 25 lim. yp G Fig. 5 Gae conrolled delay ime gd 2 2 M 8 4 dc case [ ] Fig. Max. forward curren a case emperaure.5 P o 5 [W] 5 dc () hh amb [ ] Fig. 7a Power dissipaion versus direc oupu curren Fig. 7b and ambien emperaure Z hj [K/W] i hi (K/W) i (s) [ms] Fig. 8 ransien hermal impedance juncion o case 27 XYS all righs reserved Daa according o E 747and per semiconducor unless oherwise specified 273f

7 MM24UED Brake GB + Diode E E on E [] Fig. Oupu characerisics GB G.8 Ohm E ±5 25 d(on) r 4 3 r 2 [ns] E off 3 2 E [] Fig.2 yp. oupu characerisics GB G.8 Ohm E ±5 25 d(off) f [ns] F [] Fig. 3 yp. ransfer charac. GB 25 E on Fig. 4 yp. urn-on energy & swich. imes vs. collecor curren E off Fig. 5 yp. urn-off energy & swich. imes vs. collecor curren F [] Fig. yp. forward curren versus F G.8 Ohm F Fig. 7 yp. reverse recovery characerisics Diode F G [Ohm] Fig. 8 yp. reverse recovery characerisics Diode Z hj. [K/W] Diode GB GB Diode i i i i [s] Fig. 9 ransien hermal resisance juncion o case 27 XYS all righs reserved Daa according o E 747and per semiconducor unless oherwise specified 273f

High Voltage Thyristor Module

High Voltage Thyristor Module MN2U22ED High olage hyrisor Module M 22 2 D FSM 5 3~ ecifier Brake hopper ES 7 3 25 E(sa) 2.5 3~ ecifier Bridge, half-conrolled (high-side) + Brake Uni + N Par number MN2U22ED Backside: isolaed 24/25 3