Ultra-Low V chottky Rectifier, 10 A, 120 V eatures Ultra Low orward Voltage Drop Low Thermal Resistance Very Low Profile: Typical Height of 1.1 mm Trench chottky Technology Green Molding Compound as per IEC61249 tandard These Devices are Pb ree, Halogen ree and are RoH Compliant 3 Cathode www.onsemi.com chottky Rectifier Anode 1 Anode 2 pecifications 3 ABOLUTE MAXIMUM RATING (T A = 25 C unless otherwise noted) ymbol Parameter Value Unit V RRM Peak Repetitive Reverse Voltage 120 V 2 1 TO 277 CAE 340BQ V RWM Working Peak Reverse Voltage 120 V V RM RM Reverse Voltage 85 V V R DC Blocking Voltage 120 V I (AV) Average Rectified Peak orward urge Current I M Non Repetitive Peak orward urge Current 10 A 180 A T J Operating Junction Temperature Range 55 to +150 C T TG torage Temperature Range 55 to +150 C tresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. MARKING DIAGRAM $Y&Z&3 $Y = ON emiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) = pecific Device Code ORDERING INORMATION ee detailed ordering and shipping information on page 2 of this data sheet. emiconductor Components Industries, LLC, 2015 June, 2018 Rev. 2 1 Publication Order Number: /D
THERMAL CHARACTERITIC (T A = 25 C unless otherwise noted) (Note 1) ymbol Parameter Minimum Land Pattern Maximum Land Pattern R JA Junction to Ambient Thermal Resistance 100 40 C/W Ψ JL Junction to Lead Thermal Characteristics, Thermocouple oldered to Anode 15 12 C/W Junction to Lead Thermal Characteristics, Thermocouple oldered to Cathode 6 5 1. The thermal resistances (R JA & Ψ JL ) are characterized with device mounted on the following R4 printed circuit boards, as shown in igure 1 and igure 2. PCB size: 76.2 x 114.3 mm. Minimum land pattern size: 4.9 x 4.8 mm (big pattern, x1), 1.4 x 1.52 mm (small pattern, x2). Maximum land pattern size: 30 x 30 mm (pattern, x2). orce line trace size = 55 mils, sense line trace size = 4 mils. Unit igure 1. Minimum Land Pattern of 2 oz Copper igure 2. Maximum Land Pattern of 2 oz Copper ELECTRICAL CHARACTERITIC (T A = 25 C unless otherwise noted) ymbol Parameter Conditions Min Typ Max Unit BV R Breakdown Voltage I R = 0.5 ma 120 V V orward Voltage Drop I = 5 A 0.667 V I = 5 A, T A = 125 C 0.530 I = 10 A 0.748 0.800 I = 10 A, T A = 125 C 0.602 0.620 I R Reverse Current V R = 80 V 0.0016 ma V R = 80 V, T A = 125 C 2.703 V R = 120 V 0.004 0.025 V R = 120 V, T A = 125 C 6.791 10 C J Junction Capacitance V R = 4 V, f = 1 MHz 608 p T rr Reverse Recovery Time I = 0.5 A, I R = 1 A, I rr = 0.25 A 16.70 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INORMATION Part Number Top Mark Package hipping TO 277 3L (Pb ree/halogen ree) 5000 / Tape & Reel or information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging pecifications Brochure, BRD8011/D. www.onsemi.com 2
TYPICAL PERORMANCE CHARACTERITIC I R, Reverse Current (ma) 100 10 1 0.1 0.01 1E 3 1E 4 T A = 150 C T A = 125 C T A = 75 C T A = 25 C T A = 55 C V, orward Voltage (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 T A = 75 C T A = 25 C T A = 55 C T A = 125 C T A = 150 C 1E 5 10 30 50 70 90 110 0.0 0.01 0.1 1 10 V R, Reverse Voltage (V) I, orward Current (A) igure 3. Typical Reverse Characteristics igure 4. Typical orward Characteristics C J, Junction Capacitance (p) 10000 1000 100 10 0.1 Peak orward urge Current (A) 300 250 200 150 100 50 0 1 10 100 1 10 100 V R, Reverse Voltage (V) igure 5. Typical Junction Capacitance Number of Cycles igure 6. Maximum Non Repetitive Peak orward urge Current I, Average orward Current (A) 12 T L (Cathode, 3 cm x 3 cm Pad) 10 8 6 T A (3 cm x 3 cm Pad) 4 2 0 0 25 50 75 100 125 150 175 Ambient / Lead Temperature ( C) igure 7. orward Current Derating Curve www.onsemi.com 3
MECHANICAL CAE OUTLINE PACKAGE DIMENION TO 277 3LD CAE 340BQ IUE O DATE 30 EP 2016 DOCUMENT NUMBER: TATU: NEW TANDARD: emiconductor Components Industries, LLC, 2002 October, 2002 Rev. 0 DECRIPTION: 98AON13861G ON EMICONDUCTOR TANDARD TO 277 3LD http://onsemi.com 1 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped CONTROLLED COPY in red. Case Outline Number: PAGE 1 O XXX 2
DOCUMENT NUMBER: 98AON13861G PAGE 2 O 2 IUE REVIION DATE O RELEAED OR PRODUCTION ROM AIRCHILD TO277A03 TO ON 30 EP 2016 EMICONDUCTOR. REQ. BY J. LETTERMAN. ON emiconductor and are registered trademarks of emiconductor Components Industries, LLC (CILLC). CILLC reserves the right to make changes without further notice to any products herein. CILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does CILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in CILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. CILLC does not convey any license under its patent rights nor the rights of others. CILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the CILLC product could create a situation where personal injury or death may occur. hould Buyer purchase or use CILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold CILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that CILLC was negligent regarding the design or manufacture of the part. CILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. emiconductor Components Industries, LLC, 2016 eptember, 2016 Rev. O Case Outline Number: 340BQ
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