TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2712

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Transcription:

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2712 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: V CEO = 50 V, I C = 150 ma (max) Excellent h FE linearity : h FE (I C = 0.1 ma)/ h FE (I C = 2 ma) = 0.95 (typ.) High h FE: h FE = 70 to 700 Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SA1162 Small package Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage V CBO 60 V Collector-emitter voltage V CEO 50 V Emitter-base voltage V EBO 5 V Collector current I C 150 ma Base current I B 30 ma Collector power dissipation P C 150 mw Junction temperature T j 125 C Storage temperature range T stg 55 to 125 C JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( Handling Precautions / Derating Concept and Methods ) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking Start of commercial production 1982-10 1

Electrical Characteristics (Ta = 25 C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I CBO V CB = 60 V, I E = 0 0.1 μa Emitter cut-off current I EBO V EB = 5 V, I C = 0 0.1 μa DC current gain h FE (Note) V CE = 6 V, I C = 2 ma 70 700 Collector-emitter saturation voltage V CE (sat) I C = 100 ma, I B = 10 ma 0.1 0.25 V Transition frequency f T V CE = 10 V, I C = 1 ma 80 MHz Collector output capacitance C ob V CB = 10 V, I E = 0, f = 1 MHz 2.0 3.5 pf Noise figure NF V CE = 6 V, I C = 0.1 ma, f = 1 khz, R g = 10 kω 1.0 10 db Note: h FE classification O (O): 70 to 140, Y (Y): 120 to 240, GR (G): 200 to 400, BL (L): 350 to 700 ( ) marking symbol 2

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Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT ("UNINTENDED USE"). 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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS. 5