Toroid, High Current, High Temperature, Radial Leaded

Similar documents
Low Profile, High Current IHLP Inductors

0.400 ± [ ± 0.127] [4.0] max ± [ ± 0.127] [3.251]

Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

FEATURES APPLICATIONS. IHLP-6767GZ μh ± 20 % ER e3 MODEL INDUCTANCE VALUE INDUCTANCE TOLERANCE PACKAGE CODE JEDEC LEAD (Pb)-FREE STANDARD

FEATURES. IHLP-2525CZ μh ± 20 % ER e3 MODEL INDUCTANCE VALUE INDUCTANCE TOLERANCE PACKAGE CODE JEDEC LEAD (Pb)-FREE STANDARD

Low Profile, High Current IHLP Inductors

FEATURES APPLICATIONS. SRF TYP. (MHz) ± [5.18 ± 0.254] [2.0] Max.

0.400 ± [ ± 0.127] [4.0] max ± [ ± 0.127]

Low Profile, High Current IHLP Inductors

SRF TYP. (MHz) ± [5.18 ± 0.254] [3.0] Max.

FEATURES APPLICATIONS ± [5.18 ± 0.254] [3.0] Max.

APPLICATIONS. IHLP-3232DZ μh ± 20 % ER e3 MODEL INDUCTANCE VALUE INDUCTANCE TOLERANCE PACKAGE CODE JEDEC LEAD (Pb)-FREE STANDARD

IHLP-2525CZ-8A 22 μh ± 20 % ER e3 MODEL INDUCTANCE VALUE INDUCTANCE TOLERANCE PACKAGE CODE JEDEC LEAD (Pb)-FREE STANDARD MODEL SIZE PACKAGE CODE

Low Profile, High Current IHLP Inductors

Low Profile, High Current IHLP Inductors

FEATURES APPLICATIONS. IHLP-6767GZ-5A 2.2 μh ± 20 % ER e3 MODEL INDUCTANCE VALUE INDUCTANCE TOLERANCE PACKAGE CODE JEDEC LEAD (Pb)-FREE STANDARD

0.322 ± [8.18 ± 0.076]

Reinforced Winding Wirewound Power Resistor

Low Profile, High Current IHLP Inductors

Low Profile, High Current IHLP Inductors

Low Profile, High Current IHLP Inductor

Low Profile, High Current IHLP Inductors

AC Line Rated Ceramic Disc Capacitors Class X1, 760 V AC / Class Y1, 500 V AC

AC Line Rated Ceramic Disc Capacitors Class X1, 400 V AC / Class Y4, 125 V AC

Low Profile, High Current IHLP Inductors

High Current Through Hole Inductor, High Temperature Series

Wirewound Resistors, Industrial Power, Silicone Coated, Fixed Edgewound Tubular

Power Resistors Cooled by Auxiliary Heatsink (Not Supplied) Thick Film Technology

Vitreous Wirewound Resistors with Corrugated Ribbon

145 V PTC Thermistors For Overload Protection

High Speed Optocoupler, 5 MBd

Solid-Electrolyte TANTALEX Capacitors, Hermetically-Sealed, Axial-Lead

Lower Voltage Ceramic Disc Capacitors 2 kv DC to 7.5 kv DC

High Stability - High Temperature (230 C) Thin Film Wraparound Chip Resistors

IMPROVED PRODUCT VCS331, VCS332

FEATURES [31.750] Min.

Wirewound Resistor, Industrial High Power, Enamelled Tubular, Adjustable

± 0.2 ppm/ C ± 3 ppm/ C. ± 2.0 ppm/ C

Commercial Thin Film Resistor, Surface Mount Chip

BAS70-00-V to BAS70-06-V

SYMBOL TYPE NUMBER VALUE UNIT. Power dissipation at Tamb = 60 ºC 1.5 W. Non repetitive peak zener dissipation (t = 10ms) 40 W

DCR DCR. Irms (A) Isat (A) Typ. Max. Recommended Layout NATURAL COOLING

Bulk Metal Foil Hermetically sealed, Small Package, Voltage Dividers with TCR Tracking of 0.1 ppm/ C and Tolerance Match down to 0.

SRP5030CA Series Shielded Power Inductors

High-Temperature Foil Patterns

RLB Series Radial Lead Inductors

TOSHIBA Transistor Silicon NPN Epitaxial Type TMBT3904

Type 941C, Polypropylene Capacitors, for Pulse, Snubber High dv/dt for Snubber Applications

SRR4828A Series - Shielded Power Inductors

[Type text] PMP6007 TPS Vac Non Dimmable 10W LED Driver Reference Design

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2712

TB General description. 2. Features and benefits. 3. Applications. 4. Pinning information. 5. Ordering information

50 V, 3 A PNP low VCEsat (BISS) transistor

Is Now Part of. To learn more about ON Semiconductor, please visit our website at

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK330

RN1114, RN1115, RN1116, RN1117, RN1118

RN1401, RN1402, RN1403 RN1404, RN1405, RN1406

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T a = 25 ) Symbol. Note. V RM V R I O I FSM T j T stg.

SN54LS266, SN74LS266 QUADRUPLE 2-INPUT EXCLUSIVE-NOR GATES WITH OPEN-COLLECTOR OUTPUTS

RN1421, RN1422, RN1423, RN1424 RN1425, RN1426, RN1427

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1910, RN1911

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T a = 25 ) Symbol. Note. V RM V R I FM I O P D I FSM T j T stg

V RSM = 30 V, I F(AV) = 2.0 A Schottky Diode. Description. Package. Features. Applications (1) (2) (1) Cathode (2) Anode

RN1441, RN1442, RN1443, RN1444

PACKAGE OPTION ADDENDUM

RN1441,RN1442,RN1443,RN1444

SRR4818A Series - Shielded Power Inductors

BAT54 series 1. Product profile 2. Pinning information Schottky barrier diodes 1.1 General description 1.2 Features and benefits

Recommended Land Pattern: [mm]

V RSM = 400 V, I F(AV) = 2.0 A General-Purpose Rectifier Diode. Description. Package. Features. Applications (1) (2) (1) Cathode (2) Anode

For a detailed datasheet and other design support tools, please contact

Ultrafast epitaxial rectifier diode in a SOT226 (I2PAK) plastic package. Discontinuous Current Mode (DCM) Power Factor Correction (PFC)

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941

Cranking Simulator for Automotive Applications

V RM = 600 V, I F(AV) = 1.0 A General-Purpose Rectifier Diode. Description. Package. Features. Applications

2.4 GHz. Description. Order Number. Specification. Value. Gain Impedance Type Polarization VSWR Frequency Weight Size Antenna Color

V RM = 600 V, I F(AV) = 0.5 A, t rr = 100 ns Fast Recovery Diode. Description. Package. Features. Applications

Schottky Barrier Diode Dual Series Schottky Barrier Diode for Mixer and Detector 5V, 30mA, 0.69pF, CP

Passivated, sensitive gate thyristors in a SOT54 plastic package. General purpose switching and phase control.

PACKAGE OPTION ADDENDUM

Solid-Electrolyte TANTALEX Capacitors Hermetically-Sealed, Axial-Lead FEATURES Terminations: Tin/lead (SnPb), 100 % Tin (RoHS compliant)


Is Now Part of To learn more about ON Semiconductor, please visit our website at

BLF7G20L-160P; BLF7G20LS-160P

SAW FILTER FOR RKE Murata part number :SAFBC315MSP0T00

Is Now Part of To learn more about ON Semiconductor, please visit our website at


TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086. Characteristics Symbol Test Condition Min Typ. Max Unit

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK mw

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5066. Characteristics Symbol Test Condition Min Typ. Max Unit

SERIES 2000 STICK ANTENNA

Is Now Part of. To learn more about ON Semiconductor, please visit our website at

PMBFJ111; PMBFJ112; PMBFJ113

PACKAGE OPTION ADDENDUM

SN54LS181, SN54S181 SN74LS181, SN74S181 ARITHMETIC LOGIC UNITS/FUNCTION GENERATORS

DISCONTINUED CONTACT KEMET FOR EQUIVALENT REPLACEMENT

TIP42 / TIP42C PNP Epitaxial Silicon Transistor

FS8G - FS8M. 8 A Standard Recovery Surface Mount Rectifiers

Is Now Part of To learn more about ON Semiconductor, please visit our website at

MaxLite Hazardous Location StaxMAX LED High Output Flood Lights

Transcription:

Toroid, High Current, High Temperature, Radial Leaded FEATURES Printed circuit mounting Toroid design reduces EMI Vertical or horizontal mounting to optimize PCB layout High temperature rating of C - no aging Material categorization: For definitions please see www.vishay.com/doc?99912 APPLICATIONS Switching power supplies EMI/RFI filtering Output chokes STANAR ELECTRICAL SPECIFICATIONS in inches [millimeters] IN. L (μh) TOLERANCE (%) CR (VERTICAL MOUNT) TYP. MAX. CR (HORIZONTAL MOUNT) TYP. MAX. RATE VERTICAL MOUNT (A) (1) RATE HORIZONTAL MOUNT (A) (1) SATURATION (A) (2) LEA IAMETER.39.14.16.18.2 32. 28. 23.53 [1.346] 1.2.2.23.25.28 25.5 22.5 12.5.53 [1.346] 1.5.23.26.28.3 23.25 21..5.53 [1.346] 4.7.64.72.72.8 11.9 11.25 5.9.42 [1.67].132.145.15.164 7.25 7. 4.2.34 [.864] 15.21.23.22.24 5.6 5.5 3.4.31 [.787] 22.24.27.26.29 5.2 5. 2.5.31 [.787] 39.48.5.5.55 3.3 3.3 1.9.25 [.635] 68.8.86.82.9 2.5 2.5 1.4.22 [.559].99.8.6.118 2.25 2.25 1.15.22 [.559] Notes Operating temperature (ambient + T): - 55 C to + C, inductance tested at.25 V RMS, 1 khz, CR tested at 25 C ± 5 C, all material rated at C (1) C current that will cause an approx. T of C (2) C current that will cause L to drop approx. % IMENSIONS in inches [millimeters].66 [16.76] Max..36 [9.144] Max..66 [16.76] Max..36 [9.144] Max. LEAS TINNE TO WITHIN.62 [1.575] MAX. OF COIL.6 [15.24] Ref. TINNE LEAS.28 [7.112] Ref..5 [12.7] Min. LEAS TINNE TO WITHIN.62 [1.575] MAX. OF COIL.5 [12.7] Min. TINNE LEAS VERTICAL MOUNT (Mounting/Coating Code - 1U) HORIZONTAL MOUNT (Mounting/Coating Code - 2U) Revision: 9-Mar-12 1 ocument Number: 34234 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

ORERING INFORMATION 1U μh ± % EB e2 MOEL MOUNTING/COATING INUCTANCE INUCTANCE PACKAGE JEEC LEA (Pb)-FREE VALUE TOLERANCE STANAR GLOBAL PART NUMBER T J 3 1 U E B 1 M H T MOEL MOUNTING/COATING PACKAGE INUCTANCE VALUE INUCTANCE TOLERANCE SERIES TJ32UEBR39MHT ( 2U.39 µh ± % EB e2) TJ31UEBR39MHT ( 1U.39 µh ± % EB e2) 1. 5 1. 5.8.8.6...6... 8 16 24 32 TJ32UEB1R2MHT ( 2U 1.2 µh ± % EB e2) 1.5 5. 6 12 18 24 36 TJ31UEB1R2MHT ( 1U 1.2 µh ± % EB e2) 2.5 5 1. 2..9.6. 1.5 1..5. 2 4 6 8 12 14 16 18 22 24 26 TJ32UEB1R5MHT ( 2U 1.5 µh ± % EB e2) 2.5 5. 5 15 25 TJ31UEB1R5MHT ( 1U 1.5 µh ± % EB e2) 2.5 5 2. 2. 1.5 1..5 1.5 1..5. 4 8 12 16 24. 5 15 25 Revision: 9-Mar-12 2 ocument Number: 34234 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

TJ32UEB4R7MHT ( 2U 4.7 µh ± % EB e2) TJ31UEB4R7MHT ( 1U 4.7 µh ± % EB e2) 5. 5 5. 5 4. 4. 3. 2. 1. 3. 2. 1.. 1 2 3 4 5 6 7 8 9 11 12 13 TJ32UEBMHT ( 2U µh ± % EB e2). 5. 3 6 9 12 15 TJ31UEBMHT ( 1U µh ± % EB e2). 5 16. 16. 12. 8. 4. 12. 8. 4.. 1 2 3 4 5 6 7 8 9 TJ32UEB15MHT ( 2U 15 µh ± % EB e2). 5. 1 2 3 4 5 6 7 8 9 TJ31UEB15MHT ( 1U 15 µh ± % EB e2). 5 16. 16. 12. 8. 4. 12. 8. 4.. 1 2 3 4 5 6 7 TJ32UEB2MHT ( 2U 22 µh ± % EB e2) 25. 5. 1 2 3 4 5 6 7 TJ31UEB2MHT ( 1U 22 µh ± % EB e2) 25. 5.. 15.. 5. 15.. 5.. 1 2 3 4 5 6. 1 2 3 4 5 6 Revision: 9-Mar-12 3 ocument Number: 34234 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

TJ32UEB39MHT ( 2U 39 µh ± % EB e2) TJ31UEB39MHT ( 1U 39 µh ± % EB e2) 5. 5 5. 5...........5 1. 1.5 2. 2.5 3. 3.5 4. TJ32UEB68MHT ( 2U 68 µh ± % EB e2). 5...5 1 1.5 2 2.5 3 3.5 4. TJ31UEB68MHT ( 1U 68 µh ± % EB e2). 5 8. 8. 6... 6......5 1. 1.5 2. 2.5 3. TJ32UEB1MHT ( 2U µh ± % EB e2) 125. 5...5 1 1.5 2 2.5 3. TJ31UEB1MHT ( 1U µh ± % EB e2) 125. 5.. 75. 5. 25. 75. 5. 25....5 1. 1.5 2. 2.5 3....5 1 1.5 2 2.5 3. Revision: 9-Mar-12 4 ocument Number: 34234 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

Legal isclaimer Notice Vishay isclaimer ALL PROUCT, PROUCT SPECIFICATIONS AN ATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR ESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 17 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVE Revision: 8-Feb-17 1 ocument Number: 9