NSVP249SDSF3. PIN Diode Dual series PIN Diode for VHF, UHF and AGC

Similar documents
FFH60UP60S, FFH60UP60S3. 60 A, 600 V Ultrafast Rectifier

Is Now Part of. To learn more about ON Semiconductor, please visit our website at

Schottky Barrier Diode Dual Series Schottky Barrier Diode for Mixer and Detector 5V, 30mA, 0.69pF, CP

FSV10120V. Ultra-Low VF Schottky Rectifier, 10 A, 120 V

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at

TIP42 / TIP42C PNP Epitaxial Silicon Transistor

UD0506T-TL-H. Planar Ultrafast Rectifier Low VF type, 5A, 600V, 1.3V, TP/TP-FA. Features. Specifications

FS8G - FS8M. 8 A Standard Recovery Surface Mount Rectifiers

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of. To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at

VHF variable capacitance diode

Is Now Part of To learn more about ON Semiconductor, please visit our website at

BAS70-00-V to BAS70-06-V

BAT54 series 1. Product profile 2. Pinning information Schottky barrier diodes 1.1 General description 1.2 Features and benefits

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Power dissipation comparable to SOT23 Package height typ mm AEC-Q101 qualified

Case Material: Molded Plastic. UL Flammability Classification Low Reverse Leakage Current

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T a = 25 ) Symbol. Note. V RM V R I FM I O P D I FSM T j T stg

SYMBOL TYPE NUMBER VALUE UNIT. Power dissipation at Tamb = 60 ºC 1.5 W. Non repetitive peak zener dissipation (t = 10ms) 40 W

50 V, 3 A PNP low VCEsat (BISS) transistor

Ultrafast epitaxial rectifier diode in a SOT226 (I2PAK) plastic package. Discontinuous Current Mode (DCM) Power Factor Correction (PFC)

PMBFJ111; PMBFJ112; PMBFJ113

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T a = 25 ) Symbol. Note. V RM V R I O I FSM T j T stg.

RN1441, RN1442, RN1443, RN1444

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK330

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2712

RN1441,RN1442,RN1443,RN1444

RN1421, RN1422, RN1423, RN1424 RN1425, RN1426, RN1427

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK mw

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5066. Characteristics Symbol Test Condition Min Typ. Max Unit

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086. Characteristics Symbol Test Condition Min Typ. Max Unit

RN1401, RN1402, RN1403 RN1404, RN1405, RN1406

OBSOLETE. Features. Mechanical Data PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR

ZXBM1017 OBSOLETE PART DISCONTINUED PART OBSOLETE - USE ZXBM1021 VARIABLE SPEED SINGLE- PHASE BLDC MOTOR CONTROLLER ZXBM of 10

Passivated, sensitive gate thyristors in a SOT54 plastic package. General purpose switching and phase control.

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941

DISCRETE SEMICONDUCTORS DATA SHEET. BYT79 series Rectifier diodes ultrafast

RN1114, RN1115, RN1116, RN1117, RN1118

DISCRETE SEMICONDUCTORS DATA SHEET. BYV29 series Rectifier diodes ultrafast

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1910, RN1911

V RSM = 30 V, I F(AV) = 2.0 A Schottky Diode. Description. Package. Features. Applications (1) (2) (1) Cathode (2) Anode

V RSM = 400 V, I F(AV) = 2.0 A General-Purpose Rectifier Diode. Description. Package. Features. Applications (1) (2) (1) Cathode (2) Anode

TB General description. 2. Features and benefits. 3. Applications. 4. Pinning information. 5. Ordering information

V RM = 600 V, I F(AV) = 1.0 A General-Purpose Rectifier Diode. Description. Package. Features. Applications

BLF7G20L-160P; BLF7G20LS-160P

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM07U7X

145 V PTC Thermistors For Overload Protection

TOSHIBA Transistor Silicon NPN Epitaxial Type TMBT3904

V RM = 600 V, I F(AV) = 0.5 A, t rr = 100 ns Fast Recovery Diode. Description. Package. Features. Applications

Low Profile, High Current IHLP Inductors

PHOTO DIODE NR6800 Series

DS9638 RS-422 Dual High Speed Differential Line Driver

RKZ7.5Z4MFAKT. Preliminary. Silicon Planar Zener Diode for Surge Absorption. Features. Ordering Information. Pin Arrangement.

DISCRETE SEMICONDUCTORS DATA SHEET

Low Profile, High Current IHLP Inductors

DISCRETE SEMICONDUCTORS DATA SHEET. BT134 series Triacs

Solid-Electrolyte TANTALEX Capacitors, Hermetically-Sealed, Axial-Lead

SAW FILTER FOR RKE Murata part number :SAFBC315MSP0T00

DCR DCR. Irms (A) Isat (A) Typ. Max. Recommended Layout NATURAL COOLING

SELECTABLE GTL VOLTAGE REFERENCE

Low Profile, High Current IHLP Inductors

RLB Series Radial Lead Inductors

K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET. Drop-In Replacement: CE3520K3. Part Number Order Number Package Quantity Marking Supplying Form

[Type text] PMP6007 TPS Vac Non Dimmable 10W LED Driver Reference Design

Silicon Schottky Barrier Diode for High Speed Switching

SN74F08 QUADRUPLE 2-INPUT POSITIVE-AND GATE

Low Profile, High Current IHLP Inductors

IHLP-2525CZ-8A 22 μh ± 20 % ER e3 MODEL INDUCTANCE VALUE INDUCTANCE TOLERANCE PACKAGE CODE JEDEC LEAD (Pb)-FREE STANDARD MODEL SIZE PACKAGE CODE

DUAL SCHOTTKY DIODE BRIDGE

Low Profile, High Current IHLP Inductors

PACKAGE OPTION ADDENDUM

To request a full data sheet, please send an to:

FrelTec. Switching Diode 0603

0.400 ± [ ± 0.127] [4.0] max ± [ ± 0.127]

0.400 ± [ ± 0.127] [4.0] max ± [ ± 0.127] [3.251]

Silicon Epitaxial Planar Diode for High Speed Switching

High Speed Optocoupler, 5 MBd

SOURCE CONTROL DRAWING OFFICIAL SPECIFICATION

SN54HCT08, SN74HCT08 QUADRUPLE 2-INPUT POSITIVE-AND GATES

AC Line Rated Ceramic Disc Capacitors Class X1, 400 V AC / Class Y4, 125 V AC


Cranking Simulator for Automotive Applications

The interface is designed to translate paging commands from a host computer to signals understood

SRF TYP. (MHz) ± [5.18 ± 0.254] [3.0] Max.

Low Profile, High Current IHLP Inductors


SERIES 2000 STICK ANTENNA

Low Profile, High Current IHLP Inductor

High Stability - High Temperature (230 C) Thin Film Wraparound Chip Resistors

For a detailed datasheet and other design support tools, please contact

AC Line Rated Ceramic Disc Capacitors Class X1, 760 V AC / Class Y1, 500 V AC

DC Power Adapter 120 VAC

FEATURES. IHLP-2525CZ μh ± 20 % ER e3 MODEL INDUCTANCE VALUE INDUCTANCE TOLERANCE PACKAGE CODE JEDEC LEAD (Pb)-FREE STANDARD

Recommended Land Pattern: [mm]

High Current Through Hole Inductor, High Temperature Series

Low Profile, High Current IHLP Inductors

SN54LS181, SN54S181 SN74LS181, SN74S181 ARITHMETIC LOGIC UNITS/FUNCTION GENERATORS

FEATURES APPLICATIONS. SRF TYP. (MHz) ± [5.18 ± 0.254] [2.0] Max.

Transcription:

NSVP49SDSF PIN Diode Dual series PIN Diode for VHF, UHF and AGC This PIN diode is designed to realize compact and efficient designs. Two PIN diodes are incorporated in one SC 0 package. The use of dual PIN diodes can reduce both system cost and board space. This PIN diode is AEC Q1 qualified and PPAP capable for automotive applications. Features Series connection of elements in a small size package Small Interterminal Capacitance (C = 0. pf typ) Small Forward Series Resistance (rs = 4. max) AEC Q1 qualified and PPAP capable Pb Free, Halogen Free and RoHS Compliance Typical Applications Auto Gain Control for Radio SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS at T A = C Symbol Parameter Value Unit V R Reverse Voltage 0 V I F Forward Current 0 ma P Allowable Power Dissipation 0 mw T J, T stg Operating Junction and Storage Temperature to +1 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1 www.onsemi.com ELECTRICAL CONECTION 0 V, 0 ma r s = 4. max PIN Diode MCP CASE 419 AJ 1 : Anode : Cathode : Cathode / Anode MARKING DIAGRAM ORDERING INFORMATION See detailed ordering and shipping information on page of this data sheet ELECTRICAL CHARACTERISTICS at T A = C (Note 1) Symbol Parameter Conditions Min Typ Max Unit V R Reverse Voltage I R = A 0 V I R Reverse Current V R = 0 V A V F Forward Voltage I F = 0 ma 0.9 V C Interterminal Capacitance V R = 0 V, f = 1 MHz 0. pf r s Series Resistance I F = ma, f = 0 MHz 4. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. The specifications shown above are for each individual diode. Semiconductor Components Industries, LLC, 018 February, 018 Rev. 0 1 Publication Order Number: NSVP49SDSF/D

NSVP49SDSF Forward Current, I F ma 1.0 T A = 1 C C C 0.01 0 0. 0.4 0.6 0.8 1.0 1. Forward Voltage, V F V Interterminal Capacitance, C pf T A = C f = 1 MHz 1.0 0 Reverse Voltage, V R V Figure 1. I F V F Figure. C V R T A = C T A = C 00 IF = A Reverse Current, I R na 1.0 0 C Series Resistance, r s 0 0 A 1 ma C ma 0 0 0 40 0 60 Reverse Voltage, V R V 0 0 00 Frequency, f MHz Figure. I R V R Figure 4. r s f www.onsemi.com

NSVP49SDSF 1k T A = C f = 0 MHz Resistance, r s 0 1.0 0.01 1.0 Forward Reverse, I F ma Figure. r s I F ORDERING INFORMATION Device Marking Package Shipping NSVP49SDSFT1G GV SC 0 / MCP (Pb Free / Halogen Free),000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com

MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC 0 / MCP CASE 419AJ ISSUE O DATE 0 NOV 011 DOCUMENT NUMBER: STATUS: NEW STANDARD: Semiconductor Components Industries, LLC, 00 October, 00 Rev. 0 DESCRIPTION: 98AON644E ON SEMICONDUCTOR STANDARD SC 0 / MCP http://onsemi.com 1 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped CONTROLLED COPY in red. Case Outline Number: PAGE 1 OF XXX

DOCUMENT NUMBER: 98AON644E PAGE OF ISSUE REVISION DATE O RELEASED FOR PRODUCTION FROM SANYO ENACT# TC 00000 TO ON 0 NOV 011 SEMICONDUCTOR. REQ. BY D. TRUHITTE. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Semiconductor Components Industries, LLC, 011 November, 011 Rev. O Case Outline Number: 419AJ

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 191 E. nd Pkwy, Aurora, Colorado 80011 USA Phone: 0 6 1 or 800 44 860 Toll Free USA/Canada Fax: 0 6 16 or 800 44 86 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800 8 98 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 41 90 9 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative