DISCRETE SEMICONDUCTORS DATA SHEET. BYV29 series Rectifier diodes ultrafast

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DISCREE SEMICONDUCORS DAA SHEE September 208

FEAURES SYMBOL QUICK REFERENCE DAA Low forward volt drop Fast switching Soft recovery characteristic High thermal cycling performance Low thermal resistance V R = 300 V/ 400 V/ 500 V V F.03 V I F(AV) = 9 A t rr 60 ns GENERAL DESCRIPION PINNING SOD59 (O220AC) Ultra-fast, epitaxial rectifier diodes PIN DESCRIPION intended for use as ouut rectifiers in high frequency switched mode power supplies. cathode 2 anode he is supplied in the conventional leaded SOD59 tab cathode (O220AC) package. K A 00aaa020 mb 2 O-220AC (SOD59) LIMIING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 34). SYMBOL PARAMEER CONDIIONS MIN. MAX. UNI BYV29-300 -400-500 V RRM Peak repetitive reverse voltage - 300 400 500 V V RWM Crest working reverse voltage - 300 400 500 V V R Continuous reverse voltage - 300 400 500 V I F(AV) Average forward current square wave; δ = 0.5; mb 23 C - 9 A I FRM Repetitive peak forward current t = 25 µs; δ = 0.5; - 8 A mb 23 C I FSM Non-repetitive peak forward t = ms - 0 A current. t = 8.3 ms sinusoidal; with reapplied - A V RRM(max) stg j Storage temperature Operating junction temperature -40 - C C HERMAL RESISANCES SYMBOL PARAMEER CONDIIONS MIN. YP. MAX. UNI R th j-mb hermal resistance junction to - - 2.5 K/W mounting base R th j-a hermal resistance junction to in free air. - 60 - K/W ambient Neglecting switching and reverse current losses. September 208 Rev.400

ELECRICAL CHARACERISICS j = 25 C unless otherwise stated SYMBOL PARAMEER CONDIIONS MIN. YP. MAX. UNI V F Forward voltage I F = 8 A; j = C - 0.90.03 V I F = 8 A -.05.25 V I F = 20 A -.20.40 V I R Reverse current V R = V RRM - 2.0 50 µa V R = V RRM ; j = 0 C - 0. 0.35 ma Q s Reverse recovery charge I F = 2 A to V R 30 V; - 40 60 nc di F /dt = 20 A/µs t rr Reverse recovery time I F = A to V R 30 V; - 50 60 ns di F /dt = 0 A/µs I rrm Peak reverse recovery current I F = A to V R 30 V; - 4.0 5.5 A di F /dt = 50 A/µs; j = 0 C V fr Forward recovery voltage I F = A; di F /dt = A/µs - 2.5 - V I F di F dt PF / W 5 Vo = 0.8900 V Rs 0.090 Ohms BYV29 mb(max) / C 2.5 D =.0 0.5 t rr 25 time 0. 0.2 Q s 0% % 5 I D = 37.5 I R I rrm Fig.. Definition of t rr, Q s and I rrm t 0 0 5 5 IF(AV) / A Fig.3. Maximum forward dissipation P F = f(i F(AV) ); square wave where I F(AV) =I F(RMS) x D. I F time PF / W 2 Vo = 0.89V Rs = 0.09 Ohms 8 6 4 2.8 BYV29 2.2.9 mb(max) / C 20 a =.57 25 30 35 V F 4 40 V fr 2 45 Fig.2. Definition of V fr V F time 0 0 2 4 6 8 IF(AV) / A Fig.4. Maximum forward dissipation P F = f(i F(AV) ); sinusoidal current waveform where a = form factor = I F(RMS) / I F(AV). September 208 2 Rev.400

00 trr / ns IF= A 30 IF / A j= C j=25 C BYW29 0 A 20 typ max j = 25 C j = 0C 0 dif/dt (A/us) Fig.5. Maximum t rr at j = 25 C and 0 C 0 0 0.5.5 2 VF / V Fig.7. ypical and maximum forward characteristic I F = f(v F ); parameter j Irrm / A 00 Qs / nc IF=A 0 IF = A IF=A 0. 2 A 0.0 j = 25 C j = 0C 0 -dif/dt (A/us) Fig.6. Maximum I rrm at j = 25 C and 0 C..0 0 -dif/dt (A/us) Fig.8. Maximum Q s at j = 25 C ransient thermal impedance, Zth j-mb (K/W) 0. 0.0 P D D = t 0.00 us us 0us ms ms 0ms s s pulse width, (s) BYV29 Fig.9. ransient thermal impedance Z th j-mb = f(t p ) September 208 3 Rev.400

MECHANICAL DAA September 208 4 Rev.400

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